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Showing items 46-70 of 96 (4 Page(s) Totally)
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Institution	Date	Title	Author
臺大學術典藏	2020-01-06T03:11:18Z	Stem-Cell Responses to Surface Nanotopographies	Wang, P.; Tsai, W.; WEI-BOR TSAI
臺大學術典藏	2019-12-27T07:49:43Z	Ga2 O3 (Gd2 O3) Si3 N4 dual-layer gate dielectric for InGaAs enhancement mode metal-oxide-semiconductor field-effect transistor with channel inversion	Zheng, J.F.; Tsai, W.; Lin, T.D.; Lee, Y.J.; Chen, C.P.; Hong, M.; Kwo, J.; Cui, S.; Ma, T.P.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:42Z	1 nm equivalent oxide thickness in Ga2 O3 (Gd2 O3) In0.2 Ga0.8 As metal-oxide-semiconductor capacitors	Shiu, K.H.;Chiang, T.H.;Chang, P.;Tung, L.T.;Hong, M.;Kwo, J.;Tsai, W.; Shiu, K.H.; Chiang, T.H.; Chang, P.; Tung, L.T.; Hong, M.; Kwo, J.; Tsai, W.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:41Z	Oxide scalability in Al2 O3 Ga2 O3 (Gd2 O3) In0.20 Ga0.80 AsGaAs heterostructures	Shiu, K.H.; Chiang, C.H.; Lee, Y.J.; Lee, W.C.; Chang, P.; Tung, L.T.; Hong, M.; Kwo, J.; Tsai, W.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:40Z	High-performance self-aligned inversion-channel In0.53 Ga0.47 As metal-oxide-semiconductor field-effect-transistor with Al2 O3 Ga2 O3 (Gd2 O3) as gate dielectrics	Lin, T.D.;Chiu, H.C.;Chang, P.;Tung, L.T.;Chen, C.P.;Hong, M.;Kwo, J.;Tsai, W.;Wang, Y.C.; Lin, T.D.; Chiu, H.C.; Chang, P.; Tung, L.T.; Chen, C.P.; Hong, M.; Kwo, J.; Tsai, W.; Wang, Y.C.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:39Z	Self-aligned inversion-channel and D-mode InGaAs MOSFET using Al 2O3/Ga2O3(Gd2O3) as gate dielectrics	MINGHWEI HONG;Tsai, W.;Kwo, J.;Hong, M.;Lin, C.A.;Chang, P.;Chiu, H.C.;Chen, C.P.;Lin, T.D.; Lin, T.D.; Chen, C.P.; Chiu, H.C.; Chang, P.; Lin, C.A.; Hong, M.; Kwo, J.; Tsai, W.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:39Z	Approaching fermi level unpinning in oxide-ino.2gao.8as	MINGHWEI HONG;Hong, M.;Tsai, W.;Wang, W.E.;Kwo, J.;Shiu, K.H.;Lin, D.;Lin, T.D.;Lee, W.C.;Chiang, T.H.; Chiang, T.H.; Lee, W.C.; Lin, T.D.; Lin, D.; Shiu, K.H.; Kwo, J.; Wang, W.E.; Tsai, W.; Hong, M.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:36Z	Self-aligned inversion channel In0.53Ga0.47As N-MOSFETs with ALD-Al2O3and MBE-Al2O3/Ga2O3(Gd2O3) as gate dielectrics	Chiu, H.C.;Lin, T.D.;Chang, P.;Lee, W.C.;Chiang, C.H.;Kwo, J.;Lin, Y.S.;Hsu, S.S.H.;Tsai, W.;Hong, M.; Chiu, H.C.; Lin, T.D.; Chang, P.; Lee, W.C.; Chiang, C.H.; Kwo, J.; Lin, Y.S.; Hsu, S.S.H.; Tsai, W.; Hong, M.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:35Z	InGaAs MOSCAPs and self-aligned inversion-channel MOSFETs with Al 2O3/Ga2O3(Gd2O 3) as a gate dielectric	Lin, T.D.;Chiu, H.C.;Chang, P.;Lee, W.C.;Chinag, T.H.;Kwo, J.;Tsai, W.;Hong, M.; Lin, T.D.; Chiu, H.C.; Chang, P.; Lee, W.C.; Chinag, T.H.; Kwo, J.; Tsai, W.; Hong, M.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:35Z	Self-aligned inversion-channel In0.75Ga0.25As MOSFETs using MBE-Al2O3/Ga2O3(Gd 2O3) and ALD-Al2O3 as gate dielectrics	Lin, T.D.;Chiu, H.C.;Chang, P.;Chang, Y.H.;Lin, C.A.;Chang, W.H.;Kwo, J.;Tsai, W.;Hong, M.; Lin, T.D.; Chiu, H.C.; Chang, P.; Chang, Y.H.; Lin, C.A.; Chang, W.H.; Kwo, J.; Tsai, W.; Hong, M.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:34Z	Achieving nearly free fermi-level movement and Vthengineering in Ga2O3(Gd2O3)/In0.2Ga0.8As	Lin, T.D.;Wu, Y.D.;Chang, Y.C.;Chiang, T.H.;Chuang, C.Y.;Lin, C.A.;Chang, W.H.;Chiu, H.C.;Tsai, W.;Kwo, J.;Hong, M.; Lin, T.D.; Wu, Y.D.; Chang, Y.C.; Chiang, T.H.; Chuang, C.Y.; Lin, C.A.; Chang, W.H.; Chiu, H.C.; Tsai, W.; Kwo, J.; Hong, M.; MINGHWEI HONG
臺大學術典藏	2019-12-25T04:04:20Z	Effect of Puberty Onset on Spontaneous Hepatitis B Virus e Antigen Seroconversion in Men	Wu J.;Tsai W.;Hong-Yuan Hsu;Ni Y.;Chen H.;Tsuei D.;Chang M.; Wu J.; Tsai W.; HONG-YUAN HSU; Ni Y.; Chen H.; Tsuei D.; Chang M.
國家衛生研究院	2019-07	Haplotypes constructed by Whole exome sequencing to map and identify a novel disease-causing RP2 gene variant from a recessive X linked Retinities Pigmentosa family	Ching, Y;Fan, W;Lin, W;Tsai, W;Hu, L;Huang, S;Chung, R
國家衛生研究院	2019-07	In vitro functional analysis of a novel RP2 alleles	Kao, Y;Fan, W;Chung, R;Lin, W;Tsai, W;Hu, L;Huang, S;Ching, Y
臺大學術典藏	2018-09-10T07:34:14Z	Self-aligned inversion channel In 0.53 Ga 0.47 As n-MOSFETs with ALD-Al 2 O 3 and MBE-Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) as gate dielectrics	Chiu, HC;Lin, TD;Chang, P;Lee, WC;Chiang, CH;Kwo, J;Lin, YS;Hsu, Shawn SH;Tsai, W;Hong, M; Chiu, HC; Lin, TD; Chang, P; Lee, WC; Chiang, CH; Kwo, J; Lin, YS; Hsu, Shawn SH; Tsai, W; Hong, M; MINGHWEI HONG
臺大學術典藏	2018-09-10T07:34:13Z	InGaAs MOSCAPs and self-aligned inversion-channel MOSFETs with Al2O3/Ga2O3 (Gd2O3) as a gate dielectric	Lin, TD;Chiu, HC;Chang, P;Lee, WC;Chiang, TH;Kwo, JR;Tsai, W;Hong, M; Lin, TD; Chiu, HC; Chang, P; Lee, WC; Chiang, TH; Kwo, JR; Tsai, W; Hong, M; MINGHWEI HONG
臺大學術典藏	2018-09-10T07:34:13Z	Self-aligned inversion-channel In 0.75 Ga 0.25 As MOSFETs using MBE-Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) and ALD-Al 2 O 3 as gate dielectrics	Lin, TD;Chiu, HC;Chang, P;Chang, YH;Lin, CA;Chang, WH;Kwo, J;Tsai, W;Hong, M; Lin, TD; Chiu, HC; Chang, P; Chang, YH; Lin, CA; Chang, WH; Kwo, J; Tsai, W; Hong, M; MINGHWEI HONG
臺大學術典藏	2018-09-10T07:34:12Z	Enhancement Mode InGaAs MOSFETs	Lin, TD;Chiu, HC;Chang, P;Lee, WC;Kwo, JR;Tsai, W;Hong, M; Lin, TD; Chiu, HC; Chang, P; Lee, WC; Kwo, JR; Tsai, W; Hong, M; MINGHWEI HONG
臺大學術典藏	2018-09-10T07:34:11Z	Achieving nearly free fermi-level movement and V th engineering in Ga 2 O 3 (Gd 2 O 3)/In 0.2 Ga 0.8 As	Lin, TD;Wu, YD;Chang, YC;Chiang, TH;Chuang, CY;Lin, CA;Chang, WH;Chiu, HC;Tsai, W;Kwo, J;others; Lin, TD; Wu, YD; Chang, YC; Chiang, TH; Chuang, CY; Lin, CA; Chang, WH; Chiu, HC; Tsai, W; Kwo, J; others; MINGHWEI HONG
臺大學術典藏	2018-09-10T07:22:51Z	Thrombin activates the growth, cell-cycle kinetics, and clustering of human dental pulp cells	Chang, M.-C.;Jeng, J.-H.;Lin, C.-P.;Lan, W.-H.;Tsai, W.;Hsieh, C.-C.; CHUN-PIN LIN
臺大學術典藏	2018-09-10T07:22:48Z	Thrombin activates the growth, cell-cycle kinetics, and clustering of human dental pulp cells	Chang, M.-C.;Jeng, J.-H.;Lin, C.-P.;Lan, W.-H.;Tsai, W.;Hsieh, C.-C.; JIIANG-HUEI JENG
臺大學術典藏	2018-09-10T07:01:25Z	High-performance self-aligned inversion-channel In 0.53 Ga 0.47 As metal-oxide-semiconductor field-effect-transistor with Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) as gate dielectrics	Lin, TD; Chiu, HC; Chang, P; Tung, LT; Chen, CP; Hong, M; Kwo, J; Tsai, W; Wang, YC; MINGHWEI HONG
臺大學術典藏	2018-09-10T07:01:23Z	1 nm equivalent oxide thickness in Ga 2 O 3 (Gd 2 O 3)/In 0.2 Ga 0.8 As metal-oxide-semiconductor capacitors	Shiu, KH; Chiang, TH; Chang, P; Tung, LT; Hong, M; Kwo, J; Tsai, W; MINGHWEI HONG
臺大學術典藏	2018-09-10T07:01:21Z	Approaching Fermi level unpinning in oxide-In0. 2Ga0. 8As	Chiang, TH; Lee, WC; Lin, TD; Lin, Dennis; Shiu, KH; Kwo, J; Wang, WE; Tsai, W; Hong, M; MINGHWEI HONG
臺大學術典藏	2018-09-10T07:01:20Z	Oxide scalability in Al2O3/Ga2O3 (Gd2O3)/In0. 20Ga0. 80As/GaAs heterostructures	Shiu, KH; Chiang, CH; Lee, YJ; Lee, WC; Chang, P; Tung, LT; Hong, M; Kwo, J; Tsai, W; MINGHWEI HONG

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