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"tsai yan ying"的相關文件
顯示項目 6-30 / 46 (共2頁) 1 2 > >> 每頁顯示[10|25|50]項目
| 國立成功大學 |
2008-06-16 |
Further investigation of a hydrogen-sensing Pd/GaAs heterostructure field-effect transistor (HFET)
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Hung, Ching-Wen; Tsai, Tsung-Han; Chen, Huey-Ing; Tsai, Yan-Ying; Chen, Tzu-Pin; Liu, Wen-Chau |
| 國立成功大學 |
2008-01-15 |
Temperature-dependent hydrogen sensing characteristics of a new Pt/InAlAs Schottky diode-type sensor
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Hung, Ching-Wen; Tsai, Tsung-Han; Chen, Huey-Ing; Tsai, Yan-Ying; Chen, Tzu-Pin; Chen, Li-Yang; Chu, Kuei-Yi; Liu, Wen-Chau |
| 國立成功大學 |
2007-12 |
A hydrogen sensor based on InAlAs material with Pt catalytic thin film
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Hung, Ching-Wen; Tsai, Tsung-Han; Tsai, Yan-Ying; Lin, Kun-Wei; Chen, Huey-Ing; Chen, Tzu-Pin; Liu, Wen-Chau |
| 國立成功大學 |
2007-07-16 |
On the hydrogen sensing properties of a Pd/GaAs transistor-type gas sensor in a nitrogen ambiance
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Hung, Ching-Wen; Lin, Kun-Wei; Liu, Rong-Chau; Tsai, Yan-Ying; Lai, Po-Hsien; Fu, Su-I; Chen, Tzu-Pin; Chen, Huey-Ing; Liu, Wen-Chau |
| 國立成功大學 |
2007-06-26 |
Comprehensive investigation of hydrogen-sensing properties of Pt/InAIP-based Schottky diodes
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Tsai, Yan-Ying; Hung, Ching-Wen; Fu, Ssu-I; Lai, Po-Hsien; Chang, Hung-Chi; Chen, Huey-Ing; Liu, Wen-Chau |
| 國立成功大學 |
2007-06-26 |
Three-terminal-controlled field-effect resistive hydrogen sensor
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Hung, Ching-Wen; Lin, Kun-Wei; Chang, Hung-Chi; Tsai, Yan-Ying; Lai, Po-Hsien; Fu, Ssu-I.; Chen, Tzu-Pin; Chen, Huey-Ing; Liu, Wen-Chau |
| 國立成功大學 |
2007-06-18 |
Comprehensive analysis of hydrogen sensing properties of a Pd-gate metal-semiconductor high electron mobility transistor
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Tsai, Yan-Ying; Lin, Kun-Wei; Chen, Huey-Ing; Hung, Ching-Wen; Chen, Tzu-Pin; Liu, Wen-Chau |
| 國立成功大學 |
2007-05 |
Comprehensive investigation on emitter ledge length of InGaP/GaAs heterojunction bipolar transistors
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Fu, Ssu-I; Liu, Rong-Chau; Cheng, Shiou-Ying; Lai, Po-Hsien; Tsai, Yan-Ying; Hung, Ching-Wen; Chen, Tzu-Pin; Liu, Wen-Chau |
| 國立成功大學 |
2007-05 |
On the temperature-dependent characteristics of metamorphic heterostructure field-effect transistors with different Schottky gate metals
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Lai, Po-Hsien; Fu, SSu-I; Hung, Ching-Wen; Tsai, Yan-Ying; Chen, Tzu-Pin; Chen, Chun-Wei; Huang, Yi-Wen; Liu, Wen-Chau |
| 國立成功大學 |
2007-05 |
Study of a new field-effect resistive hydrogen sensor based on a Pd/oxide/AlGaAs transistor
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Hung, Ching-Wen; Chang, Hung-Chi; Tsai, Yan-Ying; Lai, Po-Hsien; Fu, SSu-I; Chen, Tzu-Pin; Chen, Huey-Ing; Liu, Wen-Chau |
| 國立成功大學 |
2007-03-08 |
Comprehensive study of a Pd-GaAs high electron mobility transistor (HEMT)-based hydrogen sensor
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Hung, Ching-Wen; Lin, Han-Lien; Chen, Huey-Ing; Tsai, Yan-Ying; Lai, Po-Hsien; Fu, Ssu-I; Chuang, Hung-Ming; Liu, Wen-Chau |
| 國立成功大學 |
2007-01-10 |
Comprehensive study of hydrogen sensing characteristics of Pd metal-oxide-semiconductor (MOS) transistors with Al0.24Ga0.76As and In0.49Ga0.51P Schottky contact layers
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Tsai, Yan-Ying; Cheng, Chin-Chuan; Lai, Po-Hsien; Fu, Ssu-I; Hong, Ching-Wen; Chen, Huey-Ing; Liu, Wen-Chau |
| 國立成功大學 |
2007-01 |
On the emitter ledge length effect for InGaP/GaAs heterojunction bipolar transistors
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Fu, Ssu-I; Cheng, Shiou-Ying; Lai, Po-Hsien; Tsai, Yan-Ying; Hung, Ching-Wen; Liu, Wen-Chau |
| 國立成功大學 |
2007 |
A hydrogen gas sensitive Pt-In0.5Al0.5P metal-semiconductor schottky diode
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Tsai, Yan-Ying; Chen, Huey-Ing; Hung, Ching-Wen; Chen, Tzu-Pin; Tsai, Tsung-Han; Chu, Kuei-Yi; Chen, Li-Yang; Liu, Wen-Chau |
| 國立成功大學 |
2007 |
Comprehensive study of thermal stability performance of metamorphic heterostructure field-effect transistors with Ti/Au and Au metal gates
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Lai, Po-Hsien; Liu, Rong-Chau; Fu, Ssu-I; Tsai, Yan-Ying; Hung, Ching-Wen; Chen, Tzu-Pin; Chen, Chun-Wei; Liu, Wen-Chau |
| 國立成功大學 |
2007 |
Effect of formal passivations on temperature-dependent characteristics of high electron mobility transistors
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Lai, Po-Hsien; Liu, Rong-Chau; Fu, Ssu-I; Tsai, Yan-Ying; Hung, Ching-Wen; Chen, Tzu-Pin; Liu, Wen-Chau |
| 國立成功大學 |
2007 |
Influence of emitter-edge-thinning thickness on the heterojunction bipolar transistor performance
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Fu, Ssu-I; Chen, Tzu-Pin; Liu, Rong-Chau; Cheng, Shiou-Ying; Lai, Po-Hsien; Tsai, Yan-Ying; Hung, Ching-Wen; Liu, Wen-Chau |
| 國立成功大學 |
2006-12-25 |
Temperature effect on impact ionization characteristics in metamorphic high electron mobility transistors
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Lai, Po-Hsien; Fu, Ssu-I; Hung, Ching-Wen; Tsai, Yan-Ying; Chen, Tzu-Pin; Chen, Chun-Wei; Liu, Wen-Chau |
| 國立成功大學 |
2006-12 |
A novel Pt/In0.52Al0.48As Schottky diode-type hydrogen sensor
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Hung, Ching-Wen; Lin, Han-Lien; Chen, Huey-Ing; Tsai, Yan-Ying; Lai, Po-Hsien; Fu, Ssu-I; Liu, Wen-Chau |
| 國立成功大學 |
2006-11 |
Comprehensive study of emitter-ledge thickness of InGaP/GaAs HBTs
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Fu, Ssu-I; Cheng, Shiou-Ying; Chen, Tzu-Pin; Lai, Po-Hsien; Tsai, Yan-Ying; Hung, Ching-Wen; Yen, Chih-Hung; Liu, Wen-Chau |
| 國立成功大學 |
2006-09-15 |
Performance enhancement of a heterojunction bipolar transistor (HBT) by two-step passivation
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Fu, Ssu-I.; Lai, Po-Hsien; Tsai, Yan-Ying; Hung, Ching-Wen; Yen, Chih-Hung; Cheng, Shiou-Ying; Liu, Wen-Chau |
| 國立成功大學 |
2006-08 |
New field-effect resistive Pd/oxide/AlGaAs hydrogen sensor based on pseudomorphic high electron mobility transistor
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Hung, Ching-Wen; Lin, Han-Lien; Tsai, Yan-Ying; Lai, Po-Hsien; Fu, Ssu-I; Chen, Huey-Ing; Liu, Wen-Chau |
| 國立成功大學 |
2006-04 |
Pd-oxide-Al0.24Ga0.76As (MOS) high electron mobility transistor (HEMT)-based hydrogen sensor
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Cheng, Chin-Chuan; Tsai, Yan-Ying; Lin, Kun-Wei; Chen, Huey-Ing; Hsu, Wei-Hsi; Hung, Ching-Wen; Liu, Rong-Chau; Liu, Wen-Chau |
| 國立成功大學 |
2006-03 |
Thermal-stability improvement of a sulfur-passivated InGaP/InGaAs/GaAs HFET
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Lai, Po-Hsien; Fu, SSu-I; Tsai, Yan-Ying; Yen, Chih-Hung; Chuang, Hung-Ming; Cheng, Shiou-Ying; Liu, Wen-Chau |
| 國立成功大學 |
2006-03 |
On a GaAs-based transistor-type hydrogen sensing detector with a Pd/Al0.24Ga0.76As metal-semiconductor Schottky gate
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Tsai, Yan-Ying; Hung, Ching-Wen; Lin, Kun-Wei; Lai, Po-Hsien; Fu, SSu-I; Chuang, Hung-Ming; Chen, Huey-Ing; Liu, Wen-Chau |
顯示項目 6-30 / 46 (共2頁) 1 2 > >> 每頁顯示[10|25|50]項目
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