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"tsai jung ruey"的相关文件
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| 國立交通大學 |
2018-08-21T05:53:54Z |
Impact of gate dielectrics and oxygen annealing on tin-oxide thin-film transistors
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Zhong, Chia-Wen; Lin, Horng-Chih; Tsai, Jung-Ruey; Liu, Kou-Chen; Huang, Tiao-Yuan |
| 國立交通大學 |
2018-08-21T05:52:54Z |
Effect of dose loss of phosphorus on capacitance-voltage characteristics of n-type poly-Si junctionless thin-film transistors
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Tsai, Jung-Ruey; Wen, Ting-Ting; Lin, Horng-Chih |
| 國立交通大學 |
2017-04-21T06:49:47Z |
Reliability Analysis of Amorphous Silicon Thin-Film Transistors during Accelerated ESD Stress
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Tsai, Jung-Ruey; Wen, Ting-Ting; Yang, Shao-Ming; Sheu, Gene; Chang, Ruey-Dar; Syu, Yi-Jhen; Liu, Chin-Ping; Chang, Hsiu-Fu; Wei, Zhao-Hui |
| 國立交通大學 |
2017-04-21T06:49:44Z |
Comparison of Electrical Characteristics of N-type Silicon Junctionless Transistors with and without Film Profile Engineering by TCAD Simulation
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Tsai, Jung-Ruey; Lin, Horng-Chih; Chang, Hsiu-Fu; Shie, Bo-Shiuan; Wen, Ting-Ting; Huang, Tiao-Yuan |
| 國立交通大學 |
2017-04-21T06:48:58Z |
Impact of gate dielectrics and oxygen annealing on tin-oxide thin-film transistors
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Zhong, Chia-Wen; Lin, Horng-Chih; Tsai, Jung-Ruey; Liu, Kou-Chen; Huang, Tiao-Yuan |
| 國立交通大學 |
2017-04-21T06:48:27Z |
ENGINEERED THRESHOLD VOLTAGE IN ALGAN/GAN HEMTS FOR NORMALLY-OFF OPERATION
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Tsai, Jung-Ruey; Chang, Yi-Sheng; Wei, Kuo-Shu; Wen, Ting-Ting |
| 亞洲大學 |
2015-06 |
Reliability Analysis of Amorphous Silicon Thin-Film Transistors during Accelerated ESD stress
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蔡宗叡;TSAI, JUNG-RUEY;楊紹明;Yang, Shao-Ming;許健;Sheu, Gene;Cha, Ruey Dar;Chang, Ruey Dar;We, Ting Ting;Wen, Ting Ting |
| 亞洲大學 |
2015-03 |
Nitrogen ratio and RTA optimization on sputtered TiN/SiO2/Si electrolyte-insulatoresemiconductor structure for pH sensing characteristics
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Ren, Chang;Ren, Chang;Ya, Chia-Ming;Yang, Chia-Ming;Lyu, Chengang;Lyu, Chengang;Hs, Chin-Yuan;Hsu, Chin-Yuan;Tsung-Cheng;Chen, Tsung-Cheng;Wa, Hau-Cheng;Wang, Hau-Cheng;Yang, Hao;Yang, Hao;Lin, Wei-Tse;Lin, Wei-Tse;Dorota, G.Pi;Dorota, G.Pijanowska;Wan, Jer-Chyi;Wang, Jer-Chyi;蔡宗叡;TSAI, JUNG-RUEY |
| 亞洲大學 |
2015-02 |
ENGINEERED THRESHOLD VOLTAGE IN ALGAN/GAN HEMTS FOR NORMALLY-OFF OPERATION
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蔡宗叡;TSAI, JUNG-RUEY;Cha, Yi-Sheng;Chang, Yi-Sheng;Wei, Kuo-Shu;Wei, Kuo-Shu;We, Ting-Ting;Wen, Ting-Ting |
| 國立交通大學 |
2014-12-08T15:36:25Z |
Gate-all-around floating-gate memory device with triangular poly-Si nanowire channels
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Tsai, Jung-Ruey; Lee, Ko-Hui; Lin, Horng-Chih; Huang, Tiao-Yuan |
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