臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

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Institution	Date	Title	Author
臺大學術典藏	2022-04-25T06:41:30Z	Highly Stacked GeSi Nanosheets and Nanowires by Lowerature Epitaxy and Wet Etching	Liu Y.-C;Tu C.-T;Tsai C.-E;Huang B.-W;Cheng C.-Y;Chueh S.-J;Chen J.-Y;Liu C.W.; Liu Y.-C; Tu C.-T; Tsai C.-E; Huang B.-W; Cheng C.-Y; Chueh S.-J; Chen J.-Y; Liu C.W.; CHEE-WEE LIU
臺大學術典藏	2021-09-02T00:04:01Z	Uniform 4-Stacked Ge0.9Sn0.1Nanosheets Using Double Ge0.95Sn0.05Caps by Highly Selective Isotropic Dry Etch	Tu C.-T;Huang Y.-S;Cheng C.-Y;Tsai C.-E;Chen J.-Y;Ye H.-Y;Lu F.-L;Liu C.W.; Tu C.-T; Huang Y.-S; Cheng C.-Y; Tsai C.-E; Chen J.-Y; Ye H.-Y; Lu F.-L; Liu C.W.; CHEE-WEE LIU
臺大學術典藏	2021-09-02T00:04:00Z	Record Low Contact Resistivity to Ge:B (8.110-10Omega-cm-2) and GeSn:B (4.110-10Omega-cm-2) with Optimized [B] and [Sn] by In-situ CVD Doping	Lu F.-L;Liu Y.-C;Tsai C.-E;Ye H.-Y;Liu C.W.; Lu F.-L; Liu Y.-C; Tsai C.-E; Ye H.-Y; Liu C.W.; CHEE-WEE LIU
臺大學術典藏	2021-09-02T00:03:59Z	Process simulation of pulsed laser annealing on epitaxial Ge on Si	Lu C.-T;Lu F.-L;Tsai C.-E;Huang W.-H;Liu C.W.; Lu C.-T; Lu F.-L; Tsai C.-E; Huang W.-H; Liu C.W.; CHEE-WEE LIU
臺大學術典藏	2021-09-02T00:03:54Z	First Stacked Ge0.88Sn0.12 pGAAFETs with Cap, LG=4Onm, Compressive Strain of 3.3%, and High S/D Doping by CVD Epitaxy Featuring Record ION of 58μA at VOV=VDS= -0.5V, Record Gm,max of 172μS at VDS= -0.5V, and Low Noise	Huang Y.-S;Tsai C.-E;Tu C.-T;Ye H.-Y;Liu Y.-C;Lu F.-L;Liu C.W.; Huang Y.-S; Tsai C.-E; Tu C.-T; Ye H.-Y; Liu Y.-C; Lu F.-L; Liu C.W.; CHEE-WEE LIU
臺大學術典藏	2021-09-02T00:03:54Z	First vertically stacked GeSn nanowire pGAAFETs with Ion = 1850μA/μm (VOV = VDS = -1V) on Si by GeSn/Ge CVD epitaxial growth and optimum selective etching	Huang Y.-S;Lu F.-L;Tsou Y.-J;Tsai C.-E;Lin C.-Y;Huang C.-H;Liu C.W.; Huang Y.-S; Lu F.-L; Tsou Y.-J; Tsai C.-E; Lin C.-Y; Huang C.-H; Liu C.W.; CHEE-WEE LIU
臺大學術典藏	2021-09-02T00:03:53Z	First Demonstration of 4-Stacked Ge0.915Sn0.085 Wide Nanosheets by Highly Selective Isotropic Dry Etching with High S/D Doping and Undoned Channels	Huang Y.-S;Lu F.-L;Tu C.-T;Chen J.-Y;Tsai C.-E;Ye H.-Y;Liu Y.-C;Liu C.; Huang Y.-S; Lu F.-L; Tu C.-T; Chen J.-Y; Tsai C.-E; Ye H.-Y; Liu Y.-C; Liu C.; CHEE-WEE LIU
臺大學術典藏	2021-09-02T00:03:53Z	First demonstration of uniform 4-Stacked Ge0.9Sn0.1nanosheets with record ION =73μA at VOV=VDS= -0.5V and low noise using double Ge0.95Sn0.05caps, dry etch, low channel doping, and high S/D doping	Huang Y.-S;Tsai C.-E;Tu C.-T;Chen J.-Y;Ye H.-Y;Lu F.-L;Liu C.W.; Huang Y.-S; Tsai C.-E; Tu C.-T; Chen J.-Y; Ye H.-Y; Lu F.-L; Liu C.W.; CHEE-WEE LIU
臺大學術典藏	2021-09-02T00:03:51Z	Dopant Recovery in Epitaxial Ge on SOI by Laser Annealing with Device Applications	Lu F.-L;Tsai C.-E;Wong I.-H;Lu C.-T;Liu C.W.; Lu F.-L; Tsai C.-E; Wong I.-H; Lu C.-T; Liu C.W.; CHEE-WEE LIU
臺大學術典藏	2021-09-02T00:03:50Z	Boron-doping induced Sn loss in GeSn alloys grown by chemical vapor deposition	Tsai C.-E;Lu F.-L;Chen P.-S;Liu C.W.; Tsai C.-E; Lu F.-L; Chen P.-S; Liu C.W.; CHEE-WEE LIU

Showing items 1-10 of 53 (6 Page(s) Totally)
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