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"tsai cw"的相關文件
顯示項目 11-20 / 39 (共4頁)
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| 國立交通大學 |
2014-12-08T15:46:18Z |
Transient effects of positive oxide charge on stress-induced leakage current in tunnel oxides
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Zous, NK; Wang, TH; Yeh, CC; Tsai, CW; Huang, CM |
| 國立交通大學 |
2014-12-08T15:41:09Z |
Substrate bias dependence of breakdown progression in ultrathin oxide pMOSFETs
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Tsai, CW; Chen, MC; Gu, SH; Wang, T |
| 國立交通大學 |
2014-12-08T15:41:07Z |
Auger recombination-enhanced hot carrier degradation in nMOSFETs with a forward substrate bias
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Tsai, CW; Chen, MC; Ku, SH; Wang, TH |
| 國立交通大學 |
2014-12-08T15:27:09Z |
A comparative study of SILC transient characteristics and mechanisms in FN stressed and hot hole stressed tunnel oxides
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Zous, NK; Wang, TH; Yeh, CC; Tsai, CW; Huang, CM |
| 國立交通大學 |
2014-12-08T15:27:03Z |
Auger recombination enhanced hot carrier degradation in nMOSFETs with positive substrate bias
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Chiang, LP; Tsai, CW; Wang, T; Liu, UC; Wang, MC; Hsia, LC |
| 國立交通大學 |
2014-12-08T15:26:57Z |
Valence-band tunneling enhanced hot carrier degradation in ultra-thin oxide nMOSFETs
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Tsai, CW; Gu, SH; Chiang, LP; Wang, TH; Liu, YC; Huang, LS; Wang, MC; Hsia, LC |
| 國立交通大學 |
2014-12-08T15:26:38Z |
Soft breakdown enhanced hysteresis effects in ultra-thin oxide SOI nMOSFETs
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Chen, MC; Tsai, CW; Gu, SH; Wang, TH |
| 國立交通大學 |
2014-12-08T15:26:23Z |
Negative substrate bias enhanced breakdown hardness in ultra-thin oxide pMOSFETs
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Wang, TH; Tsai, CW; Chen, MC; Chan, CT; Chiang, HK; Lu, SH; Hu, HC; Chen, TF; Yang, CK; Lee, MT; Wu, DY; Chen, JK; Chien, SC; Sun, SW |
| 國立交通大學 |
2014-12-08T15:25:22Z |
Single-electron emission of traps in HfSiON as high-k gate dielectric for MOSFETs
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Chan, CT; Tang, CJ; Kuo, CH; Ma, HC; Tsai, CW; Wang, HCH; Chi, MH; Wang, T |
| 國立交通大學 |
2014-12-08T15:18:55Z |
Mechanism for slow switching effect in advanced low-voltage, high-speed Pb(Zr1-XTiX)O-3 ferroelectric memory
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Tsai, CW; Lai, SC; Yen, CT; Lien, HM; Lung, HL; Wu, TB; Wang, TH; Liu, R; Lu, CY |
顯示項目 11-20 / 39 (共4頁)
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