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Showing items 56-69 of 69 (3 Page(s) Totally)
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| 國立成功大學 |
2012-10 |
Influence of Oxygen Concentration on Resistance Switching Characteristics of Gallium Oxide
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Huang, Jheng-Jie; Chang, Ting-Chang; Yang, Jyun-Bao; Chen, Shih-Ching; Yang, Po-Chun; Chen, Yu-Ting; Tseng, Hsueh-Chih; Sze, Simon M.; Chu, Ann-Kuo; Tsai, Ming-Jinn |
| 國立成功大學 |
2012-03 |
Asymmetric Carrier Conduction Mechanism by Tip Electric Field in WSiOX Resistance Switching Device
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Syu, Yong-En; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Geng-Wei; Chang, Kuan-Chang; Lou, Jyun-Hao; Tai, Ya-Hsiang; Tsai, Ming-Jinn; Wang, Ying-Lang; Sze, Simon M. |
| 國立成功大學 |
2012-01-09 |
Silicon introduced effect on resistive switching characteristics of WOX thin films
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Syu, Yong-En; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Geng-Wei; Chang, Kuan-Chang; Tai, Ya-Hsiang; Tsai, Ming-Jinn; Wang, Ying-Lang; Sze, Simon M. |
| 國立臺灣大學 |
2012 |
Formation polarity dependent improved resistive switching memory characteristics using nanoscale (1.3 nm) core-shell IrOx nano-dots
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Banerjee, Writam; Maikap, Siddheswar; Lai, Chao-Sung; Chen, Yi-Yan; Tien, Ta-Chang; Lee, Heng-Yuan; Chen, Wei-Su; Chen, Frederick T.; Kao, Ming-Jer; Tsai, Ming-Jinn; Yang, Jer-Ren |
| 國立臺灣大學 |
2012 |
Resistive switching characteristics of multilayered (HfO2/Al2O3)(n) n=19 thin film
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Tzeng, Wen-Hsien; Zhong, Chia-Wen; Liu, Kou-Chen; Chang, Kow-Ming; Lin, Horng-Chih; Chan, Yi-Chun; Kuo, Chun-Chih; Tsai, Feng-Yu; Tseng, Ming Hong; Chen, Pang-Shiu; Lee, Heng-Yuan; Chen, Frederick; Tsai, Ming-Jinn |
| 臺大學術典藏 |
2012 |
Formation polarity dependent improved resistive switching memory characteristics using nanoscale (1.3 nm) core-shell IrOx nano-dots
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Yang, Jer-Ren et al.; Banerjee, Writam; Banerjee, Writam; Maikap, Siddheswar; Lai, Chao-Sung; Chen, Yi-Yan; Tien, Ta-Chang; Lee, Heng-Yuan; Chen, Wei-Su; Chen, Frederick T.; Kao, Ming-Jer; Tsai, Ming-Jinn; Yang, Jer-Ren |
| 臺大學術典藏 |
2012 |
Resistive switching characteristics of multilayered (HfO2/Al2O3)(n) n=19 thin film
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Tzeng, Wen-Hsien; Zhong, Chia-Wen; Liu, Kou-Chen; Chang, Kow-Ming; Lin, Horng-Chih; Chan, Yi-Chun; Kuo, Chun-Chih; Tsai, Feng-Yu; Tseng, Ming Hong; Chen, Pang-Shiu; Lee, Heng-Yuan; Chen, Frederick; Tsai, Ming-Jinn; Tzeng, Wen-Hsien; Tsai, Feng-Yu et al. |
| 國立彰化師範大學 |
2011-05 |
The Use of Ga16Sb84 Alloy for Electronic Hase-change Memory
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Chang, Chih-Chung; Chao, Chien-Tu; Wu, Jong-Ching; Yew, Tri-Rung; Tsai, Ming-Jinn; Chin, Tsung-Shune |
| 國立彰化師範大學 |
2007-12 |
Effect of Transient Annealing on Patterned CoFeB-based Magnetic Tunnel Junctions
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Wu, Kuo-Ming; Huang, Chao-Hsien; Lin, Shiao-Chi; Kao, Ming-Jer; Tsai, Ming-Jinn; Wu, Jong-Ching; Horng, Lance |
| 國立彰化師範大學 |
2007-03 |
Repair Effect on Patterned CoFeB-based Magnetic Tunneling Junction Using Rapid Thermal Annealing
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Wu, Kuo-Ming; Wang, Yung-Hung; Chen, Wei-Chuan; Yang, Shan-Yi; Shen, Kuei-Hung; Kao, Ming-Jer; Tsai, Ming-Jinn; Kuo, Cheng-Yi; Wu, Jong-Ching; Horng, Lance |
| 國立彰化師範大學 |
2007-03 |
Repair Effect on Patterned CoFeB-based Magnetic Tunneling Junction Using Rapid Thermal Annealing
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Wu, Kuo-Ming; Wang, Yung-Hung; Chen, Wei-Chuan; Yang, Shan-Yi; Shen, Kuei-Hung; Kao, Ming-Jer; Tsai, Ming-Jinn; Kuo, Cheng-Yi; Wu, Jong-Ching; Horng, Lance |
| 國立彰化師範大學 |
2007 |
Brief Rapid Thermal Treatment Effect on Patterned CoFeB-based Magnetic Tunneling Junctions
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Wu, Kuo-Ming; Huang, Chao-Hsien; Wang, Yung-Hung; Kao, Ming-Jer; Tsai, Ming-Jinn; Wu, Jong-Ching; Horng, Lance |
| 國立彰化師範大學 |
2007 |
Brief Rapid Thermal Treatment Effect on Patterned CoFeB-based Magnetic Tunneling Junctions
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Wu, Kuo-Ming; Huang, Chao-Hsien; Wang, Yung-Hung; Kao, Ming-Jer; Tsai, Ming-Jinn; Wu, Jong-Ching; Horng, Lance |
| 國立臺灣大學 |
2004 |
High-k Al2O3 gate dielectrics prepared by oxidation of aluminum film in nitric acid followed by high-temperature annealing
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Kuo, Chih-Sheng; Hsu, Jui-Feng; Huang, Szu-Wei; Lee, Lurng-Shehng; Tsai, Ming-Jinn; Hwu, Jenn-Gwo |
Showing items 56-69 of 69 (3 Page(s) Totally)
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