| 國立交通大學 |
2014-12-08T15:32:59Z |
Low-voltage high-speed programming/erasing floating-gate memory device with gate-all-around polycrystalline silicon nanowire
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Lee, Ko-Hui; Tsai, Jung-Ruey; Chang, Ruey-Dar; Lin, Horng-Chih; Huang, Tiao-Yuan |
| 亞洲大學 |
2014-03 |
Optimization of electrical properties of Al/LaAlO3/Indium Tin Oxide capacitor by adjusting oxygen pressures in pulsed laser deposition and applying post-deposition annealing at low temperatures
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蔡宗叡;TSAI,JUNG-RUEY;馮文生;Feng, Wen-Sheng;簡伯修;Chien,Po-Hsiu;劉國辰;Liu, Kou-Chen |
| 亞洲大學 |
2014-03 |
A Gate-All-Around Floating-Gate Memory Device with Triangular-Shaped Poly-Si Nanowire Channels
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蔡宗叡;TSAI,JUNG-RUEY*;李克慧Lee, Ko-Hui Lee;林鴻志Lin, Horng-Chih;黃調元;Huang, Tiao-Yuan |
| 亞洲大學 |
2014-03 |
Optimization of electrical properties of Al/LaAlO3/Indium Tin Oxide capacitor by adjusting oxygen pressures in pulsed laser deposition and applying post-deposition annealing at low temperatures
|
蔡宗叡;TSAI, JUNG-RUEY;馮文生;Feng, Wen-Sheng;簡伯修;Chien, Po-Hsiu;劉國辰;Liu, Kou-Chen |
| 亞洲大學 |
2014-03 |
Phenethyl isothiocyanate triggers apoptosis in human malignant melanoma A375.S302 cells through reactive oxygen species and the mitochondria-dependent pathways
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蔡宗叡;TSAI,JUNG-RUEY;馮文生;Feng, Wen-Sheng;簡伯修;Chien, Po-Hsiu;劉國辰;Liu, Kou-Chen |
| 亞洲大學 |
2014-03 |
Phenethyl isothiocyanate triggers apoptosis in human malignant melanoma A375.S303 cells through reactive oxygen species and the mitochondria-dependent pathways
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蔡宗叡;TSAI,JUNG-RUEY;李克慧;Lee, Ko-Hui Lee;林鴻志;Lin, Horng-Chih;黃調元;Huang, Tiao-Yuan |
| 亞洲大學 |
2013.06 |
以高介電係數三氧化二釤與氧化鉿釤作為閘極絕緣層製作高遷移率之氧化銦鋅透明薄膜電晶體
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陳柏任;蔡宗叡;TSAI, JUNG-RUEY;吳國宏;劉國辰;鄭峻文;吳孟奇 |
| 亞洲大學 |
2013.06 |
利用氧電漿改善二氧化鉿特性應用於氧化銦鎵鋅薄膜電晶體
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彭立儀;林文凱;吳國宏;蔡宗叡;TSAI, JUNG-RUEY;劉國辰 |
| 亞洲大學 |
2013-10 |
A Gate-All-Around Floating-Gate Memory Device with Triangular-Shaped Poly-Si Nanowire Channels
|
蔡宗叡;TSAI, JUNG-RUEY;李克慧;Lee, Ko-Hui Lee;林鴻志;Lin, Horng-Chih;黃調元;Huang, Tiao-Yuan |
| 亞洲大學 |
2013-10 |
A Gate-All-Around Floating-Gate Memory Device with Triangular-Shaped Poly-Si Nanowire Channels
|
蔡宗叡;TSAI, JUNG-RUEY;李克慧;Lee, Ko-Hui Lee;林鴻志;Lin, Horng-Chih;黃調元;Huang, Tiao-Yuan |
| 亞洲大學 |
2013-10 |
Low-voltage high-speed programming/erasing floating-gate memory device with gate-all-around polycrystalline silicon nanowire
|
Lee, Ko-Hui;李克慧;蔡宗叡;TSAI, JUNG-RUEY;張睿達;Chang, Ruey-Dar;林鴻志;Huang, Horng-Chih;黃調元;Tiao-Yuan, Huang |
| 亞洲大學 |
2012.10 |
Room temperature fabricated transparent IZO thin-film transistor with a high-k gate dielectric of LaAlO3 film
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蔡宗叡;TSAI, JUNG-RUEY;林文凱;Lin, Wen-Kai |
| 亞洲大學 |
2012.07 |
Effects of Oxygen Pressure and Post-Deposition Annealing on the Characteristics of Pulsed Laser Deposited High-k Dielectric LaAlO3 Films on Indium Tin Oxide Films
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蔡宗叡;TSAI, JUNG-RUEY;林文凱;Lin, Wen-Kai;馮文生;Feng, Wen-Sheng;劉國辰;Liu, Kou-Chen |
| 亞洲大學 |
2012-09 |
Failure Analysis of Power MOSFETs based on Multi-finger Configuration under Unclamped Inductive Switching (UIS) Stress Condition
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楊紹明;Yang, Shao-Ming;蔡宗叡;Tsai, Jung-Ruey;許健;Sheu, Gene |
| 亞洲大學 |
2012-09 |
Shifting Time Waveform Induced CMOS Latch Up in Bootstrapping Technique Applications
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蔡宗叡;Tsai, Jung-Ruey;許健;Sheu, Gene |
| 亞洲大學 |
2012-09 |
Analysis of LDMOS for Effect of Fingers, Device-Width and Inductance on reverse recovery
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蔡宗叡;Tsai, Jung-Ruey;楊紹明;Yang, Shao-Ming;許健;Sheu, Gene |
| 亞洲大學 |
2012-08 |
Analysis of LDMOS for Effect of Finger and Device-width on Gate Feedback Charge
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楊紹明;Yang, Shao-Ming;蔡宗叡;Tsai, Jung-Ruey;許健;Sheu, Gene |
| 亞洲大學 |
2012-03 |
A New Methodology to Investigate the Effect of Stress and Bias on 2DEG and Drain Current of AlGaN/GaN Based Heterostructure
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許健;Sheu, Gene;蔡宗叡;Tsai, Jung-Ruey;楊紹明;Yang, Shao-Ming |
| 亞洲大學 |
2012-03 |
A New Methodology to Investigate the Effect of Stress and Bias on 2DEG and Drain Current of AlGaN-GaN Based Heterostructure
|
許健;Sheu, Gene;蔡宗叡;Tsai, Jung-Ruey;楊紹明;Yang, Shao-Ming |
| 亞洲大學 |
2012-03 |
Effect of finger and device-width on ruggedness of nLDMOS device under Single-pulse Unclamped Inductive Switching (UIS) conditions
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蔡宗叡;Tsai, Jung-Ruey |
| 亞洲大學 |
2012-03 |
Optimization of nLDMOS ruggedness under Unclamped Inductive Switching (UIS) stress conditions by poly-gate extension
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蔡宗叡;Tsai, Jung-Ruey;許健;Sheu, Gene;楊紹明;Yang, Shao-Ming |
| 亞洲大學 |
2012-03 |
Analysis of LDMOS for Effect of Fingers, Device-Width and Inductance (Load) on Reverse Recovery
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蔡宗叡;Tsai, Jung-Ruey;楊紹明;Yang, Shao-Ming;許健;Sheu, Gene |
| 亞洲大學 |
2011-11 |
Design of Multiple RESURF LDMOS with P-top rings and STI regions in 65nm CMOS Technology
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許健;Sheu, Gene;楊紹明;Yang, Shao-Ming;蔡宗叡;Tsai, Jung-Ruey |
| 亞洲大學 |
2011-11 |
Self-Consistent Electro-Thermo-Mechanical Analysis of AlN Passivation Effect on AlGaN/GaN HEMTs
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許健;Sheu, Gene;蔡宗叡;Tsai, Jung-Ruey;楊紹明;Yang, Shao-Ming |
| 亞洲大學 |
2011-11 |
Development of ESD Robustness Enhancement of a Novel 800V LDMOS Multiple RESURF with Linear P-top Rings
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蔡宗叡;Tsai, Jung-Ruey;許健;Sheu, Gene;楊紹明;Yang, Shao-Ming |
| 亞洲大學 |
2011-08 |
Improvement of Electrical Characteristics in LDMOS by the Insertion of PBL
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許健;Sheu, Gene;蔡宗叡;Tsai, Jung-Ruey;楊紹明;Yang, Shao-Ming |
| 亞洲大學 |
2011-08 |
Improvement of Electrical Characteristics in LDMOS by the Insertion of PBL and Gate Extended Field Plate Technologies
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許健;Sheu, Gene;蔡宗叡;Tsai, Jung-Ruey;楊紹明;Yang, Shao-Ming |
| 亞洲大學 |
2011-08 |
Application of Multi-Lateral Double Diffused Field Ring in Ultrahigh-Voltage Device MOS Transistor Design
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楊紹明;Yang, Shao-Ming;許健;Sheu, Gene;蔡宗叡;Tsai, Jung-Ruey |
| 亞洲大學 |
2011-08 |
Effects of SiO2 passivation on AlGaN/GaN HEMT by self-consistent electro-thermal-mechanical simulation
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楊紹明;Yang, Shao-Ming;許健;Sheu, Gene;蔡宗叡;Tsai, Jung-Ruey |
| 亞洲大學 |
2010-11 |
A 5V/200V SOI Device with a Vertically Linear Graded Drift Region
|
楊紹明;Yang, Shao-Ming;許健;Sheu, Gene;蔡宗叡;Tsai, Jung-Ruey |
