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Showing items 11-20 of 36 (4 Page(s) Totally)
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| 國家衛生研究院 |
2016-12-15 |
Fine-mapping of lipid regions in global populations discovers ethnic-specific signals and refines previously identified lipid loci
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Zubair, N;Graff, M;Ambite, JL;Bush, WS;Kichaev, G;Lu, Y;Manichaikul, A;Sheu, WHH;Absher, D;Assimes, TL;Bielinski, SJ;Bottinger, EP;Buzkova, P;Chuang, LM;Chung, RH;Cochran, B;Dumitrescu, L;Gottesman, O;Haessler, JW;Haiman, C;Heiss, G;Hsiung, CA;Hung, YJ;Hwu, CM;Juang, JmJ;Marchand, LL;Lee, IT;Lee, WJ;Lin, LA;Lin, D;Lin, SY;Mackey, RH;Martin, LW;Pasaniuc, B;Peters, U;Predazzi, I;Quertermous, T;Reiner, AP;Robinson, J;Rotter, JI;Ryckman, KK;Schreiner, PJ;Stahl, E;Tao, R;Tsai, MY;Waite, LL;Wang, TD;Buyske, S;Chen, YDI;Cheng, I;Crawford, DC;Loos, RJF;Rich, SS;Fornage, M;North, KE;Kooperberg, C;Carty, CL |
| 國家衛生研究院 |
2014-12-09 |
Gadoxetic acid-enhanced MRI and sonoelastography: Non-invasive assessments of chemoprevention of liver fibrosis in thioacetamide-induced rats with Sho-Saiko-To
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Chen, YW;Tsai, MY;Pan, HB;Tseng, HH;Hung, YT;Chou, CP |
| 國立交通大學 |
2014-12-08T15:43:41Z |
Post-soft-breakdown characteristics of deep submicron NMOSFETs with ultrathin gate oxide
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Tsai, MY; Lin, HC; Lee, DY; Huang, TY |
| 國立交通大學 |
2014-12-08T15:42:37Z |
Enhanced negative-bias-temperature instability of P-channel metal-oxide-semiconductor transistors due to plasma charging damage
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Lee, DY; Lin, HC; Wang, MF; Tsai, MY; Huang, TY; Wang, TH |
| 國立交通大學 |
2014-12-08T15:37:10Z |
MOCVD growth of highly strained InGaAs : Sb-GaAs-GaAsP quantum well vertical cavity surface-emitting lasers with 1.27 mu m emission
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Kuo, HC; Yao, HH; Chang, YH; Chang, YA; Tsai, MY; Hsieh, J; Chang, EY; Wang, SC |
| 國立交通大學 |
2014-12-08T15:26:55Z |
The design of automatic-lock-automatic-retrieve single-chip IPM for converter systems
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Chang, LK; Tsai, MY |
| 國立交通大學 |
2014-12-08T15:25:54Z |
Advanced handoff controls in third generation CDMA wireless systems
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Huang, CY; Tsai, MY; Huang, J |
| 國立交通大學 |
2014-12-08T15:19:39Z |
High-speed modulation of InGaAs : Sb-GaAs-GaAsP quantum-well vertical-cavity surface-emitting lasers with 1.27-mu m emission wavelength
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Kuo, HC; Chang, YH; Yao, HH; Chang, YA; Lai, FI; Tsai, MY; Wang, SC |
| 國立交通大學 |
2014-12-08T15:19:23Z |
10 Gbps InGaAs : Sb-G-aAs-GaAsP quantum well vertical cavity surface emitting lasers with 1.27 mu m emission wavelengths
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Chang, YH; Kuo, HC; Chang, YA; Chu, JT; Tsai, MY; Wang, SC |
| 國立交通大學 |
2014-12-08T15:18:41Z |
Temperature-dependent photoluminescence of highly strained InGaAsN/GaAs quantum wells (lambda=1.28-1.45 mu m) with GaAsP strain-compensated layers
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Lai, FI; Kuo, HC; Chang, YH; Tsai, MY; Chu, CP; Kuo, SY; Wang, SC; Tansu, N; Yeh, JY; Mawst, LJ |
Showing items 11-20 of 36 (4 Page(s) Totally)
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