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Showing items 26-35 of 40  (4 Page(s) Totally)
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Institution Date Title Author
亞洲大學 2012-09 Analysis of LDMOS for Effect of Fingers, Device-Width and Inductance on reverse recovery 蔡宗叡;Tsai, Jung-Ruey;楊紹明;Yang, Shao-Ming;許健;Sheu, Gene
亞洲大學 2012-08 Analysis of LDMOS for Effect of Finger and Device-width on Gate Feedback Charge 楊紹明;Yang, Shao-Ming;蔡宗叡;Tsai, Jung-Ruey;許健;Sheu, Gene
亞洲大學 2012-03 A New Methodology to Investigate the Effect of Stress and Bias on 2DEG and Drain Current of AlGaN/GaN Based Heterostructure 許健;Sheu, Gene;蔡宗叡;Tsai, Jung-Ruey;楊紹明;Yang, Shao-Ming
亞洲大學 2012-03 A New Methodology to Investigate the Effect of Stress and Bias on 2DEG and Drain Current of AlGaN-GaN Based Heterostructure 許健;Sheu, Gene;蔡宗叡;Tsai, Jung-Ruey;楊紹明;Yang, Shao-Ming
亞洲大學 2012-03 Effect of finger and device-width on ruggedness of nLDMOS device under Single-pulse Unclamped Inductive Switching (UIS) conditions 蔡宗叡;Tsai, Jung-Ruey
亞洲大學 2012-03 Optimization of nLDMOS ruggedness under Unclamped Inductive Switching (UIS) stress conditions by poly-gate extension 蔡宗叡;Tsai, Jung-Ruey;許健;Sheu, Gene;楊紹明;Yang, Shao-Ming
亞洲大學 2012-03 Analysis of LDMOS for Effect of Fingers, Device-Width and Inductance (Load) on Reverse Recovery 蔡宗叡;Tsai, Jung-Ruey;楊紹明;Yang, Shao-Ming;許健;Sheu, Gene
亞洲大學 2011-11 Design of Multiple RESURF LDMOS with P-top rings and STI regions in 65nm CMOS Technology 許健;Sheu, Gene;楊紹明;Yang, Shao-Ming;蔡宗叡;Tsai, Jung-Ruey
亞洲大學 2011-11 Self-Consistent Electro-Thermo-Mechanical Analysis of AlN Passivation Effect on AlGaN/GaN HEMTs 許健;Sheu, Gene;蔡宗叡;Tsai, Jung-Ruey;楊紹明;Yang, Shao-Ming
亞洲大學 2011-11 Development of ESD Robustness Enhancement of a Novel 800V LDMOS Multiple RESURF with Linear P-top Rings 蔡宗叡;Tsai, Jung-Ruey;許健;Sheu, Gene;楊紹明;Yang, Shao-Ming

Showing items 26-35 of 40  (4 Page(s) Totally)
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