|
"tsai ming jinn"的相關文件
顯示項目 36-60 / 69 (共3頁)
<< < 1 2 3 > >>
每頁顯示[10|25|50]項目
| 國立交通大學 |
2014-12-08T15:20:48Z |
Investigating the improvement of resistive switching trends after post-forming negative bias stress treatment
|
Tseng, Hsueh-Chih; Chang, Ting-Chang; Huang, Jheng-Jie; Yang, Po-Chun; Chen, Yu-Ting; Jian, Fu-Yen; Sze, S. M.; Tsai, Ming-Jinn |
| 國立交通大學 |
2014-12-08T15:16:14Z |
A carbon nanotube field effect transistor with tunable conduction-type by electrostatic effects
|
Chen, Bae-Horng; Wei, Jeng-Hua; Lo, Po-Yuan; Wang, Hung-Hsiang; Lai, Ming-Jinn; Tsai, Ming-Jinn; Chao, Tien Sheng; Lin, Horng-Chih; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:16:00Z |
Prospect of cobalt-mix-tetraethoxysilane method on localized lateral growth of carbon nanotubes for both p- and n-type field effect transistors
|
Chen, Bae-Horng; Lin, Horng-Chih; Huang, Tiao-Yuan; Wei, Jeng-Hua; Hwang, Chien-Liang; Lo, Po-Yuan; Tsai, Ming-Jinn; Chao, Tien Sheng |
| 國立交通大學 |
2014-12-08T15:13:40Z |
A process for high yield and high performance carbon nanotube field effect transistors
|
Lee, Tseng-Chin; Tsui, Bing-Yue; Tzeng, Pei-Jer; Wang, Ching-Chiun; Tsai, Ming-Jinn |
| 國立交通大學 |
2014-12-08T15:12:57Z |
Cerium oxide nanocrystals for nonvolatile memory applications
|
Yang, Shao-Ming; Chien, Chao-Hsin; Huang, Jiun-Jia; Lei, Tan-Fu; Tsai, Ming-Jinn; Lee, Lurng-Shehng |
| 國立交通大學 |
2014-12-08T15:11:50Z |
Redox Reaction Switching Mechanism in RRAM Device With Pt/CoSiO(X)/TiN Structure
|
Syu, Yong-En; Chang, Ting-Chang; Tsai, Tsung-Ming; Hung, Ya-Chi; Chang, Kuan-Chang; Tsai, Ming-Jinn; Kao, Ming-Jer; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:10:28Z |
Trigate TiN Nanocrystal Memory with High-k Blocking Dielectric and High Work Function Gate Electrode
|
Lu, Chi-Pei; Tsui, Bing-Yue; Luo, Cheng-Kei; Lin, Cha-Hsin; Tzeng, Pei-Jer; Wang, Ching-Chiun; Tsai, Ming-Jinn |
| 國立交通大學 |
2014-12-08T15:06:41Z |
Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films
|
Chen, Min-Chen; Chang, Ting-Chang; Tsai, Chih-Tsung; Huang, Sheng-Yao; Chen, Shih-Ching; Hu, Chih-Wei; Sze, Simon M.; Tsai, Ming-Jinn |
| 國立交通大學 |
2014-12-08T15:04:54Z |
High charge storage characteristics of CeO2 nanocrystals for novolatile memory applications
|
Yang, Shao-Ming; Huang, Jiun-Jia; Chien, Chao-Hsin; Taeng, Pei-Jer; Lee, Lurng-Shehng; Tsai, Ming-Jinn; Lei, Tan-Fu |
| 國立成功大學 |
2014-09 |
Influence of Oxygen Concentration on Self-Compliance RRAM in Indium Oxide Film
|
Yang, Jyun-Bao; Chang, Ting-Chang; Huang, Jheng-Jie; Chen, Yu-Ting; Tseng, Hsueh-Chih; Chu, Ann-Kuo; Sze, Simon M.; Tsai, Ming-Jinn; Zheng, Jin-Cheng; Bao, Ding-Hua |
| 國立成功大學 |
2014-08 |
Nonlinear bidirectional selector without rare materials for stackable cross-bar bipolar memory applications
|
Lee, Min-Hung; Luo, Jun-Dao; Cheng, Chih-Ching; Huang, Jian-Shiou; Chueh, Yu-Lun; Chen, Chih-Wei; Wu, Tai-Yuan; Chen, Yu-Sheng; Lee, Heng-Yuan; Chen, Fred; Tsai, Ming-Jinn |
| 國立成功大學 |
2013-09-02 |
Low power consumption resistance random access memory with Pt/InOx/TiN structure
|
Yang, Jyun-Bao; Chang, Ting-Chang; Huang, Jheng-Jie; Chen, Yu-Ting; Tseng, Hsueh-Chih; Chu, Ann-Kuo; Sze, Simon M.; Tsai, Ming-Jinn |
| 國立成功大學 |
2013-07-22 |
Enhancement of the stability of resistive switching characteristics by conduction path reconstruction
|
Huang, Jheng-Jie; Chang, Ting-Chang; Yu, Chih-Cheng; Huang, Hui-Chun; Chen, Yu-Ting; Tseng, Hsueh-Chih; Yang, Jyun-Bao; Sze, Simon M.; Gan, Der-Shin; Chu, Ann-Kuo; Lin, Jian-Yang; Tsai, Ming-Jinn |
| 國立成功大學 |
2013-07 |
Impact of Electroforming Current on Self-Compliance Resistive Switching in an ITO/Gd:SiOx/TiN Structure
|
Tseng, Hsueh-Chih; Chang, Ting-Chang; Wu, Yi-Chun; Wu, Sei-Wei; Huang, Jheng-Jie; Chen, Yu-Ting; Yang, Jyun-Bao; Lin, Tzu-Ping; Sze, Simon. M.; Tsai, Ming-Jinn; Wang, Ying-Lang; Chu, Ann-Kuo |
| 國立成功大學 |
2013-02-01 |
Improvement of Resistive Switching Characteristics by Thermally Assisted Forming Process for SiO2-Based Structure
|
Chen, Yu-Ting; Chang, Ting-Chang; Yang, Po-Chun; Huang, Jheng-Jie; Tseng, Hsueh-Chih; Huang, Hui-Chun; Yang, Jyun-Bao; Chu, Ann-Kuo; Gan, Der-Shin; Tsai, Ming-Jinn; Sze, Simon M. |
| 國立成功大學 |
2013-02-01 |
Investigating bipolar resistive switching characteristics in filament type and interface type BON-based resistive switching memory
|
Tseng, Hsueh-Chih; Chang, Ting-Chang; Cheng, Kai-Hung; Huang, Jheng-Jie; Chen, Yu-Ting; Jian, Fu-Yen; Sze, Simon M.; Tsai, Ming-Jinn; Chu, Ann-Kuo; Wang, Ying-Lang |
| 國立成功大學 |
2013-01-15 |
The resistive switching characteristics in TaON films for nonvolatile memory applications
|
Chen, Min-Chen; Chang, Ting-Chang; Chiu, Yi-Chieh; Chen, Shih-Cheng; Huang, Sheng-Yao; Chang, Kuan-Chang; Tsai, Tsung-Ming; Yang, Kai-Hsiang; Sze, Simon M.; Tsai, Ming-Jinn |
| 國立成功大學 |
2013-01-15 |
Influence of forming process on resistance switching characteristics of In2O3/SiO2 bi-layer
|
Huang, Jheng-Jie; Chang, Ting-Chang; Yang, Po-Chun; Chen, Yu-Ting; Tseng, Hsueh-Chih; Yang, Jyun-Bao; Sze, Simon M.; Chu, Ann-Kuo; Tsai, Ming-Jinn |
| 國立成功大學 |
2013-01-15 |
Role of InGaOx resistive switching characteristics on the performances of resistance random access memory of Pt/IGO/TiN device
|
Yang, Jyun-Bao; Chang, Ting-Chang; Huang, Jheng-Jie; Chen, Yu-Ting; Yang, Po-Chun; Tseng, Hsueh-Chih; Chu, Ann-Kuo; Sze, Simon M.; Tsai, Ming-Jinn |
| 國立成功大學 |
2012-12 |
Bipolar Resistive RAM Characteristics Induced by Nickel Incorporated Into Silicon Oxide Dielectrics for IC Applications
|
Tsai, Tsung-Ming; Chang, Kuan-Chang; Chang, Ting-Chang; Syu, Yong-En; Chuang, Siang-Lan; Chang, Geng-Wei; Liu, Guan-Ru; Chen, Min-Chen; Huang, Hui-Chun; Liu, Shih-Kun; Tai, Ya-Hsiang; Gan, Der-Shin; Yang, Ya-Liang; Young, Tai-Fa; Tseng, Bae-Heng; Chen, Kai-Huang; Tsai, Ming-Jinn; Ye, Cong; Wang, Hao; Sze, Simon M. |
| 國立成功大學 |
2012-10 |
Influence of Oxygen Concentration on Resistance Switching Characteristics of Gallium Oxide
|
Huang, Jheng-Jie; Chang, Ting-Chang; Yang, Jyun-Bao; Chen, Shih-Ching; Yang, Po-Chun; Chen, Yu-Ting; Tseng, Hsueh-Chih; Sze, Simon M.; Chu, Ann-Kuo; Tsai, Ming-Jinn |
| 國立成功大學 |
2012-03 |
Asymmetric Carrier Conduction Mechanism by Tip Electric Field in WSiOX Resistance Switching Device
|
Syu, Yong-En; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Geng-Wei; Chang, Kuan-Chang; Lou, Jyun-Hao; Tai, Ya-Hsiang; Tsai, Ming-Jinn; Wang, Ying-Lang; Sze, Simon M. |
| 國立成功大學 |
2012-01-09 |
Silicon introduced effect on resistive switching characteristics of WOX thin films
|
Syu, Yong-En; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Geng-Wei; Chang, Kuan-Chang; Tai, Ya-Hsiang; Tsai, Ming-Jinn; Wang, Ying-Lang; Sze, Simon M. |
| 國立臺灣大學 |
2012 |
Formation polarity dependent improved resistive switching memory characteristics using nanoscale (1.3 nm) core-shell IrOx nano-dots
|
Banerjee, Writam; Maikap, Siddheswar; Lai, Chao-Sung; Chen, Yi-Yan; Tien, Ta-Chang; Lee, Heng-Yuan; Chen, Wei-Su; Chen, Frederick T.; Kao, Ming-Jer; Tsai, Ming-Jinn; Yang, Jer-Ren |
| 國立臺灣大學 |
2012 |
Resistive switching characteristics of multilayered (HfO2/Al2O3)(n) n=19 thin film
|
Tzeng, Wen-Hsien; Zhong, Chia-Wen; Liu, Kou-Chen; Chang, Kow-Ming; Lin, Horng-Chih; Chan, Yi-Chun; Kuo, Chun-Chih; Tsai, Feng-Yu; Tseng, Ming Hong; Chen, Pang-Shiu; Lee, Heng-Yuan; Chen, Frederick; Tsai, Ming-Jinn |
顯示項目 36-60 / 69 (共3頁)
<< < 1 2 3 > >>
每頁顯示[10|25|50]項目
|
