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Institution Date Title Author
國立交通大學 2014-12-08T15:46:08Z Nitric acid-based slurry with citric acid as an inhibitor for copper chemical mechanical polishing Hu, TC; Chiu, SY; Dai, BT; Tsai, MS; Tung, IC; Feng, MS
國立交通大學 2014-12-08T15:46:05Z The novel precleaning treatment for selective tungsten chemical vapor deposition Chang, TC; Mor, YS; Liu, PT; Sze, SM; Yang, YL; Tsai, MS; Chang, CY
國立交通大學 2014-12-08T15:45:36Z Effect of bottom electrodes on resistance degradation and breakdown of (Ba, Sr)TiO3 thin films Tsai, MS; Tseng, TY
國立交通大學 2014-12-08T15:45:19Z Retardation in the chemical-mechanical polish of the boron-doped polysilicon and silicon Yang, WL; Cheng, CY; Tsai, MS; Liu, DG; Shieh, MS
國立交通大學 2014-12-08T15:45:16Z Dielectric relaxation and defect analysis of Ta2O5 thin films Ezhilvalavan, S; Tsai, MS; Tseng, TY
國立交通大學 2014-12-08T15:45:06Z Novel cleaning solutions for polysilicon film post chemical mechanical polishing Pan, TM; Lei, TF; Chen, CC; Chao, TS; Liaw, MC; Yang, WL; Tsai, MS; Lu, CP; Chang, WH
國立交通大學 2014-12-08T15:44:55Z The effect of oxygen-to-argon ratio on the electrical and reliability characteristics of sputtered Sr0.8Bi2.5Ta1.2Nb0.9O9+x thin films Tsai, MS; Tseng, TY
國立交通大學 2014-12-08T15:44:42Z Improvement of post-chemical mechanical planarization characteristics on organic low k methylsilsesquioxane as intermetal dielectric Liu, PT; Chang, TC; Huang, MC; Yang, YL; Mor, YS; Tsai, MS; Chung, H; Hou, J; Sze, SM
國立交通大學 2014-12-08T15:43:55Z Elimination of dielectric degradation for chemical-mechanical planarization of low-k hydrogen silisesquioxane Chang, TC; Liu, PT; Tsai, TM; Yeh, FS; Tseng, TY; Tsai, MS; Chen, BC; Yang, YL; Sze, SM
國立交通大學 2014-12-08T15:43:42Z Highly reliable chemical-mechanical polishing process for organic low-k methylsilsesquioxane Liu, PT; Chang, TC; Huang, MC; Tsai, MS; Sze, SM

Showing items 46-55 of 100  (10 Page(s) Totally)
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