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"tsai tsung ling"的相关文件
显示项目 1-10 / 16 (共2页)
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| 國立交通大學 |
2018-08-21T05:52:48Z |
Effect of barrier layer on switching polarity of ZrO2-based conducting-bridge random access memory
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Chandrasekaran, Sridhar; Simanjuntak, Firman Mangasa; Tsai, Tsung-Ling; Lin, Chun-An; Tseng, Tseung-Yuen |
| 國立交通大學 |
2018-01-24T07:38:57Z |
氧化鋯電阻式記憶體元件之熱相關研究
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蔡宗霖; 曾俊元; Tsai, Tsung-Ling |
| 國立交通大學 |
2017-04-21T06:56:40Z |
Enhanced Properties in Conductive-Bridge Resistive Switching Memory With Oxide-Nitride Bilayer Structure
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Tsai, Tsung-Ling; Jiang, Fa-Shen; Ho, Chia-Hua; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立交通大學 |
2017-04-21T06:55:41Z |
A high performance transparent resistive switching memory made from ZrO2/AlON bilayer structure
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Tsai, Tsung-Ling; Chang, Hsiang-Yu; Lou, Jesse Jen-Chung; Tseng, Tseung-Yuen |
| 國立交通大學 |
2017-04-21T06:55:13Z |
Impacts of Co doping on ZnO transparent switching memory device characteristics
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Simanjuntak, Firman Mangasa; Prasad, Om Kumar; Panda, Debashis; Lin, Chun-An; Tsai, Tsung-Ling; Wei, Kung-Hwa; Tseng, Tseung-Yuen |
| 國立交通大學 |
2015-12-02T02:59:35Z |
Impact of Post-Oxide Deposition Annealing on Resistive Switching in HfO2-Based Oxide RRAM and Conductive-Bridge RAM Devices
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Tsai, Tsung-Ling; Chang, Hsiang-Yu; Jiang, Fa-Shen; Tseng, Tseung-Yuen |
| 國立交通大學 |
2015-12-02T02:59:22Z |
Enhancing the memory window of AZO/ZnO/ITO transparent resistive switching devices by modulating the oxygen vacancy concentration of the top electrode
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Simanjuntak, Firman Mangasa; Panda, Debashis; Tsai, Tsung-Ling; Lin, Chun-An; Wei, Kung-Hwa; Tseng, Tseung-Yuen |
| 國立交通大學 |
2015-12-02T02:59:18Z |
Enhanced switching uniformity in AZO/ZnO1-x/ITO transparent resistive memory devices by bipolar double forming
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Simanjuntak, Firman Mangasa; Panda, Debashis; Tsai, Tsung-Ling; Lin, Chun-An; Wei, Kung-Hwa; Tseng, Tseung-Yuen |
| 國立交通大學 |
2015-12-02T02:59:09Z |
Resistive Switching Characteristics of WO3/ZrO2 Structure With Forming-Free, Self-Compliance, and Submicroampere Current Operation
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Tsai, Tsung-Ling; Lin, Yu-Hsuan; Tseng, Tseung-Yuen |
| 國立交通大學 |
2015-07-21T08:31:27Z |
Resistive Switching and Rectification Characteristics with CoO/ZrO2 Double Layers
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Tsai, Tsung-Ling; Wu, Jia-Woei; Tseng, Tseng-Yuen |
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