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Showing items 1-39 of 39 (1 Page(s) Totally)
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| 朝陽科技大學 |
2023-02 |
Hydrogen detecting characteristics and an improved algorithm for data transmission of a palladium nanoparticle/amorphous InGaZnO thin film based sensor
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Niu, Jing-Shiuan; Chen, Po-Lin; Chang, Chia-Wei; Tsai, Jung-Hui; Lin, Kun-Wei; Hsu, Wei-Chou; Liu, Wen-Chau; 林坤緯 |
| 朝陽科技大學 |
2023-01 |
An Indium–Gallium–Zinc–Oxide Layer Decorated With Gold Nanoparticles for Ultrahigh Sensitive Formaldehyde Gas Detection
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Niu, ing-Shiuan; Chen, Po-Lin; Lin, Kun-Wei; Tsai, Jung-Hui; Hsu, Wei-Chou; Liu, Wen-Chau; 林坤緯 |
| 朝陽科技大學 |
2021-12 |
Study of a Highly Sensitive Formaldehyde Sensor Prepared with a Tungsten Trioxide Thin Film and Gold Nanoparticles
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林坤緯; Lin, Kun-Wei; Niu, Jing-Shiuan; Liu, I-Ping; Lee, Cheng; Tsai, Jung-Hui; Liu, Wen-Chau |
| 朝陽科技大學 |
2021-03 |
Hydrogen sensing properties of a novel GaN/AlGaN Schottky diode decorated with palladium nanoparticles and a platinum thin film
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Chang, Ching-Hong;Chou, Tzu-Chieh;Chen, Wei-Cheng;Niu, Jing-Shiuan;Lin, Kun-Wei;Cheng, Shiou-Ying;Tsai, Jung-Hui;Liu, Wen-Chau; 林坤緯 |
| 國立成功大學 |
2016-10 |
A Pt/AlGaN/GaN heterostructure field-effect transistor (HFET) prepared by an electrophoretic deposition (EPD)-gate approach
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Hung, Ching-Wen; Chang, Ching-Hong; Chen, Wei-Cheng; Chen, Chun-Chia; Chen, Huey-Ing; Tsai, Yu-Ting; Tsai, Jung-Hui; Liu, Wen-Chau |
| 國立高雄師範大學 |
2016-08 |
新型磷銦鋁鎵/砷化銦鎵積體化異質結構場效電晶體及邏輯與氣體感測器應用之研究(II)
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蔡榮輝; Tsai, Jung-Hui |
| 國立成功大學 |
2016-04 |
Al0.25Ga0.75N/GaN enhancement-mode MOS high-electron-mobility transistors with Al2O3 dielectric obtained by ozone water oxidization method
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Lee, Ching-Sung; Hsu, Wei-Chou; Liu, Han-Yin; Tsai, Jung-Hui; Huang, Hung-Hsi |
| 國立成功大學 |
2015-10 |
Enhanced Light Extraction of a High-Power GaN-Based Light-Emitting Diode With a Nanohemispherical Hybrid Backside Reflector
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Liou, Jian-Kai; Chen, Wei-Cheng; Chang, Ching-Hong; Chang, Yu-Chih; Tsai, Jung-Hui; Liu, Wen-Chau |
| 國立成功大學 |
2015-03 |
An enhancement-mode pseudomorphic high electron mobility transistor prepared by an Electroless Plating (EP) and a gate-sinking approaches
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Chen, Chun-Chia; Chen, Huey-Ing; Liu, I-Ping; Chou, Po-Cheng; Liou, Jian-Kai; Tsai, Jung-Hui; Liu, Wen-Chau |
| 國立成功大學 |
2014-09 |
Influence of gate-to-source and gate-to-drain recesses on GaAs camel-like gate field-effect transistors
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Tsai, Jung-Hui; Wu, You-Ren; Chiang, Chung-Cheng; Wang, Fu-Min; Liu, Wen-Chau |
| 國立成功大學 |
2014-03 |
Implementation of High-Power GaN-Based LEDs With a Textured 3-D Backside Reflector Formed by Inserting a Self-Assembled SiO2 Nanosphere Monolayer
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Liou, Jian-Kai; Chou, Po-Cheng; Chen, Chun-Chia; Chang, Yu-Chih; Hsu, Wei-Chou; Cheng, Shiou-Ying; Tsai, Jung-Hui; Liu, Wen-Chan |
| 國立成功大學 |
2014-01 |
Performance Enhancement on an InGaP/InGaAs PHEMT With an Electrophoretic Deposition Gate Structure
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Chen, Chun-Chia; Chen, Huey-Ing; Chou, Po-Cheng; Liou, Jian-Kai; Chiou, Yung-Jen; Tsai, Jung-Hui; Liu, Wen-Chau |
| 國立成功大學 |
2013-07 |
Effects of the Use of an Aluminum Reflecting and an SiO2 Insulating Layers (RIL) on the Performance of a GaN-Based Light-Emitting Diode With the Naturally Textured p-GaN Surface
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Liou, Jian-Kai; Chen, Chun-Chia; Chou, Po-Cheng; Cheng, Shiou-Ying; Tsai, Jung-Hui; Liu, Rong-Chau; Liu, Wen-Chau |
| 國立臺灣海洋大學 |
2011-02 |
Comparative investigation of InGaP/GaAs pseudomorphic field-effect transistors with triple doped-channel profiles
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Lour, Wen-Shiung; Guo, Der-Feng; Tsai, Jung-Hui |
| 國立臺灣海洋大學 |
2009-07 |
Comprehensive investigation on planar type of Pd–GaN hydrogen sensors
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CHIU Shao-Yen;HUANG Hsuan-Wei;HUANG Tze-Hsuan;LIANG Kun-Chieh;LIU Kang-Ping;TSAI Jung-Hui;LOUR Wen-Shiung |
| 國立成功大學 |
2009-05-21 |
InGaP/GaAs/InGaAs delta-doped p-channel field-effect transistor with p(+)/n(+)/p camel-like gate structure
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Tsai, Jung-Hui; Lour, W. S.; Liu, Wen-Chau |
| 國立成功大學 |
2009-02 |
On the breakdown behaviors of InP/InGaAs based heterojunction bipolar transistors (HBTs)
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Chen, Tzu-Pin; Lee, Chi-Jhung; Lour, Wen-Shiung; Guo, Der-Feng; Tsai, Jung-Hui; Liu, Wen-Chau |
| 國立成功大學 |
2009-01 |
Microwave complementary doped-channel field-effect transistors
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Tsai, Jung-Hui; Chiu, Shao-Yen; Lour, Wen-Shiung; Liu, Wen-Chau; Li, Chien-Ming; Su, Ning-Xing; Wu, Yi-Zhen; Huang, Yin-Shan |
| 國立成功大學 |
2009 |
Effect of Emitter Ledge Thickness on InGaP/GaAs Heterojunction Bipolar Transistors
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Chen, Tzu-Pin; Lee, Chi-Jhung; Cheng, Shiou-Ying; Lour, Wen-Shiung; Tsai, Jung-Hui; Guo, Der-Feng; Ku, Ghun-Wei; Liu, Wen-Chau |
| 國立成功大學 |
2008-12 |
Effect of the non-annealed ohmic-recess approach on temperature-dependent properties of a metamorphic high electron mobility transistor
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Chen, Li-Yang; Cheng, Shiou-Ying; Lour, Wen-Shiung; Tsai, Jung-Hui; Guo, Der-Feng; Tsai, Tsung-Han; Chen, Tzu-Pin; Liu, Yi-Chun; Liu, Wen-Chau |
| 國立成功大學 |
2008-03 |
Electrical properties of the InP/InGaAs pnp heterostructure-emitter bipolar transistor
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Tsai, Jung-Hui; Liu, Wen-Chau; Guo, D. F.; Kang, Y. Ch.; Chiu, Shao-Yen; Lone, W. Sh. |
| 國立成功大學 |
2008-02 |
Investigation on heterostructural optoelectronic switches
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Guo, Der-Feng; Tsai, Jung-Hui; Weng, Tzu-Yen; Yeng, Chih-Hung; Lai, Po-Hsien; Fu, Ssu-Yi; Hung, Ching-Wen; Liu, Wen-Chau |
| 國立成功大學 |
2008-01 |
Low-dark-current heterojunction phototransistors with long-term stable passivation induced by neutralized (NH4)(2)S treatment
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Chiu, Shao-Yen; Chen, Hon-Rung; Chen, Wei-Tien; Hsu, Meng-Kai; Liu, Wen-Chau; Tsai, Jung-Hui; Lour, Wen-Shiung |
| 國立成功大學 |
2007-02-01 |
Surface treatment effect on temperature-dependent properties of InGaP/GaAs heterobipolar transistors
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Chen, Tzu-Pin; Fu, Ssu-I; Liu, Wen-Chau; Cheng, Shiou-Ying; Tsai, Jung-Hui; Guo, Der-Feng; Lour, Wen-Shiung |
| 國立成功大學 |
2007 |
Characteristics improvement for an n-p-n heterostructure optoelectronic switch by introducing a wide-gap layer in the collector
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Guo, Der-Feng; Yen, Chih-Hung; Tsai, Jung-Hui; Lour, Wen-Shiung; Liu, Wen-Chau |
| 國立成功大學 |
2007 |
Temperature effect of a heterojunction bipolar transistor with an emitter-edge-thinning structure
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Chen, Tzu-Pin; Fu, Ssu-I; Lour, Wen-Shiung; Tsai, Jung-Hui; Guo, Der-Feng; Liu, Wen-Chau |
| 國立成功大學 |
2007 |
Investigation of amplifying and switching characteristics in double heterostructure-emitter bipolar transistors
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Guo, Der-Feng; Yen, Chih-Hung; Tsai, Jung-Hui; Lour, Wen-Shiung; Liu, Wen-Chau |
| 國立成功大學 |
2006-12 |
Temperature-dependent characteristics of an emitter-ledge passivated InGaP/GaAs heterojunction bipolar transistor
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Chen, Tzu-Pin; Fu, Ssu-I; Tsai, Jung-Hui; Lour, Wen-Shiung; Guo, Der-Feng; Cheng, Shiou-Ying; Liu, Wen-Chau |
| 國立成功大學 |
2006-09 |
Temperature dependences of an In0.46Ga0.54As/In0.42Al0.58As based metamorphic high electron mobility transistor (MHEMT)
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Chen, Chun-Wei; Lai, Po-Hsien; Lour, Wen-Shiung; Guo, Der-Feng; Tsai, Jung-Hui; Liu, Wen-Chau |
| 國立成功大學 |
2006-08 |
Application of double camel-like gate structures for a GaAs field-effect transistor with extremely high potential barrier height and gate turn-on voltage
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Tsai, Jung-Hui; Chiu, Shao-Yen; Lour, Wen-Shiung; Guo, Der-Feng; Liu, Wen-Chau |
| 國立成功大學 |
2001-08 |
On the InGaP/GaAs/InGaAs camel-like FET for high-breakdown, low-leakage, and high-temperature operations
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Liu, Wen-Chau; Yu, Kuo-Hui; Lin, Kun-Wei; Tsai, Jung-Hui; Wu, Cheng-Zu; Lin, Kuan-Po; Yen, Chih-Hung |
| 國立成功大學 |
2001-02 |
Study of the multiple-negative-differential-resistance (MNDR) switching behaviors based on heterojunction bipolar transistor (HBT) structures
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Wang, Wei-Chou; Pan, Hsi-Jen; Yu, Kuo-Hui; Lin, Kun-Wei; Tsai, Jung-Hui; Cheng, Shiou-Ying; Liu, Wen-Chau |
| 國立成功大學 |
2001-01 |
Temperature dependence of gate current and breakdown behaviors in an n(+)-GaAs/p(+)-InGaP/n(-)-GaAs high-barrier gate field-effect transistor
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Yu, Kuo-Hui; Lin, Kun-Wei; Cheng, Chin-Chuan; Chang, Wen-Lung; Tsai, Jung-Hui; Cheng, Shiou-Ying; Liu, Wen-Chau |
| 國立成功大學 |
2000-04 |
A new wide voltage operation regime double heterojunction bipolar transistor
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Cheng, Shiou-Ying; Pan, Hsi-Jen; Feng, Shun-Ching; Yub, Kuo-Hui; Tsai, Jung-Hui; Liu, Wen-Chau |
| 國立成功大學 |
1999-04 |
Investigation of an InGaP GaAs resonant-tunneling transistor (RTT)
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Cheng, Shiou-Ying; Tsai, Jung-Hui; Chang, Wen-Lung; Pan, Hsi-Jen; Shie, Yung-Hsin; Liu, Wen-Chau |
| 國立成功大學 |
1998-07-01 |
Investigation of GaAs-based heterostructure-emitter bipolar transistors (HEBTs)
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Liu, Wen-Chau; Tsai, Jung-Hui; Cheng, Shiou-Ying; Chang, Wen-Lung; Pan, Hsi-Jen; Shie, Yung-Hsin |
| 國立成功大學 |
1998 |
An extremely low offset voltage AlInAs/GaInAs heterostructure-emitter bipolar transistor
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Tsai, Jung-Hui; Cheng, Shiou-Ying; Laih, Lih-Wen; Liu, Wen-Chau; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1998 |
An extremely low offset voltage AlInAs/GaInAs heterostructure-emitter bipolar transistor
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Tsai, Jung-Hui; Cheng, Shiou-Ying; Laih, Lih-Wen; Liu, Wen-Chau; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1996 |
On the recombination currents effect of heterostructure-emitter bipolar transistors (HEBTs)
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Tsai, Jung-Hui; Laih, Lih-Wen; Shih, Hui-Jung; Liu, Wen-Chau; Lin, Hao-Hsiung |
Showing items 1-39 of 39 (1 Page(s) Totally)
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