|
|
Taiwan Academic Institutional Repository >
Browse by Author
|
"tsai tsung ming"
Showing items 1-25 of 144 (6 Page(s) Totally)
1 2 3 4 5 6 > >>
View [10|25|50] records per page
| 國立交通大學 |
2020-10-05T02:02:01Z |
Interface Defect Shielding of Electron Trapping in a-InGaZnO Thin Film Transistors
|
Lin, Chih-Chih; Tai, Mao-Chou; Chang, Ting-Chang; Tsao, Yu-Ching; Wang, Yu-Xuan; Tsai, Yu-Lin; Tu, Hong-Yi; Lu, I-Nien; Tsai, Tsung-Ming; Huang, Jen-Wei |
| 國立交通大學 |
2020-09-30 |
Abnormal hysteresis formation in hump region after positive gate bias stress in low-temperature poly-silicon thin film transistors
|
Tu, Hong-Yi; Chang, Ting-Chang; Tsao, Yu-Ching; Tai, Mao-Chou; Tsai, Yu-Lin; Huang, Shin-Ping; Zheng, Yu-Zhe; Wang, Yu-Xuan; Lin, Chih-Chih; Kuo, Chuan-Wei; Tsai, Tsung-Ming; Wu, Chia-Chuan; Chien, Ya-Ting; Huang, Hui-Chun |
| 國立交通大學 |
2020-07-01T05:21:14Z |
Enhancement of Mechanical Bending Stress Endurance Using an Organic Trench Structure in Foldable Polycrystalline Silicon TFTs
|
Zheng, Yu-Zhe; Huang, Shin-Ping; Chen, Po-Hsun; Chang, Ting-Chang; Tsai, Tsung-Ming; Chu, Ann-Kuo; Hung, Yang-Hao; Shih, Yu-Shan; Wang, Yu-Xuan; Wu, Chia-Chuan; Tu, Yu-Fa; Chen, Yu-An; Sun, Pei-Jun; Chung, Yu-Hua; Chen, Wei-Han; Wang, Tai-Jui |
| 國立交通大學 |
2020-03-01 |
Improvement of Resistive Switching Characteristics in Zinc Oxide-Based Resistive Random Access Memory by Ammoniation Annealing
|
Sze, Simon M.; Tsai, Tsung-Ming; Huang, Hui-Chun; Ma, Xiao-Hua; Hao, Yue; Tan, Yung-Fang; Chen, Wen-Chung; Tai, Mao-Chou; Yang, Chih-Cheng; Chen, Wei-Jang; Chang, Ting-Chang; Wu, Pei-Yu; Zheng, Hao-Xuan; Shih, Chih-Cheng |
| 國立交通大學 |
2019-12-13T01:12:24Z |
Analysis of Negative Bias Temperature Instability Degradation in p-Type Low-Temperature Polycrystalline Silicon Thin-Film Transistors of Different Grain Sizes
|
Tu, Hong-Yi; Tsao, Yu-Ching; Tai, Mao-Chou; Chang, Ting-Chang; Tsai, Yu-Lin; Huang, Shin-Ping; Zheng, Yu-Zhe; Wang, Yu-Xuan; Chen, Hong-Chih; Tsai, Tsung-Ming; Wu, Chia-Chuan |
| 國立交通大學 |
2019-09-02T07:46:14Z |
Indium Diffusion Behavior and Application in HfO2-Based Conductive Bridge Random Access Memory
|
Zheng, Hao-Xuan; Shih, Chih-Cheng; Chang, Ting-Chang; Shih, Lin-Yi; Shih, Yao-Kai; Tseng, Yi-Ting; Chen, Wen-Chung; Huang, Wei-Chen; Yang, Chih-Cheng; Wu, Pei-Yu; Huang, Hui-Chun; Tsai, Tsung-Ming; Sze, Simon M. |
| 國立交通大學 |
2019-09-02T07:46:10Z |
A Dual-Gate InGaZnO4-Based Thin-Film Transistor for High-Sensitivity UV Detection
|
Chen, Po-Hsun; Tsao, Yu-Ching; Chien, Yu-Chieh; Chiang, Hsiao-Cheng; Chen, Hua-Mao; Lu, Ying-Hsin; Shih, Chih-Cheng; Tai, Mao-Chou; Chen, Guan-Fu; Tsai, Yu-Lin; Huang, Hui-Chun; Tsai, Tsung-Ming; Chang, Ting-Chang |
| 國立交通大學 |
2019-08-02T02:18:32Z |
Investigating Material Changes at Different Gadolinium Doping Power Levels in Indium-Tin Oxide Intended for Use as an Insulator in Resistive Switching Memory
|
Lin, Chun-Chu; Chen, Po-Hsun; Chen, Min-Chen; Chang, Ting-Chang; Lin, Chih-Yang; Zheng, Hao-Xuan; Chen, Chun-Kuei; Huang, Wei-Chen; Chen, Wen-Chung; Huang, Hui-Chun; Tsai, Tsung-Ming; Ma, Xiao-Hua; Hao, Yue; Sze, Simon M. |
| 國立交通大學 |
2019-04-03T06:44:32Z |
Improvement of Bipolar Switching Properties of Gd:SiOx RRAM Devices on Indium Tin Oxide Electrode by Low-Temperature Supercritical CO2 Treatment
|
Chen, Kai-Huang; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Liang, Shu-Ping; Young, Tai-Fa; Syu, Yong-En; Sze, Simon M. |
| 國立交通大學 |
2019-04-03T06:42:27Z |
Illumination Effect on Bipolar Switching Properties of Gd:SiO2 RRAM Devices Using Transparent Indium Tin Oxide Electrode
|
Chen, Kai-Huang; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Liang, Shu-Ping; Young, Tai-Fa; Syu, Yong-En; Sze, Simon M. |
| 國立交通大學 |
2019-04-02T06:00:29Z |
The influence of temperature on set voltage for different high resistance state in 1T1R devices
|
Tan, Yung-Fang; Su, Yu-Ting; Chen, Min-Chen; Chang, Ting-Chang; Tsai, Tsung-Ming; Tseng, Yi-Ting; Yang, Chih-Cheng; Zheng, Hao-Xuan; Chen, Wen-Chung; Lin, Chun-Chu; Ma, Xiao-Hua; Hao, Yue; Sze, Simon M. |
| 國立交通大學 |
2019-04-02T05:59:51Z |
Redox Reaction Switching Mechanism in RRAM Device With Pt/CoSiOX/TiN Structure
|
Syu, Yong-En; Chang, Ting-Chang; Tsai, Tsung-Ming; Hung, Ya-Chi; Chang, Kuan-Chang; Tsai, Ming-Jinn; Kao, Ming-Jer; Sze, Simon M. |
| 國立交通大學 |
2019-04-02T05:59:36Z |
Analyzing Electric Field Effect by Applying an Ultra-Short Time Pulse Condition in Hafnium Oxide-Based RRAM
|
Wu, Cheng-Hsien; Lin, Shih-Kai; Pan, Chih-Hung; Chen, Po-Hsun; Lin, Wen-Yan; Chang, Ting-Chang; Tsai, Tsung-Ming; Xu, You-Lin; Shih, Chih-Cheng; Lin, Yu-Shuo; Chen, Wen-Chung; Wang, Ming-Hui; Zhang, Sheng-Dong; Sze, Simon M. |
| 國立交通大學 |
2019-04-02T05:59:26Z |
Enhancement of Surface Chemical and Physical Properties of Germanium-Sulfur Thin Film Using a Water-Supplemented Carbon Dioxide Supercritical Fluid Treatment Technique
|
Yang, Chih-Cheng; Chen, Po-Hsun; Shih, Chih-Cheng; Wang, Ming-Hui; Tsai, Tsung-Ming; Zheng, Hao-Xuan; Chen, Wen-Chung; Chen, Min-Chen; Huang, Hui-Chun; Ma, Xiao-Hua; Hao, Yue; Huang, Jen-Wei; Sze, Simon M.; Chang, Ting-Chang |
| 國立交通大學 |
2019-04-02T05:59:03Z |
Improving Resistance Switching Characteristics with SiGeOx/SiGeON Double Layer for Nonvolatile Memory Applications
|
Syu, Yong-En; Chang, Ting-Chang; Tsai, Chih-Tsung; Chang, Geng-Wei; Tsai, Tsung-Ming; Chang, Kuan-Chang; Tai, Ya-Hsiang; Tsai, Ming-Jinn; Sze, Simon M. |
| 國立交通大學 |
2019-04-02T05:57:55Z |
Reducing operation current of Ni-doped silicon oxide resistance random access memory by supercritical CO2 fluid treatment
|
Chang, Kuan-Chang; Tsai, Tsung-Ming; Chang, Ting-Chang; Syu, Yong-En; Wang, Chia-C.; Chuang, Siang-Lan; Li, Cheng-Hua; Gan, Der-Shin; Sze, Simon M. |
| 國立交通大學 |
2019-04-02T05:57:52Z |
Silicon introduced effect on resistive switching characteristics of WOX thin films
|
Syu, Yong-En; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Geng-Wei; Chang, Kuan-Chang; Tai, Ya-Hsiang; Tsai, Ming-Jinn; Wang, Ying-Lang; Sze, Simon M. |
| 國立交通大學 |
2018-08-21T05:56:52Z |
A Universal Model for Interface-type Threshold Switching Phenomena by Comprehensive Study of Vanadium Oxide-Based Selector
|
Lin, Chih-Yang; Chen, Ying-Chen; Gu, Meiqi; Pan, Chih-Hung; Jin, Fu-Yuan; Tseng, Yi-Ting; Hsieh, Cheng Chih; Wu, Xiaohan; Chen, Min-Chen; Chang, Yao-Feng; Zhou, Fei; Fowler, Burt; Chang, Kuan-Chang; Tsai, Tsung-Ming; Chang, Ting-Chang; Zhao, Yonggang; Sze, Simon M.; Banetjee, Sanjay; Lee, Jack C. |
| 國立交通大學 |
2018-08-21T05:54:30Z |
Inert Pt electrode switching mechanism after controlled polarity-forming process in In2O3-based resistive random access memory
|
Wu, Cheng-Hsien; Pan, Chih-Hung; Chen, Po-Hsun; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Shih, Chih-Cheng; Chi, Ting-Yang; Chu, Tian-Jian; Wu, Jia-Ji; Du, Xiaoqin; Zheng, Hao-Xuan; Sze, Simon M. |
| 國立交通大學 |
2018-08-21T05:54:16Z |
Attaining resistive switching characteristics and selector properties by varying forming polarities in a single HfO2-based RRAM device with a vanadium electrode
|
Lin, Chih-Yang; Chen, Po-Hsun; Chang, Ting-Chang; Chang, Kuan-Chang; Zhang, Sheng-Dong; Tsai, Tsung-Ming; Pan, Chih-Hung; Chen, Min-Chen; Su, Yu-Ting; Tseng, Yi-Ting; Chang, Yao-Feng; Chen, Ying-Chen; Huang, Hui-Chun; Sze, Simon M. |
| 國立交通大學 |
2018-08-21T05:53:58Z |
The effect of asymmetrical electrode form after negative bias illuminated stress in amorphous IGZO thin film transistors (vol 110, 103502, 2017)
|
Su, Wan-Ching; Chang, Ting-Chang; Liao, Po-Yung; Chen, Yu-Jia; Chen, Bo-Wei; Hsieh, Tien-Yu; Yang, Chung-I; Huang, Yen-Yu; Chang, Hsi-Ming; Chiang, Shin-Chuan; Chang, Kuan-Chang; Tsai, Tsung-Ming |
| 國立交通大學 |
2018-08-21T05:53:56Z |
Effect of charge quantity on conduction mechanism of high-and low-resistance states during forming process in a one-transistor-one-resistor resistance random access memory
|
Wu, Cheng-Hsien; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Chu, Tian-Jian; Pan, Chih-Hung; Su, Yu-Ting; Chen, Po-Hsun; Lin, Shih-Kai; Hu, Shih-Jie; Sze, Simon M. |
| 國立交通大學 |
2018-08-21T05:53:55Z |
Role of H2O Molecules in Passivation Layer of a-InGaZnO Thin Film Transistors
|
Chien, Yu-Chieh; Chang, Ting-Chang; Chiang, Hsiao-Cheng; Chen, Hua-Mao; Tsao, Yu-Ching; Shih, Chih-Cheng; Chen, Bo-Wei; Liao, Po-Yung; Chu, Ting-Yang; Yang, Yi-Chieh; Hung, Yu-Ju; Tsai, Tsung-Ming; Chang, Kuan-Chang |
| 國立交通大學 |
2018-08-21T05:53:53Z |
The effect of asymmetrical electrode form after negative bias illuminated stress in amorphous IGZO thin film transistors
|
Su, Wan-Ching; Chang, Ting-Chang; Liao, Po-Yung; Chen, Yu-Jia; Chen, Bo-Wei; Hsieh, Tien-Yu; Yang, Chung-I; Huang, Yen-Yu; Chang, Hsi-Ming; Chiang, Shin-Chuan; Chang, Kuan-Chang; Tsai, Tsung-Ming |
| 國立交通大學 |
2018-08-21T05:53:52Z |
Performance improvement after nitridation treatment in HfO2-based resistance random-access memory
|
Wang, Ming-Hui; Chang, Ting-Chang; Shih, Chih-Cheng; Tseng, Yi-Ting; Tsai, Tsung-Ming; Zheng, Hao-Xuan; Wu, Pei-Yu; Huang, Hui-Chun; Chen, Wen-Chung; Huang, Jen-Wei; Ma, Xiao-Hua; Hao, Yue; Sze, Simon M. |
Showing items 1-25 of 144 (6 Page(s) Totally)
1 2 3 4 5 6 > >>
View [10|25|50] records per page
|
