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Showing items 1-12 of 12 (1 Page(s) Totally)
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| 國立交通大學 |
2020-02-02T23:55:33Z |
Hot-Carrier Injection-Induced Disturb and Improvement Methods in 3D NAND Flash Memory
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Lin, Wei-Liang; Tsai, Wen-Jer; Cheng, C. C.; Lu, Chun-Chang; Ku, S. H.; Chang, Y. W.; Wu, Guan-Wei; Liu, Lenvis; Hwang, S. W.; Lu, Tao-Cheng; Chen, Kuang-Chao; Tseng, Tseung-Yuen; Lu, Chih-Yuan |
| 國立交通大學 |
2020-01-02T00:04:18Z |
Investigation of Electron and Hole Lateral Migration in Silicon Nitride and Data Pattern Effects on ${V}_{{t}}$ Retention Loss in a Multilevel Charge Trap Flash Memory
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Liu, Yu-Heng; Zhan, Ting-Chien; Wang, Tahui; Tsai, Wen-Jer; Lu, Tao-Cheng; Chen, Kuang-Chao; Lu, Chih-Yuan |
| 國立交通大學 |
2019-08-02T02:24:17Z |
Chip-Level Characterization and RTN-Induced Error Mitigation beyond 20nm Floating Gate Flash Memory
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Lin, T. W.; Ku, S. H.; Cheng, C. H.; Lee, C. W.; Ijen-Huang; Tsai, Wen-Jer; Lu, T. C.; Lu, W. P.; Chen, K. C.; Wang, Tahui; Lu, Chih-Yuan |
| 國立交通大學 |
2019-05-02T00:25:50Z |
Grain Boundary Trap-Induced Current Transient in a 3-D NAND Flash Cell String
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Lin, Wei-Liang; Tsai, Wen-Jer; Cheng, C. C.; Ku, S. H.; Liu, Lenvis; Hwang, S. W.; Lu, Tao-Cheng; Chen, Kuang-Chao; Tseng, Tseung-Yuen; Lu, Chih-Yuan |
| 國立交通大學 |
2019-04-02T06:04:53Z |
Error Characterization and ECC Usage Relaxation beyond 20nm Floating Gate NAND Flash Memory
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Ku, S. H.; Lin, T. W.; Cheng, C. H.; Lee, C. W.; Chen, Ti-Wen; Tsai, Wen-Jer; Lu, T. C.; Lu, W. P.; Chen, K. C.; Wang, Tahui; Lu, Chih-Yuan |
| 國立交通大學 |
2019-04-02T06:04:37Z |
Analysis and Realization of TLC or even QLC Operation with a High Performance Multi-times Verify Scheme in 3D NAND Flash memory
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Lu, C. C.; Cheng, C. C.; Chiu, H. P.; Lin, W. L.; Chen, T. W.; Ku, S. H.; Tsai, Wen-Jer; Lu, T. C.; Chen, K. C.; Wang, Tahui; Lu, Chih-Yuan |
| 國立交通大學 |
2018-08-21T05:56:39Z |
Polycrystalline-Silicon Channel Trap Induced Transient Read Instability in a 3D NAND Flash Cell String
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Tsai, Wen-Jer; Lin, W. L.; Cheng, C. C.; Ku, S. H.; Chou, Y. L.; Liu, Lenvis; Hwang, S. W.; Lu, T. C.; Chen, K. C.; Wang, Tahui; Lu, Chih-Yuan |
| 國立交通大學 |
2018-08-21T05:54:20Z |
Characterization of nitride hole lateral transport in a charge trap flash memory by using a random telegraph signal method
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Liu, Yu-Heng; Jiang, Cheng-Min; Lin, Hsiao-Yi; Wang, Tahui; Tsai, Wen-Jer; Lu, Tao-Cheng; Chen, Kuang-Chao; Lu, Chih-Yuan |
| 國立交通大學 |
2017-04-21T06:56:17Z |
Electric Field Induced Nitride Trapped Charge Lateral Migration in a SONOS Flash Memory
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Liu, Yu-Heng; Jiang, Cheng-Min; Chen, Wei-Chun; Wang, Tahui; Tsai, Wen-Jer; Lu, Tao-Cheng; Chen, Kuang-Chao; Lu, Chih-Yuan |
| 國立交通大學 |
2017-04-21T06:56:07Z |
Electric Field Induced Nitride Trapped Charge Lateral Migration in a SONOS Flash Memory
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Liu, Yu-Heng; Jiang, Cheng-Min; Chen, Wei-Chun; Wang, Tahui; Tsai, Wen-Jer; Lu, Tao-Cheng; Chen, Kuang-Chao; Lu, Chih-Yuan |
| 國立交通大學 |
2014-12-12T01:25:20Z |
對於利用氮化矽局部電荷儲存之快閃記憶元件可靠度問題的探討
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蔡文哲; Tsai, Wen-Jer; 汪大暉; Wang, Tahui |
| 國立交通大學 |
2014-12-08T15:10:06Z |
A Novel Hot-Electron Programming Method in a Buried Diffusion Bit-Line SONOS Memory by Utilizing Nonequilibrium Charge Transport
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Wang, Tahui; Tang, Chun-Jung; Li, C. -W.; Lee, Chih Hsiung; Ou, T. -F; Chang, Yao-Wen; Tsai, Wen-Jer; Lu, Tao-Cheng; Chen, K. -C.; Lu, Chih-Yuan |
Showing items 1-12 of 12 (1 Page(s) Totally)
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