| 亞洲大學 |
2013-10 |
Low-voltage high-speed programming/erasing floating-gate memory device with gate-all-around polycrystalline silicon nanowire
|
Lee, Ko-Hui;李克慧;蔡宗叡;TSAI, JUNG-RUEY;張睿達;Chang, Ruey-Dar;林鴻志;Huang, Horng-Chih;黃調元;Tiao-Yuan, Huang |
| 亞洲大學 |
2012.10 |
Room temperature fabricated transparent IZO thin-film transistor with a high-k gate dielectric of LaAlO3 film
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蔡宗叡;TSAI, JUNG-RUEY;林文凱;Lin, Wen-Kai |
| 亞洲大學 |
2012.07 |
Effects of Oxygen Pressure and Post-Deposition Annealing on the Characteristics of Pulsed Laser Deposited High-k Dielectric LaAlO3 Films on Indium Tin Oxide Films
|
蔡宗叡;TSAI, JUNG-RUEY;林文凱;Lin, Wen-Kai;馮文生;Feng, Wen-Sheng;劉國辰;Liu, Kou-Chen |
| 亞洲大學 |
2012-09 |
Failure Analysis of Power MOSFETs based on Multi-finger Configuration under Unclamped Inductive Switching (UIS) Stress Condition
|
楊紹明;Yang, Shao-Ming;蔡宗叡;Tsai, Jung-Ruey;許健;Sheu, Gene |
| 亞洲大學 |
2012-09 |
Shifting Time Waveform Induced CMOS Latch Up in Bootstrapping Technique Applications
|
蔡宗叡;Tsai, Jung-Ruey;許健;Sheu, Gene |
| 亞洲大學 |
2012-09 |
Analysis of LDMOS for Effect of Fingers, Device-Width and Inductance on reverse recovery
|
蔡宗叡;Tsai, Jung-Ruey;楊紹明;Yang, Shao-Ming;許健;Sheu, Gene |
| 亞洲大學 |
2012-08 |
Analysis of LDMOS for Effect of Finger and Device-width on Gate Feedback Charge
|
楊紹明;Yang, Shao-Ming;蔡宗叡;Tsai, Jung-Ruey;許健;Sheu, Gene |
| 亞洲大學 |
2012-03 |
A New Methodology to Investigate the Effect of Stress and Bias on 2DEG and Drain Current of AlGaN/GaN Based Heterostructure
|
許健;Sheu, Gene;蔡宗叡;Tsai, Jung-Ruey;楊紹明;Yang, Shao-Ming |
| 亞洲大學 |
2012-03 |
A New Methodology to Investigate the Effect of Stress and Bias on 2DEG and Drain Current of AlGaN-GaN Based Heterostructure
|
許健;Sheu, Gene;蔡宗叡;Tsai, Jung-Ruey;楊紹明;Yang, Shao-Ming |
| 亞洲大學 |
2012-03 |
Effect of finger and device-width on ruggedness of nLDMOS device under Single-pulse Unclamped Inductive Switching (UIS) conditions
|
蔡宗叡;Tsai, Jung-Ruey |
| 亞洲大學 |
2012-03 |
Optimization of nLDMOS ruggedness under Unclamped Inductive Switching (UIS) stress conditions by poly-gate extension
|
蔡宗叡;Tsai, Jung-Ruey;許健;Sheu, Gene;楊紹明;Yang, Shao-Ming |
| 亞洲大學 |
2012-03 |
Analysis of LDMOS for Effect of Fingers, Device-Width and Inductance (Load) on Reverse Recovery
|
蔡宗叡;Tsai, Jung-Ruey;楊紹明;Yang, Shao-Ming;許健;Sheu, Gene |
| 亞洲大學 |
2011-11 |
Design of Multiple RESURF LDMOS with P-top rings and STI regions in 65nm CMOS Technology
|
許健;Sheu, Gene;楊紹明;Yang, Shao-Ming;蔡宗叡;Tsai, Jung-Ruey |
| 亞洲大學 |
2011-11 |
Self-Consistent Electro-Thermo-Mechanical Analysis of AlN Passivation Effect on AlGaN/GaN HEMTs
|
許健;Sheu, Gene;蔡宗叡;Tsai, Jung-Ruey;楊紹明;Yang, Shao-Ming |
| 亞洲大學 |
2011-11 |
Development of ESD Robustness Enhancement of a Novel 800V LDMOS Multiple RESURF with Linear P-top Rings
|
蔡宗叡;Tsai, Jung-Ruey;許健;Sheu, Gene;楊紹明;Yang, Shao-Ming |
| 亞洲大學 |
2011-08 |
Improvement of Electrical Characteristics in LDMOS by the Insertion of PBL
|
許健;Sheu, Gene;蔡宗叡;Tsai, Jung-Ruey;楊紹明;Yang, Shao-Ming |
| 亞洲大學 |
2011-08 |
Improvement of Electrical Characteristics in LDMOS by the Insertion of PBL and Gate Extended Field Plate Technologies
|
許健;Sheu, Gene;蔡宗叡;Tsai, Jung-Ruey;楊紹明;Yang, Shao-Ming |
| 亞洲大學 |
2011-08 |
Application of Multi-Lateral Double Diffused Field Ring in Ultrahigh-Voltage Device MOS Transistor Design
|
楊紹明;Yang, Shao-Ming;許健;Sheu, Gene;蔡宗叡;Tsai, Jung-Ruey |
| 亞洲大學 |
2011-08 |
Effects of SiO2 passivation on AlGaN/GaN HEMT by self-consistent electro-thermal-mechanical simulation
|
楊紹明;Yang, Shao-Ming;許健;Sheu, Gene;蔡宗叡;Tsai, Jung-Ruey |
| 亞洲大學 |
2010-11 |
A 5V/200V SOI Device with a Vertically Linear Graded Drift Region
|
楊紹明;Yang, Shao-Ming;許健;Sheu, Gene;蔡宗叡;Tsai, Jung-Ruey |
