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机构 日期 题名 作者
國立交通大學 2019-04-02T06:04:22Z InAs-Channel Metal-Oxide-Semiconductor HEMTs with Atomic-Layer-Deposited Al2O3 Gate Dielectric Chang, Chia-Yuan; Chang, Edward Yi; Huang, Wei-Ching; Su, Yung-Hsuan; Trinh, Hai-Dang; Hsu, Heng-Tung; Miyamoto, Yasuyuki
國立交通大學 2019-04-02T05:59:42Z Effects of Wet Chemical and Trimethyl Aluminum Treatments on the Interface Properties in Atomic Layer Deposition of Al2O3 on InAs Trinh, Hai-Dang; Chang, Edward Yi; Wong, Yuen-Yee; Yu, Chih-Chieh; Chang, Chia-Yuan; Lin, Yueh-Chin; Nguyen, Hong-Quan; Tran, Binh-Tinh
國立交通大學 2019-04-02T05:58:44Z InAs-Channel Metal-Oxide-Semiconductor HEMTs with Atomic-Layer-Deposited Al2O3 Gate Dielectric Chang, Chia-Yuan; Hsu, Heng-Tung; Chang, Edward Yi; Trinh, Hai-Dang; Miyamoto, Yasuyuki
國立交通大學 2017-04-21T06:55:48Z Effective surface treatment for GaN metal-insulator-semiconductor high-electron-mobility transistors using HF plus N-2 plasma prior to SiN passivation Liu, Shih-Chien; Trinh, Hai-Dang; Dai, Gu-Ming; Huang, Chung-Kai; Dee, Chang-Fu; Majlis, Burhanuddin Yeop; Biswas, Dhrubes; Chang, Edward Yi
國立交通大學 2017-04-21T06:49:42Z In-x Ga1-x As Materials for Post CMOS Application: Materials and Device Aspects Chang, Edward Yi; Lin, Yueh-Chin; Luc, Quang-Ho; Trinh, Hai-Dang; Yao, Jing-Neng; Chang, Po-Chun
國立交通大學 2016-03-28T00:04:26Z Effective surface treatment for GaN metal-insulator-semiconductor high-electron-mobility transistors using HF plus N-2 plasma prior to SiN passivation Liu, Shih-Chien; Trinh, Hai-Dang; Dai, Gu-Ming; Huang, Chung-Kai; Dee, Chang-Fu; Majlis, Burhanuddin Yeop; Biswas, Dhrubes; Chang, Edward Yi
國立交通大學 2014-12-16T06:14:58Z SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Chang Edward Yi.; Lin Yueh-Chin; Chang Chia-Hua; Trinh Hai-Dang
國立交通大學 2014-12-08T15:47:56Z Effects of Wet Chemical and Trimethyl Aluminum Treatments on the Interface Properties in Atomic Layer Deposition of Al(2)O(3) on InAs Trinh, Hai-Dang; Chang, Edward Yi; Wong, Yuen-Yee; Yu, Chih-Chieh; Chang, Chia-Yuan; Lin, Yueh-Chin; Nguyen, Hong-Quan; Tran, Binh-Tinh
國立交通大學 2014-12-08T15:36:45Z Impact of Q-Time on the Passivation of Al2O3/p-In0.53Ga0.47As Interfaces Using Various Surface Treatments Luc, Quang-Ho; Chang, Edward Yi; Trinh, Hai-Dang; Wong, Yuen-Yee; Do, Huy-Binh; Lin, Yueh-Chin; Wang, Sheng-Ping; Yang, Min-Chieh; Wu, Hsing-Chen; Chen, Ke-Hung; Liao, Yi-Hsien; Tu, Sheng-Hung
國立交通大學 2014-12-08T15:36:25Z Effect of annealing processes on the electrical properties of the atomic layer deposition Al2O3/In0.53Ga0.47As metal oxide semiconductor capacitors Quang-Ho Luc; Chang, Edward Yi; Trinh, Hai-Dang; Hong-Quan Nguyen; Binh-Tinh Tran; Lin, Yueh-Chin
國立交通大學 2014-12-08T15:33:16Z High k/III-V Structures: Interfaces, Oxides Quality and Down Scaling Trinh, Hai-Dang; Chang, Edward Yi
國立交通大學 2014-12-08T15:32:15Z Electrical Characterization and Materials Stability Analysis of La2O3/HfO2 Composite Oxides on n-In0.53Ga0.47As MOS Capacitors With Different Annealing Temperatures Lin, Yueh Chin; Trinh, Hai Dang; Chuang, Ting Wei; Iwai, Hiroshi; Kakushima, Kuniyuki; Ahmet, Parhat; Lin, Chun Hsiung; Diaz, Carlos H.; Chang, Hui Chen; Jang, Simon M.; Chang, Edward Yi
國立交通大學 2014-12-08T15:31:04Z Investigation of Characteristics of Al2O3/n-In (x) Ga1-x As (x=0.53, 0.7, and 1) Metal-Oxide-Semiconductor Structures Trinh, Hai-Dang; Lin, Yueh-Chin; Kuo, Chien-I; Chang, Edward Yi; Hong-Quan Nguyen; Wong, Yuen-Yee; Yu, Chih-Chieh; Chen, Chi-Ming; Chang, Chia-Yuan; Wu, Jyun-Yi; Chiu, Han-Chin; Yu, Terrence; Chang, Hui-Cheng; Tsai, Joseph; Hwang, David
國立交通大學 2014-12-08T15:30:25Z Ge epitaxial films on GaAs (100), (110), and (111) substrates for applications of CMOS heterostructural integrations Tang, Shih-Hsuan; Kuo, Chien-I; Trinh, Hai-Dang; Chang, Edward Yi; Nguyen, Hong-Quan; Nguyen, Chi-Lang; Luo, Guang-Li
國立交通大學 2014-12-08T15:23:33Z Fabrication and characterization of n-In0.4Ga0.6N/p-Si solar cell Tran, Binh-Tinh; Chang, Edward-Yi; Trinh, Hai-Dang; Lee, Ching-Ting; Sahoo, Kartika Chandra; Lin, Kung-Liang; Huang, Man-Chi; Yu, Hung-Wei; Luong, Tien-Tung; Chung, Chen-Chen; Nguyen, Chi-Lang
國立交通大學 2014-12-08T15:23:27Z Effect of Nitridation on the Regrowth Interface of AlGaN/GaN Structures Grown by Molecular Beam Epitaxy on GaN Templates Wong, Yuen-Yee; Huang, Wei-Ching; Trinh, Hai-Dang; Yang, Tsung-Hsi; Chang, Jet-Rung; Chen, Micheal; Chang, Edward Yi
國立交通大學 2014-12-08T15:22:04Z Effect of Postdeposition Annealing Temperatures on Electrical Characteristics of Molecular-Beam-Deposited HfO2 on n-InAs/InGaAs Metal-Oxide-Semiconductor Capacitors Trinh, Hai-Dang; Lin, Yueh-Chin; Wang, Huan-Chung; Chang, Chia-Hua; Kakushima, Kuniyuki; Iwai, Hiroshi; Kawanago, Takamasa; Lin, Yan-Gu; Chen, Chi-Ming; Wong, Yuen-Yee; Huang, Guan-Ning; Hudait, Mantu; Chang, Edward Yi
國立交通大學 2014-12-08T15:11:44Z High quality Ge thin film grown by ultrahigh vacuum chemical vapor deposition on GaAs substrate Tang, Shih-Hsuan; Chang, Edward Yi; Hudait, Mantu; Maa, Jer-Shen; Liu, Chee-Wee; Luo, Guang-Li; Trinh, Hai-Dang; Su, Yung-Hsuan
國立交通大學 2014-12-08T15:10:28Z InAs-Channel Metal-Oxide-Semiconductor HEMTs with Atomic-Layer-Deposited Al(2)O(3) Gate Dielectric Chang, Chia-Yuan; Hsu, Heng-Tung; Chang, Edward Yi; Trinh, Hai-Dang; Miyamoto, Yasuyuki
國立成功大學 2012-07 Fabrication and characterization of n-In0.4Ga0.6N/p-Si solar cell Tran, Binh-Tinh; Chang, Edward-Yi; Trinh, Hai-Dang; Lee, Ching-Ting; Sahoo, Kartika Chandra; Lin, Kung-Liang; Huang, Man-Chi; Yu, Hung-Wei; Luong, Tien-Tung; Chung, Chen-Chen; Nguyen, Chi-Lang

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