|
"tsai yan ying"的相關文件
顯示項目 21-45 / 46 (共2頁)
1 2 > >>
每頁顯示[10|25|50]項目
| 國立成功大學 |
2007 |
Effect of formal passivations on temperature-dependent characteristics of high electron mobility transistors
|
Lai, Po-Hsien; Liu, Rong-Chau; Fu, Ssu-I; Tsai, Yan-Ying; Hung, Ching-Wen; Chen, Tzu-Pin; Liu, Wen-Chau |
| 國立成功大學 |
2007 |
Influence of emitter-edge-thinning thickness on the heterojunction bipolar transistor performance
|
Fu, Ssu-I; Chen, Tzu-Pin; Liu, Rong-Chau; Cheng, Shiou-Ying; Lai, Po-Hsien; Tsai, Yan-Ying; Hung, Ching-Wen; Liu, Wen-Chau |
| 國立成功大學 |
2006-12-25 |
Temperature effect on impact ionization characteristics in metamorphic high electron mobility transistors
|
Lai, Po-Hsien; Fu, Ssu-I; Hung, Ching-Wen; Tsai, Yan-Ying; Chen, Tzu-Pin; Chen, Chun-Wei; Liu, Wen-Chau |
| 國立成功大學 |
2006-12 |
A novel Pt/In0.52Al0.48As Schottky diode-type hydrogen sensor
|
Hung, Ching-Wen; Lin, Han-Lien; Chen, Huey-Ing; Tsai, Yan-Ying; Lai, Po-Hsien; Fu, Ssu-I; Liu, Wen-Chau |
| 國立成功大學 |
2006-11 |
Comprehensive study of emitter-ledge thickness of InGaP/GaAs HBTs
|
Fu, Ssu-I; Cheng, Shiou-Ying; Chen, Tzu-Pin; Lai, Po-Hsien; Tsai, Yan-Ying; Hung, Ching-Wen; Yen, Chih-Hung; Liu, Wen-Chau |
| 國立成功大學 |
2006-09-15 |
Performance enhancement of a heterojunction bipolar transistor (HBT) by two-step passivation
|
Fu, Ssu-I.; Lai, Po-Hsien; Tsai, Yan-Ying; Hung, Ching-Wen; Yen, Chih-Hung; Cheng, Shiou-Ying; Liu, Wen-Chau |
| 國立成功大學 |
2006-08 |
New field-effect resistive Pd/oxide/AlGaAs hydrogen sensor based on pseudomorphic high electron mobility transistor
|
Hung, Ching-Wen; Lin, Han-Lien; Tsai, Yan-Ying; Lai, Po-Hsien; Fu, Ssu-I; Chen, Huey-Ing; Liu, Wen-Chau |
| 國立成功大學 |
2006-04 |
Pd-oxide-Al0.24Ga0.76As (MOS) high electron mobility transistor (HEMT)-based hydrogen sensor
|
Cheng, Chin-Chuan; Tsai, Yan-Ying; Lin, Kun-Wei; Chen, Huey-Ing; Hsu, Wei-Hsi; Hung, Ching-Wen; Liu, Rong-Chau; Liu, Wen-Chau |
| 國立成功大學 |
2006-03 |
Thermal-stability improvement of a sulfur-passivated InGaP/InGaAs/GaAs HFET
|
Lai, Po-Hsien; Fu, SSu-I; Tsai, Yan-Ying; Yen, Chih-Hung; Chuang, Hung-Ming; Cheng, Shiou-Ying; Liu, Wen-Chau |
| 國立成功大學 |
2006-03 |
On a GaAs-based transistor-type hydrogen sensing detector with a Pd/Al0.24Ga0.76As metal-semiconductor Schottky gate
|
Tsai, Yan-Ying; Hung, Ching-Wen; Lin, Kun-Wei; Lai, Po-Hsien; Fu, SSu-I; Chuang, Hung-Ming; Chen, Huey-Ing; Liu, Wen-Chau |
| 國立成功大學 |
2006-02 |
AlGaAs/InGaAs/GaAs transistor-based hydrogen sensing device grown by metal organic chemical vapor deposition
|
Hung, Ching-Wen; Lin, Han-Lien; Tsai, Yan-Ying; Lai, Po-Hsien; Fu, Ssu-I; Chen, Huey-Ing; Liu, Wen-Chau |
| 國立成功大學 |
2006-01-17 |
Characteristics of a Pd-oxide-In0.49Ga0.51P high electron mobility transistor (HEMT)-based hydrogen sensor
|
Cheng, Chin-Chuan; Tsai, Yan-Ying; Lin, Kun-Wei; Chen, Huey-Ing; Hsu, Wei-Hsi; Hong, Ching-Wen; Liu, Wen-Chau |
| 國立成功大學 |
2006-01 |
Influences of sulfur passivation on temperature-dependent characteristics of an AlGaAs/InGaAs/GaAs PHEMT
|
Lai, Po-Hsien; Chen, Chun-Wei; Kao, Chung-I; Fu, Ssu-I; Tsai, Yan-Ying; Hung, Ching-Wen; Yen, Chih-Hung; Chuang, Hung-Ming; Cheng, Shiou-Ying; Liu, Wen-Chau |
| 國立成功大學 |
2006 |
A study of composite-passivation of an InGaP/GaAs heterojunction bipolar transistor
|
Fu, Ssu-I; Cheng, Shiou-Ying; Lai, Po-Hsien; Tsai, Yan-Ying; Hung, Ching-Wen; Yen, Chih-Hung; Liu, Wen-Chau |
| 國立成功大學 |
2006 |
Improved temperature-dependent characteristics of a sulfur-passivated AlGaAs/InGaAs/GaAs pseudomorphic high-electron-mobility transistor
|
Lai, Po-Hsien; Fu, Ssu-I; Tsai, Yan-Ying; Hung, Ching-Wen; Yen, Chih-Hung; Chuang, Hung-Ming; Liu, Wen-Chau |
| 國立成功大學 |
2006 |
On the hydrogen sensing properties of a Pt-oxide-In0.5Al0.5P Schottky diode
|
Tsai, Yan-Ying; Hung, Ching-Wen; Fu, Ssu-I; Lai, Po-Hsien; Chen, Huey-Ing; Liu, Wen-Chau |
| 國立成功大學 |
2005-09 |
Study of hydrogen-sensing characteristics of a Pt-oxide-AlGaAs metal-oxide-semiconductor high electron mobility transistor
|
Cheng, Chin-Chuan; Liu, Wen-Chau; Lin, Han-Lien; Hong, Ching-Wen; Hsu, Wei-Hsi; Chen, Huey-Ing; Lin, Kun-Wei; Tsai, Yan-Ying |
| 國立成功大學 |
2005-08-22 |
Characteristics of a sulfur-passivated InGaP/InGaAs/GaAs heterostructure field-effect transistor
|
Lai, Po-Hsien; Fu, Ssu-I; Tsai, Yan-Ying; Yen, Chih-Hung; Cheng, Shiou-Ying; Liu, Wen-Chau |
| 國立成功大學 |
2005-03-15 |
Hydrogen sensing properties of a Pt-oxide-Al0.24Ga0.76As high-electron-mobility transistor
|
Cheng, Chin-Chuan; Tsai, Yan-Ying; Lin, Kun-Wei; Chen, Huey-Ing; Liu, Wen-Chau |
| 國立成功大學 |
2005-02 |
DC characterization of InP/InGaAs tunneling emitter bipolar transistor
|
Cheng, Shiou-Ying; Chen, Chun-Yuan; Fu, Ssu-I; Lai, Po-Hsien; Tsai, Yan-Ying; Liu, Wen-Chau |
| 國立成功大學 |
2004-06-05 |
砷化鋁鎵蕭特基二極體與電晶體式氫氣感測器之研製
|
蔡衍穎; Tsai, Yan-Ying |
| 國立成功大學 |
2004-06-05 |
砷化鋁鎵蕭特基二極體與電晶體式氫氣感測器之研製
|
蔡衍穎; Tsai, Yan-Ying |
| 國立成功大學 |
2004-06 |
Hydrogen sensing characteristics of Pd- and Pt-Al0.3Ga0.7As metal-semiconductor (MS) Schottky diodes
|
Cheng, Chin-Chuan; Tsai, Yan-Ying; Lin, Kun-Wei; Chen, Huey-Ing; Hsu, Wei-His; Chuang, Hung-Ming; Chen, Chun-Yuan; Liu, Wen-Chau |
| 國立成功大學 |
2003-12 |
Investigation of hydrogen-sensing properties of Pd/AlGaAs-based Schottky diodes
|
Tsai, Yan-Ying; Lin, Kun-Wei; Lu, Chun-Tsen; Chen, Huey-Ing; Chuang, Hung-Ming; Chen, Chun-Yuan; Cheng, Chin-Chuan; Liu, Wen-Chau |
| 國立成功大學 |
2003-11 |
Comparative hydrogen sensing performances of Pd- and Pt-InGaP metal-oxide-semiconductor Schottky diodes
|
Tsai, Yan-Ying; Lin, Kun-Wei; Chen, Huey-Ing; Lu, Chun-Tsen; Chuang, Hung-Ming; Chen, Chun-Yuan; Liu, Wen-Chau |
顯示項目 21-45 / 46 (共2頁)
1 2 > >>
每頁顯示[10|25|50]項目
|
