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Taiwan Academic Institutional Repository >
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"tsai tsung ling"
Showing items 11-16 of 16 (1 Page(s) Totally)
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| 國立交通大學 |
2015-07-21T08:29:17Z |
Unipolar resistive switching behaviors and mechanisms in an annealed Ni/ZrO2/TaN memory device
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Tsai, Tsung-Ling; Ho, Tsung-Han; Tseng, Tseung-Yuen |
| 國立交通大學 |
2015-07-21T08:28:49Z |
Room-temperature fabricated, fully transparent resistive memory based on ITO/CeO2/ITO structure for RRAM applications
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Ismail, Muhammad; Rana, Anwar Manzoor; Talib, Ijaz; Tsai, Tsung-Ling; Chand, Umesh; Ahmed, Ejaz; Nadeem, Muhammad Younus; Aziz, Abdul; Shah, Nazar Abbas; Hussain, Muhammad |
| 國立交通大學 |
2014-12-08T15:36:20Z |
Resistive switching characteristics of Pt/CeOx/TiN memory device
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Ismail, Muhammad; Talib, Ijaz; Huang, Chun-Yang; Hung, Chung-Jung; Tsai, Tsung-Ling; Jieng, Jheng-Hong; Chand, Umesh; Lin, Chun-An; Ahmed, Ejaz; Rana, Anwar Manzoor; Nadeem, Muhammad Younus; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:35:07Z |
Forming-free bipolar resistive switching in nonstoichiometric ceria films
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Ismail, Muhammad; Huang, Chun-Yang; Panda, Debashis; Hung, Chung-Jung; Tsai, Tsung-Ling; Jieng, Jheng-Hong; Lin, Chun-An; Chand, Umesh; Rana, Anwar Manzoor; Ahmed, Ejaz; Talib, Ijaz; Nadeem, Muhammad Younus; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:34:59Z |
Switching mechanism of double forming process phenomenon in ZrOx/HfOy bilayer resistive switching memory structure with large endurance
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Huang, Chun-Yang; Huang, Chung-Yu; Tsai, Tsung-Ling; Lin, Chun-An; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:31:10Z |
Unipolar resistive switching behavior in Pt/HfO2/TiN device with inserting ZrO2 layer and its 1 diode-1 resistor characteristics
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Lee, Dai-Ying; Tsai, Tsung-Ling; Tseng, Tseung-Yuen |
Showing items 11-16 of 16 (1 Page(s) Totally)
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