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| 臺大學術典藏 |
2018-09-10T08:42:51Z |
Influence of defects and interface on radiative transition of Ge
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Jan, S.-R.;Chen, C.-Y.;Lee, C.-H.;Chan, S.-T.;Peng, K.-L.;Liu, C.W.;Yamamoto, Y.;Tillack, B.; Jan, S.-R.; Chen, C.-Y.; Lee, C.-H.; Chan, S.-T.; Peng, K.-L.; Liu, C.W.; Yamamoto, Y.; Tillack, B.; CHEE-WEE LIU |
| 國立交通大學 |
2018-08-21T05:53:00Z |
260-GHz differential amplifier in SiGe heterojunction bipolar transistor technology
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Yoon, D.; Seo, M. -G.; Song, K.; Kaynak, M.; Tillack, B.; Rieh, J. -S. |
| 國立交通大學 |
2014-12-08T15:20:42Z |
Effect of graded-temperature arsenic prelayer on quality of GaAs on Ge/Si substrates by metalorganic vapor phase epitaxy
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Yu, H. W.; Chang, E. Y.; Yamamoto, Y.; Tillack, B.; Wang, W. C.; Kuo, C. I.; Wong, Y. Y.; Nguyen, H. Q. |
| 臺大學術典藏 |
2012 |
Direct and indirect radiative recombination from Ge
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Liu, C.W.; Cheng, T.-H.; Chen, Y.-Y.; Jan, S.-R.; Chen, C.-Y.; Chan, S.T.; Nien, Y.-H.; Yamamoto, Y.; Tillack, B.; CHEE-WEE LIU |
Showing items 1-4 of 4 (1 Page(s) Totally)
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