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| 國立交通大學 |
2019-04-02T06:04:34Z |
Experimental and modeling on atomic layer deposition Al2O3/n-InAs metal-oxide-semiconductor capacitors with various surface treatments
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Trinh, H. D.; Chang, E. Y.; Brammertz, G.; Lu, C. Y.; Nguyen, H. Q.; Tran, B. T. |
| 國立交通大學 |
2019-04-02T05:58:46Z |
Electrical Characterization of Al2O3/n-InAs Metal-Oxide-Semiconductor Capacitors With Various Surface Treatments
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Trinh, H. D.; Brammertz, G.; Chang, E. Y.; Kuo, C. I.; Lu, C. Y.; Lin, Y. C.; Nguyen, H. Q.; Wong, Y. Y.; Tran, B. T.; Kakushima, K.; Iwai, H. |
| 國立交通大學 |
2019-04-02T05:57:57Z |
The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitor
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Trinh, H. D.; Chang, E. Y.; Wu, P. W.; Wong, Y. Y.; Chang, C. T.; Hsieh, Y. F.; Yu, C. C.; Nguyen, H. Q.; Lin, Y. C.; Lin, K. L.; Hudait, M. K. |
| 臺大學術典藏 |
2018-09-10T08:42:51Z |
High quality Ge thin film grown by ultrahigh vacuum chemical vapor deposition on GaAs substrate
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Tang, S.-H.;Chang, E.Y.;Hudait, M.;Maa, J.-S.;Liu, C.-W.;Luo, G.-L.;Trinh, H.-D.;Su, Y.-H.; Tang, S.-H.; Chang, E.Y.; Hudait, M.; Maa, J.-S.; Liu, C.-W.; Luo, G.-L.; Trinh, H.-D.; Su, Y.-H.; CHEE-WEE LIU |
| 國立交通大學 |
2014-12-08T15:48:19Z |
Normally-off operation AlGaN/GaN MOS-HEMT with high threshold voltage
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Chang, C. -T.; Hsu, T. -H.; Chang, E. Y.; Chen, Y. -C.; Trinh, H. -D.; Chen, K. J. |
| 國立交通大學 |
2014-12-08T15:33:42Z |
Electrical Characterization of Al(2)O(3)/n-InAs Metal-Oxide-Semiconductor Capacitors With Various Surface Treatments
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Trinh, H. D.; Brammertz, G.; Chang, E. Y.; Kuo, C. I.; Lu, C. Y.; Lin, Y. C.; Nguyen, H. Q.; Wong, Y. Y.; Tran, B. T.; Kakushima, K.; Iwai, H. |
| 國立交通大學 |
2014-12-08T15:30:30Z |
In0.5Ga0.5As-Based Metal-Oxide-Semiconductor Capacitor on GaAs Substrate Using Metal-Organic Chemical Vapor Deposition
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Nguyen, H. Q.; Trinh, H. D.; Chang, E. Y.; Lee, C. T.; Wang, Shin Yuan; Yu, H. W.; Hsu, C. H.; Nguyen, C. L. |
| 國立交通大學 |
2014-12-08T15:21:44Z |
Experimental and modeling on atomic layer deposition Al2O3/n-InAs metal-oxide-semiconductor capacitors with various surface treatments
|
Trinh, H. D.; Chang, E. Y.; Brammertz, G.; Lu, C. Y.; Nguyen, H. Q.; Tran, B. T. |
| 國立交通大學 |
2014-12-08T15:06:33Z |
The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al(2)O(3)/n-In(0.53)Ga(0.47)As metal-oxide-semiconductor capacitor
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Trinh, H. D.; Chang, E. Y.; Wu, P. W.; Wong, Y. Y.; Chang, C. T.; Hsieh, Y. F.; Yu, C. C.; Nguyen, H. Q.; Lin, Y. C.; Lin, K. L.; Hudait, M. K. |
| 國立成功大學 |
2013-01 |
In0.5Ga0.5As-Based Metal-Oxide-Semiconductor Capacitor on GaAs Substrate Using Metal-Organic Chemical Vapor Deposition
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Nguyen, H. Q.; Trinh, H. D.; Chang, E. Y.; Lee, C. T.; Wang, Shin Yuan; Yu, H. W.; Hsu, C. H.; Nguyen, C. L. |
Showing items 1-10 of 10 (1 Page(s) Totally)
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