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Showing items 11-35 of 39 (2 Page(s) Totally)
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| 國立成功大學 |
2014-03 |
Implementation of High-Power GaN-Based LEDs With a Textured 3-D Backside Reflector Formed by Inserting a Self-Assembled SiO2 Nanosphere Monolayer
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Liou, Jian-Kai; Chou, Po-Cheng; Chen, Chun-Chia; Chang, Yu-Chih; Hsu, Wei-Chou; Cheng, Shiou-Ying; Tsai, Jung-Hui; Liu, Wen-Chan |
| 國立成功大學 |
2014-01 |
Performance Enhancement on an InGaP/InGaAs PHEMT With an Electrophoretic Deposition Gate Structure
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Chen, Chun-Chia; Chen, Huey-Ing; Chou, Po-Cheng; Liou, Jian-Kai; Chiou, Yung-Jen; Tsai, Jung-Hui; Liu, Wen-Chau |
| 國立成功大學 |
2013-07 |
Effects of the Use of an Aluminum Reflecting and an SiO2 Insulating Layers (RIL) on the Performance of a GaN-Based Light-Emitting Diode With the Naturally Textured p-GaN Surface
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Liou, Jian-Kai; Chen, Chun-Chia; Chou, Po-Cheng; Cheng, Shiou-Ying; Tsai, Jung-Hui; Liu, Rong-Chau; Liu, Wen-Chau |
| 國立臺灣海洋大學 |
2011-02 |
Comparative investigation of InGaP/GaAs pseudomorphic field-effect transistors with triple doped-channel profiles
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Lour, Wen-Shiung; Guo, Der-Feng; Tsai, Jung-Hui |
| 國立臺灣海洋大學 |
2009-07 |
Comprehensive investigation on planar type of Pd–GaN hydrogen sensors
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CHIU Shao-Yen;HUANG Hsuan-Wei;HUANG Tze-Hsuan;LIANG Kun-Chieh;LIU Kang-Ping;TSAI Jung-Hui;LOUR Wen-Shiung |
| 國立成功大學 |
2009-05-21 |
InGaP/GaAs/InGaAs delta-doped p-channel field-effect transistor with p(+)/n(+)/p camel-like gate structure
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Tsai, Jung-Hui; Lour, W. S.; Liu, Wen-Chau |
| 國立成功大學 |
2009-02 |
On the breakdown behaviors of InP/InGaAs based heterojunction bipolar transistors (HBTs)
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Chen, Tzu-Pin; Lee, Chi-Jhung; Lour, Wen-Shiung; Guo, Der-Feng; Tsai, Jung-Hui; Liu, Wen-Chau |
| 國立成功大學 |
2009-01 |
Microwave complementary doped-channel field-effect transistors
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Tsai, Jung-Hui; Chiu, Shao-Yen; Lour, Wen-Shiung; Liu, Wen-Chau; Li, Chien-Ming; Su, Ning-Xing; Wu, Yi-Zhen; Huang, Yin-Shan |
| 國立成功大學 |
2009 |
Effect of Emitter Ledge Thickness on InGaP/GaAs Heterojunction Bipolar Transistors
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Chen, Tzu-Pin; Lee, Chi-Jhung; Cheng, Shiou-Ying; Lour, Wen-Shiung; Tsai, Jung-Hui; Guo, Der-Feng; Ku, Ghun-Wei; Liu, Wen-Chau |
| 國立成功大學 |
2008-12 |
Effect of the non-annealed ohmic-recess approach on temperature-dependent properties of a metamorphic high electron mobility transistor
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Chen, Li-Yang; Cheng, Shiou-Ying; Lour, Wen-Shiung; Tsai, Jung-Hui; Guo, Der-Feng; Tsai, Tsung-Han; Chen, Tzu-Pin; Liu, Yi-Chun; Liu, Wen-Chau |
| 國立成功大學 |
2008-03 |
Electrical properties of the InP/InGaAs pnp heterostructure-emitter bipolar transistor
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Tsai, Jung-Hui; Liu, Wen-Chau; Guo, D. F.; Kang, Y. Ch.; Chiu, Shao-Yen; Lone, W. Sh. |
| 國立成功大學 |
2008-02 |
Investigation on heterostructural optoelectronic switches
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Guo, Der-Feng; Tsai, Jung-Hui; Weng, Tzu-Yen; Yeng, Chih-Hung; Lai, Po-Hsien; Fu, Ssu-Yi; Hung, Ching-Wen; Liu, Wen-Chau |
| 國立成功大學 |
2008-01 |
Low-dark-current heterojunction phototransistors with long-term stable passivation induced by neutralized (NH4)(2)S treatment
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Chiu, Shao-Yen; Chen, Hon-Rung; Chen, Wei-Tien; Hsu, Meng-Kai; Liu, Wen-Chau; Tsai, Jung-Hui; Lour, Wen-Shiung |
| 國立成功大學 |
2007-02-01 |
Surface treatment effect on temperature-dependent properties of InGaP/GaAs heterobipolar transistors
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Chen, Tzu-Pin; Fu, Ssu-I; Liu, Wen-Chau; Cheng, Shiou-Ying; Tsai, Jung-Hui; Guo, Der-Feng; Lour, Wen-Shiung |
| 國立成功大學 |
2007 |
Characteristics improvement for an n-p-n heterostructure optoelectronic switch by introducing a wide-gap layer in the collector
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Guo, Der-Feng; Yen, Chih-Hung; Tsai, Jung-Hui; Lour, Wen-Shiung; Liu, Wen-Chau |
| 國立成功大學 |
2007 |
Temperature effect of a heterojunction bipolar transistor with an emitter-edge-thinning structure
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Chen, Tzu-Pin; Fu, Ssu-I; Lour, Wen-Shiung; Tsai, Jung-Hui; Guo, Der-Feng; Liu, Wen-Chau |
| 國立成功大學 |
2007 |
Investigation of amplifying and switching characteristics in double heterostructure-emitter bipolar transistors
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Guo, Der-Feng; Yen, Chih-Hung; Tsai, Jung-Hui; Lour, Wen-Shiung; Liu, Wen-Chau |
| 國立成功大學 |
2006-12 |
Temperature-dependent characteristics of an emitter-ledge passivated InGaP/GaAs heterojunction bipolar transistor
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Chen, Tzu-Pin; Fu, Ssu-I; Tsai, Jung-Hui; Lour, Wen-Shiung; Guo, Der-Feng; Cheng, Shiou-Ying; Liu, Wen-Chau |
| 國立成功大學 |
2006-09 |
Temperature dependences of an In0.46Ga0.54As/In0.42Al0.58As based metamorphic high electron mobility transistor (MHEMT)
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Chen, Chun-Wei; Lai, Po-Hsien; Lour, Wen-Shiung; Guo, Der-Feng; Tsai, Jung-Hui; Liu, Wen-Chau |
| 國立成功大學 |
2006-08 |
Application of double camel-like gate structures for a GaAs field-effect transistor with extremely high potential barrier height and gate turn-on voltage
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Tsai, Jung-Hui; Chiu, Shao-Yen; Lour, Wen-Shiung; Guo, Der-Feng; Liu, Wen-Chau |
| 國立成功大學 |
2001-08 |
On the InGaP/GaAs/InGaAs camel-like FET for high-breakdown, low-leakage, and high-temperature operations
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Liu, Wen-Chau; Yu, Kuo-Hui; Lin, Kun-Wei; Tsai, Jung-Hui; Wu, Cheng-Zu; Lin, Kuan-Po; Yen, Chih-Hung |
| 國立成功大學 |
2001-02 |
Study of the multiple-negative-differential-resistance (MNDR) switching behaviors based on heterojunction bipolar transistor (HBT) structures
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Wang, Wei-Chou; Pan, Hsi-Jen; Yu, Kuo-Hui; Lin, Kun-Wei; Tsai, Jung-Hui; Cheng, Shiou-Ying; Liu, Wen-Chau |
| 國立成功大學 |
2001-01 |
Temperature dependence of gate current and breakdown behaviors in an n(+)-GaAs/p(+)-InGaP/n(-)-GaAs high-barrier gate field-effect transistor
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Yu, Kuo-Hui; Lin, Kun-Wei; Cheng, Chin-Chuan; Chang, Wen-Lung; Tsai, Jung-Hui; Cheng, Shiou-Ying; Liu, Wen-Chau |
| 國立成功大學 |
2000-04 |
A new wide voltage operation regime double heterojunction bipolar transistor
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Cheng, Shiou-Ying; Pan, Hsi-Jen; Feng, Shun-Ching; Yub, Kuo-Hui; Tsai, Jung-Hui; Liu, Wen-Chau |
| 國立成功大學 |
1999-04 |
Investigation of an InGaP GaAs resonant-tunneling transistor (RTT)
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Cheng, Shiou-Ying; Tsai, Jung-Hui; Chang, Wen-Lung; Pan, Hsi-Jen; Shie, Yung-Hsin; Liu, Wen-Chau |
Showing items 11-35 of 39 (2 Page(s) Totally)
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