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Showing items 26-35 of 49 (5 Page(s) Totally)
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| 國立成功大學 |
2003-11 |
In0.23Ga0.77N/GaN MQW LEDs with a low temperature GaN cap layer
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Wu, Long; Chang, Shoou-Jinn; Su, Yan-Kuin; Chuang, Ricky Wen-kuei; Hsu, Y. P.; Kuo, Chih-Hung; Lai, W. C.; Wen, Ten-Chin; Tsai, J. M.; Sheu, Jinn-Kong |
| 國立成功大學 |
2003-11 |
Nitride-based blue LEDs with GaN/SiN double buffer layers
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Kuo, Chih-Hung; Chang, Shoou-Jinn; Su, Yan-Kuin; Wang, C. K.; Wu, Long; Sheu, Jinn-Kong; Wen, Ten-Chin; Lai, W. C.; Tsai, J. M.; Lin, C. C. |
| 國立成功大學 |
2003-11 |
High brightness InGaN green LEDs with an ITO on n(++)-SPS upper contact
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Chang, C. S.; Chang, Shoou-Jinn; Su, Yan-Kuin; Chih, Hungih-Hung; Lai, W. C.; Lin, Y. C.; Hsu, Y. P.; Shei, Shih-Chang; Tsai, J. M.; Lo, H. M.; Ke, J. C.; Shen, J. K. |
| 國立成功大學 |
2003-08-01 |
Characterization of GaN Schottky barrier photodetectors with a low-temperature GaN cap layer
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Lee, M. L.; Sheu, Jinn-Kong; Lai, W. C.; Su, Yan-Kuin; Chang, Shoou-Jinn; Kao, C. J.; Tun, Chun-Ju; Chen, M. G.; Chang, W. H.; Chi, Gou-Chung; Tsai, J. M. |
| 國立成功大學 |
2003-08-01 |
Characterization of GaN Schottky barrier photodetectors with a low-temperature GaN cap layer
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Lee, M. L.; Sheu, Jinn-Kong; Lai, W. C.; Chang, Shoou-Jinn; Su, Yan-Kuin; Chen, M. G.; Kao, C. J.; Chi, Gou-Chung; Tsai, J. M. |
| 國立成功大學 |
2003-08 |
Nitride-based green light-emitting diodes with high temperature GaN barrier layers
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Wu, Long; Chang, Shoou-Jinn; Su, Yan-Kuin; Chuang, Ricky Wen-kuei; Wen, Ten-Chin; Kuo, Chih-Hung; Lai, W. C.; Chang, C. S.; Tsai, J. M.; Sheu, Jinn-Kong |
| 國立成功大學 |
2003-05 |
InGaN/GaN LEDs with a Si-doped InGaN/GaN short-period superlattice tunneling contact layer
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Wu, L. W.; Chang, Shoou-Jinn; Su, Yan-Kuin; Tsai, T. Y.; Wen, Ten-Chin; Kuo, C. H.; Lai, W. C.; Sheu, Jinn-Kong; Tsai, J. M.; Chen, S. C.; Huang, B. R. |
| 國立成功大學 |
2003-04-28 |
GaN Schottky barrier photodetectors with a low-temperature GaN cap layer
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Lee, M. L.; Sheu, J. K.; Lai, W. C.; Chang, Shoou-Jinn; Su, Yan-Kuin; Chen, M. G.; Kao, C. J.; Chi, Gou-Chung; Tsai, J. M. |
| 國立成功大學 |
2003-03 |
Improved ESD protection by combining InGaN-GaN MQW LEDs with GaN Schottky diodes
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Chang, Shoou-Jinn; Chen, C. H.; Su, Yan-Kuin; Sheu, Jinn-Kong; Lai, W. C.; Tsai, J. M.; Liu, C. H.; Chen, S. C. |
| 國立成功大學 |
2003-02 |
Si and Zn co-doped InGaN-GaN white light-emitting diodes
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Chang, Shoou-Jinn; Wu, L. W.; Su, Yan-Kuin; Kuo, C. H.; Lai, W. C.; Hsu, Y. P.; Sheu, Jinn-Kong; Chen, S. F.; Tsai, J. M. |
Showing items 26-35 of 49 (5 Page(s) Totally)
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