| 國立交通大學 |
2018-08-21T05:53:54Z |
Impact of gate dielectrics and oxygen annealing on tin-oxide thin-film transistors
|
Zhong, Chia-Wen; Lin, Horng-Chih; Tsai, Jung-Ruey; Liu, Kou-Chen; Huang, Tiao-Yuan |
| 國立交通大學 |
2018-08-21T05:52:54Z |
Effect of dose loss of phosphorus on capacitance-voltage characteristics of n-type poly-Si junctionless thin-film transistors
|
Tsai, Jung-Ruey; Wen, Ting-Ting; Lin, Horng-Chih |
| 國立交通大學 |
2017-04-21T06:49:47Z |
Reliability Analysis of Amorphous Silicon Thin-Film Transistors during Accelerated ESD Stress
|
Tsai, Jung-Ruey; Wen, Ting-Ting; Yang, Shao-Ming; Sheu, Gene; Chang, Ruey-Dar; Syu, Yi-Jhen; Liu, Chin-Ping; Chang, Hsiu-Fu; Wei, Zhao-Hui |
| 國立交通大學 |
2017-04-21T06:49:44Z |
Comparison of Electrical Characteristics of N-type Silicon Junctionless Transistors with and without Film Profile Engineering by TCAD Simulation
|
Tsai, Jung-Ruey; Lin, Horng-Chih; Chang, Hsiu-Fu; Shie, Bo-Shiuan; Wen, Ting-Ting; Huang, Tiao-Yuan |
| 國立交通大學 |
2017-04-21T06:48:58Z |
Impact of gate dielectrics and oxygen annealing on tin-oxide thin-film transistors
|
Zhong, Chia-Wen; Lin, Horng-Chih; Tsai, Jung-Ruey; Liu, Kou-Chen; Huang, Tiao-Yuan |
| 國立交通大學 |
2017-04-21T06:48:27Z |
ENGINEERED THRESHOLD VOLTAGE IN ALGAN/GAN HEMTS FOR NORMALLY-OFF OPERATION
|
Tsai, Jung-Ruey; Chang, Yi-Sheng; Wei, Kuo-Shu; Wen, Ting-Ting |
| 亞洲大學 |
2015-06 |
Reliability Analysis of Amorphous Silicon Thin-Film Transistors during Accelerated ESD stress
|
蔡宗叡;TSAI, JUNG-RUEY;楊紹明;Yang, Shao-Ming;許健;Sheu, Gene;Cha, Ruey Dar;Chang, Ruey Dar;We, Ting Ting;Wen, Ting Ting |
| 亞洲大學 |
2015-03 |
Nitrogen ratio and RTA optimization on sputtered TiN/SiO2/Si electrolyte-insulatoresemiconductor structure for pH sensing characteristics
|
Ren, Chang;Ren, Chang;Ya, Chia-Ming;Yang, Chia-Ming;Lyu, Chengang;Lyu, Chengang;Hs, Chin-Yuan;Hsu, Chin-Yuan;Tsung-Cheng;Chen, Tsung-Cheng;Wa, Hau-Cheng;Wang, Hau-Cheng;Yang, Hao;Yang, Hao;Lin, Wei-Tse;Lin, Wei-Tse;Dorota, G.Pi;Dorota, G.Pijanowska;Wan, Jer-Chyi;Wang, Jer-Chyi;蔡宗叡;TSAI, JUNG-RUEY |
| 亞洲大學 |
2015-02 |
ENGINEERED THRESHOLD VOLTAGE IN ALGAN/GAN HEMTS FOR NORMALLY-OFF OPERATION
|
蔡宗叡;TSAI, JUNG-RUEY;Cha, Yi-Sheng;Chang, Yi-Sheng;Wei, Kuo-Shu;Wei, Kuo-Shu;We, Ting-Ting;Wen, Ting-Ting |
| 國立交通大學 |
2014-12-08T15:36:25Z |
Gate-all-around floating-gate memory device with triangular poly-Si nanowire channels
|
Tsai, Jung-Ruey; Lee, Ko-Hui; Lin, Horng-Chih; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:32:59Z |
Low-voltage high-speed programming/erasing floating-gate memory device with gate-all-around polycrystalline silicon nanowire
|
Lee, Ko-Hui; Tsai, Jung-Ruey; Chang, Ruey-Dar; Lin, Horng-Chih; Huang, Tiao-Yuan |
| 亞洲大學 |
2014-03 |
Optimization of electrical properties of Al/LaAlO3/Indium Tin Oxide capacitor by adjusting oxygen pressures in pulsed laser deposition and applying post-deposition annealing at low temperatures
|
蔡宗叡;TSAI,JUNG-RUEY;馮文生;Feng, Wen-Sheng;簡伯修;Chien,Po-Hsiu;劉國辰;Liu, Kou-Chen |
| 亞洲大學 |
2014-03 |
A Gate-All-Around Floating-Gate Memory Device with Triangular-Shaped Poly-Si Nanowire Channels
|
蔡宗叡;TSAI,JUNG-RUEY*;李克慧Lee, Ko-Hui Lee;林鴻志Lin, Horng-Chih;黃調元;Huang, Tiao-Yuan |
| 亞洲大學 |
2014-03 |
Optimization of electrical properties of Al/LaAlO3/Indium Tin Oxide capacitor by adjusting oxygen pressures in pulsed laser deposition and applying post-deposition annealing at low temperatures
|
蔡宗叡;TSAI, JUNG-RUEY;馮文生;Feng, Wen-Sheng;簡伯修;Chien, Po-Hsiu;劉國辰;Liu, Kou-Chen |
| 亞洲大學 |
2014-03 |
Phenethyl isothiocyanate triggers apoptosis in human malignant melanoma A375.S302 cells through reactive oxygen species and the mitochondria-dependent pathways
|
蔡宗叡;TSAI,JUNG-RUEY;馮文生;Feng, Wen-Sheng;簡伯修;Chien, Po-Hsiu;劉國辰;Liu, Kou-Chen |
| 亞洲大學 |
2014-03 |
Phenethyl isothiocyanate triggers apoptosis in human malignant melanoma A375.S303 cells through reactive oxygen species and the mitochondria-dependent pathways
|
蔡宗叡;TSAI,JUNG-RUEY;李克慧;Lee, Ko-Hui Lee;林鴻志;Lin, Horng-Chih;黃調元;Huang, Tiao-Yuan |
| 亞洲大學 |
2013.06 |
以高介電係數三氧化二釤與氧化鉿釤作為閘極絕緣層製作高遷移率之氧化銦鋅透明薄膜電晶體
|
陳柏任;蔡宗叡;TSAI, JUNG-RUEY;吳國宏;劉國辰;鄭峻文;吳孟奇 |
| 亞洲大學 |
2013.06 |
利用氧電漿改善二氧化鉿特性應用於氧化銦鎵鋅薄膜電晶體
|
彭立儀;林文凱;吳國宏;蔡宗叡;TSAI, JUNG-RUEY;劉國辰 |
| 亞洲大學 |
2013-10 |
A Gate-All-Around Floating-Gate Memory Device with Triangular-Shaped Poly-Si Nanowire Channels
|
蔡宗叡;TSAI, JUNG-RUEY;李克慧;Lee, Ko-Hui Lee;林鴻志;Lin, Horng-Chih;黃調元;Huang, Tiao-Yuan |
| 亞洲大學 |
2013-10 |
A Gate-All-Around Floating-Gate Memory Device with Triangular-Shaped Poly-Si Nanowire Channels
|
蔡宗叡;TSAI, JUNG-RUEY;李克慧;Lee, Ko-Hui Lee;林鴻志;Lin, Horng-Chih;黃調元;Huang, Tiao-Yuan |
| 亞洲大學 |
2013-10 |
Low-voltage high-speed programming/erasing floating-gate memory device with gate-all-around polycrystalline silicon nanowire
|
Lee, Ko-Hui;李克慧;蔡宗叡;TSAI, JUNG-RUEY;張睿達;Chang, Ruey-Dar;林鴻志;Huang, Horng-Chih;黃調元;Tiao-Yuan, Huang |
| 亞洲大學 |
2012.10 |
Room temperature fabricated transparent IZO thin-film transistor with a high-k gate dielectric of LaAlO3 film
|
蔡宗叡;TSAI, JUNG-RUEY;林文凱;Lin, Wen-Kai |
| 亞洲大學 |
2012.07 |
Effects of Oxygen Pressure and Post-Deposition Annealing on the Characteristics of Pulsed Laser Deposited High-k Dielectric LaAlO3 Films on Indium Tin Oxide Films
|
蔡宗叡;TSAI, JUNG-RUEY;林文凱;Lin, Wen-Kai;馮文生;Feng, Wen-Sheng;劉國辰;Liu, Kou-Chen |
| 亞洲大學 |
2012-09 |
Failure Analysis of Power MOSFETs based on Multi-finger Configuration under Unclamped Inductive Switching (UIS) Stress Condition
|
楊紹明;Yang, Shao-Ming;蔡宗叡;Tsai, Jung-Ruey;許健;Sheu, Gene |
| 亞洲大學 |
2012-09 |
Shifting Time Waveform Induced CMOS Latch Up in Bootstrapping Technique Applications
|
蔡宗叡;Tsai, Jung-Ruey;許健;Sheu, Gene |
