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机构 日期 题名 作者
國立交通大學 2019-04-02T06:04:22Z InAs-Channel Metal-Oxide-Semiconductor HEMTs with Atomic-Layer-Deposited Al2O3 Gate Dielectric Chang, Chia-Yuan; Chang, Edward Yi; Huang, Wei-Ching; Su, Yung-Hsuan; Trinh, Hai-Dang; Hsu, Heng-Tung; Miyamoto, Yasuyuki
國立交通大學 2019-04-02T05:59:42Z Effects of Wet Chemical and Trimethyl Aluminum Treatments on the Interface Properties in Atomic Layer Deposition of Al2O3 on InAs Trinh, Hai-Dang; Chang, Edward Yi; Wong, Yuen-Yee; Yu, Chih-Chieh; Chang, Chia-Yuan; Lin, Yueh-Chin; Nguyen, Hong-Quan; Tran, Binh-Tinh
國立交通大學 2019-04-02T05:58:44Z InAs-Channel Metal-Oxide-Semiconductor HEMTs with Atomic-Layer-Deposited Al2O3 Gate Dielectric Chang, Chia-Yuan; Hsu, Heng-Tung; Chang, Edward Yi; Trinh, Hai-Dang; Miyamoto, Yasuyuki
國立交通大學 2017-04-21T06:55:48Z Effective surface treatment for GaN metal-insulator-semiconductor high-electron-mobility transistors using HF plus N-2 plasma prior to SiN passivation Liu, Shih-Chien; Trinh, Hai-Dang; Dai, Gu-Ming; Huang, Chung-Kai; Dee, Chang-Fu; Majlis, Burhanuddin Yeop; Biswas, Dhrubes; Chang, Edward Yi
國立交通大學 2017-04-21T06:49:42Z In-x Ga1-x As Materials for Post CMOS Application: Materials and Device Aspects Chang, Edward Yi; Lin, Yueh-Chin; Luc, Quang-Ho; Trinh, Hai-Dang; Yao, Jing-Neng; Chang, Po-Chun
國立交通大學 2016-03-28T00:04:26Z Effective surface treatment for GaN metal-insulator-semiconductor high-electron-mobility transistors using HF plus N-2 plasma prior to SiN passivation Liu, Shih-Chien; Trinh, Hai-Dang; Dai, Gu-Ming; Huang, Chung-Kai; Dee, Chang-Fu; Majlis, Burhanuddin Yeop; Biswas, Dhrubes; Chang, Edward Yi
國立交通大學 2014-12-16T06:14:58Z SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Chang Edward Yi.; Lin Yueh-Chin; Chang Chia-Hua; Trinh Hai-Dang
國立交通大學 2014-12-08T15:47:56Z Effects of Wet Chemical and Trimethyl Aluminum Treatments on the Interface Properties in Atomic Layer Deposition of Al(2)O(3) on InAs Trinh, Hai-Dang; Chang, Edward Yi; Wong, Yuen-Yee; Yu, Chih-Chieh; Chang, Chia-Yuan; Lin, Yueh-Chin; Nguyen, Hong-Quan; Tran, Binh-Tinh
國立交通大學 2014-12-08T15:36:45Z Impact of Q-Time on the Passivation of Al2O3/p-In0.53Ga0.47As Interfaces Using Various Surface Treatments Luc, Quang-Ho; Chang, Edward Yi; Trinh, Hai-Dang; Wong, Yuen-Yee; Do, Huy-Binh; Lin, Yueh-Chin; Wang, Sheng-Ping; Yang, Min-Chieh; Wu, Hsing-Chen; Chen, Ke-Hung; Liao, Yi-Hsien; Tu, Sheng-Hung
國立交通大學 2014-12-08T15:36:25Z Effect of annealing processes on the electrical properties of the atomic layer deposition Al2O3/In0.53Ga0.47As metal oxide semiconductor capacitors Quang-Ho Luc; Chang, Edward Yi; Trinh, Hai-Dang; Hong-Quan Nguyen; Binh-Tinh Tran; Lin, Yueh-Chin

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