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Showing items 21-45 of 49 (2 Page(s) Totally) 1 2 > >> View [10|25|50] records per page
東方設計學院 |
2006 |
知識創新擴散模式之研究
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蔡志明; Tsai, Jr-Ming; Tsai, J. M.; (行政院國家科學委員會); (東方技術學院行銷與流通管理系) |
國立成功大學 |
2005-10 |
Nitride-based light-emitting diodes with p-AlInGaN surface layers
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Kuo, Chih-Hung; Lin, C. C.; Chang, Shoou-Jinn; Hsu, Y. P.; Tsai, J. M.; Lai, W. C.; Wang, P. T. |
國立成功大學 |
2005-08 |
InGaN-GaN MQW LEDs with Si treatment
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Hsu, Y. P.; Chang, Shoou-Jinn; Su, Yan-Kuin; Chen, S. C.; Tsai, J. M.; Lai, W. C.; Kuo, Chih-Hung; Chang, C. S. |
國立成功大學 |
2004-08-25 |
InGaN/GaN MQW blue LEDs with GaN/SiN double buffer layers
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Liu, C. H.; Chuang, R. W.; Chang, Shoou-Jinn; Su, Yan-Kuin; Kuo, C. H.; Tsai, J. M.; Lin, C. C. |
國立成功大學 |
2004-01-15 |
Nitride-based near-ultraviolet LEDs with an ITO transparent contact
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Kuo, C. H.; Chang, Shoou-Jinn; Su, Yan-Kuin; Chuang, R. W.; Chang, C. S.; Wu, L. W.; Lai, W. C; Chen, Jenn-Fang; Sheu, J.; Lo, H. M.; Tsai, J. M. |
國立成功大學 |
2003-11 |
In0.23Ga0.77N/GaN MQW LEDs with a low temperature GaN cap layer
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Wu, Long; Chang, Shoou-Jinn; Su, Yan-Kuin; Chuang, Ricky Wen-kuei; Hsu, Y. P.; Kuo, Chih-Hung; Lai, W. C.; Wen, Ten-Chin; Tsai, J. M.; Sheu, Jinn-Kong |
國立成功大學 |
2003-11 |
Nitride-based blue LEDs with GaN/SiN double buffer layers
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Kuo, Chih-Hung; Chang, Shoou-Jinn; Su, Yan-Kuin; Wang, C. K.; Wu, Long; Sheu, Jinn-Kong; Wen, Ten-Chin; Lai, W. C.; Tsai, J. M.; Lin, C. C. |
國立成功大學 |
2003-11 |
High brightness InGaN green LEDs with an ITO on n(++)-SPS upper contact
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Chang, C. S.; Chang, Shoou-Jinn; Su, Yan-Kuin; Chih, Hungih-Hung; Lai, W. C.; Lin, Y. C.; Hsu, Y. P.; Shei, Shih-Chang; Tsai, J. M.; Lo, H. M.; Ke, J. C.; Shen, J. K. |
國立成功大學 |
2003-08-01 |
Characterization of GaN Schottky barrier photodetectors with a low-temperature GaN cap layer
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Lee, M. L.; Sheu, Jinn-Kong; Lai, W. C.; Su, Yan-Kuin; Chang, Shoou-Jinn; Kao, C. J.; Tun, Chun-Ju; Chen, M. G.; Chang, W. H.; Chi, Gou-Chung; Tsai, J. M. |
國立成功大學 |
2003-08-01 |
Characterization of GaN Schottky barrier photodetectors with a low-temperature GaN cap layer
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Lee, M. L.; Sheu, Jinn-Kong; Lai, W. C.; Chang, Shoou-Jinn; Su, Yan-Kuin; Chen, M. G.; Kao, C. J.; Chi, Gou-Chung; Tsai, J. M. |
國立成功大學 |
2003-08 |
Nitride-based green light-emitting diodes with high temperature GaN barrier layers
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Wu, Long; Chang, Shoou-Jinn; Su, Yan-Kuin; Chuang, Ricky Wen-kuei; Wen, Ten-Chin; Kuo, Chih-Hung; Lai, W. C.; Chang, C. S.; Tsai, J. M.; Sheu, Jinn-Kong |
國立成功大學 |
2003-05 |
InGaN/GaN LEDs with a Si-doped InGaN/GaN short-period superlattice tunneling contact layer
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Wu, L. W.; Chang, Shoou-Jinn; Su, Yan-Kuin; Tsai, T. Y.; Wen, Ten-Chin; Kuo, C. H.; Lai, W. C.; Sheu, Jinn-Kong; Tsai, J. M.; Chen, S. C.; Huang, B. R. |
國立成功大學 |
2003-04-28 |
GaN Schottky barrier photodetectors with a low-temperature GaN cap layer
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Lee, M. L.; Sheu, J. K.; Lai, W. C.; Chang, Shoou-Jinn; Su, Yan-Kuin; Chen, M. G.; Kao, C. J.; Chi, Gou-Chung; Tsai, J. M. |
國立成功大學 |
2003-03 |
Improved ESD protection by combining InGaN-GaN MQW LEDs with GaN Schottky diodes
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Chang, Shoou-Jinn; Chen, C. H.; Su, Yan-Kuin; Sheu, Jinn-Kong; Lai, W. C.; Tsai, J. M.; Liu, C. H.; Chen, S. C. |
國立成功大學 |
2003-02 |
Si and Zn co-doped InGaN-GaN white light-emitting diodes
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Chang, Shoou-Jinn; Wu, L. W.; Su, Yan-Kuin; Kuo, C. H.; Lai, W. C.; Hsu, Y. P.; Sheu, Jinn-Kong; Chen, S. F.; Tsai, J. M. |
國立成功大學 |
2003-01 |
White-light emission from near UV InGaN-GaN LED chip precoated with blue/green/red phosphors
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Sheu, Jinn-Kong; Chang, Shoou-Jinn; Kuo, C. H.; Su, Yan-Kuin; Wu, L. W.; Lin, Y. C.; Lai, W. C.; Tsai, J. M.; Chi, Gou-Chung; Wu, R. K. |
國立成功大學 |
2003 |
Characterizations of GaN Schottky barrier photodetectors with a highly-resistivity low-temperature GaN cap layer
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Lee, M. L.; �Sheu, �Jinn-Kong; Lai, W. C.; Chang, S. J.; Su, Y. K.; Chen, M. G.; Kao, C. J.; Tsai, J. M.; G.C.Chi |
國立成功大學 |
2003 |
Nitride-Based Near-Ultraviolet Multiple-Quantum Well Light-Emitting Diodes with AlGaN Barrier Layers
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Kao, C. J.; Chang, S. J.; Su, Y. K.; Wu, L. W.; �Sheu, �Jinn-Kong; Wen, T. C.; Lai, W. C.; Tsai, J. M.; S.C. Chen |
國立成功大學 |
2003 |
Low-dark-current GaN Metal-Semiconductor-Metal photodetectors with low-temperature GaN cap layer
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Chang, S. J.; Lee, M. L.; �Sheu, �Jinn-Kong; Lai, W. C.; Su, Y. K.; Chang, C. S.; Kao, C. J.; Chi, G. C.; Tsai, J. M. |
國立成功大學 |
2003 |
Nitride-based LEDs with Si-Doped In0.23Ga0.77N/GaN Short-Period Superlattice Tunneling Contact Layer
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Kuo, C. H.; Chang, S. J.; Su, Y. K.; Chen, J. F.; �Sheu, �Jinn-Kong; Tsai, J. M. |
國立成功大學 |
2003 |
Low-dark current, high-sensitivity metal-semiconductor-metal ultraviolet photodetectors based on GaN with low-temperature GaN intermediate layer
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�Sheu, �Jinn-Kong; Kao, C. J.; Lee, M. L.; Lai, W. C.; Yeh, L. S.; Chi, G. C.; Chang, S. J.; Su, Y. K.; Tsai, J. M. |
國立成功大學 |
2003 |
Nitride-based near UV MQW LEDs with AlGaN barrier layers
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Chang, S. J.; Kuo, C. H.; Su, Y. K.; Wu, L. W.; �Sheu, �Jinn-Kong; Wen, T. C.; Lai, W. C.; Chen, J. F.; Tsai, J. M. |
國立臺灣大學 |
2003 |
Species database project of the TAI herbarium
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Hsieh, C. F.; Yang, S. Y.; Tsai, J. M. |
國立臺灣大學 |
2003 |
Index for Chinese Name
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Hsieh, C. F.; Hsiao, A.; Tsai, J. M. |
國立臺灣大學 |
2003 |
Index for Scientific Name
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Hsieh, C. F.; Hsiao, A.; Tsai, J. M. |
Showing items 21-45 of 49 (2 Page(s) Totally) 1 2 > >> View [10|25|50] records per page
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