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机构 日期 题名 作者
國立交通大學 2019-05-02T00:25:53Z Comparison of the Physical and Electrical Properties of HfO2/Al2O3/HfO2/GeOx/Ge and HfO2/Al2O3/GeOx/Ge Gate Stacks Tsai, Yi-He; Chou, Chen-Han; Li, Hui-Hsuan; Yeh, Wen-Kuan; Lino, Yu-Hsien; Ko, Fu-Hsiang; Chien, Chao-Hsin
國立交通大學 2019-04-03T06:44:37Z Microwave Annealing for NiSiGe Schottky Junction on SiGe P-Channel Lin, Yu-Hsien; Tsai, Yi-He; Hsu, Chung-Chun; Luo, Guang-Li; Lee, Yao-Jen; Chien, Chao-Hsin
國立交通大學 2019-04-02T06:00:50Z Integration of microwave-annealed oxidation on germanium metal-oxide-semiconductor devices Hsu, Chung-Chun; Chi, Wei-Chun; Tsai, Yi-He; Tsai, Ming-Li; Wang, Shin-Yuan; Chou, Chen-Han; Zhang, Jun Lin; Luo, Guang-Li; Chien, Chao-Hsin
國立交通大學 2019-04-02T06:00:28Z Demonstration of HfO2-Based Gate Dielectric With Low Interface State Density and Sub-nm EOT on Ge by Incorporating Ti Into Interfacial Layer Tsai, Yi-He; Chou, Chen-Han; Chung, Yun-Yan; Yeh, Wen-Kuan; Lin, Yu-Hsien; Ko, Fu-Hsiang; Chien, Chao-Hsin
國立交通大學 2019-04-02T05:59:54Z First Experimental Demonstration and Mechanism of Abnormal Palladium Diffusion Induced by Excess Interstitial Ge Chou, Chen-Han; Shih, An-Shih; Yu, Shao-Cheng; Lin, Yu-Hsi; Tsai, Yi-He; Lin, Chiung-Yuan; Yeh, Wen-Kuan; Chien, Chao-Hsin
國立交通大學 2018-08-21T05:53:58Z Experimental Realization of Thermal Stability Enhancement of Nickel Germanide Alloy by Using TiN Metal Capping Chou, Chen-Han; Tsai, Yi-He; Hsu, Chung-Chun; Jau, Yu-Hau; Lin, Yu-Hsien; Yeh, Wen-Kuan; Chien, Chao-Hsin
國立交通大學 2018-08-21T05:53:19Z Incorporating Yttrium into a GeO Interfacial Layer with HfO2-Based Gate Stack on Ge Chou, Chen-Han; Lu, Yu-Hong; Tsai, Yi-He; Shih, An-Shih; Yeh, Wen-Kuan; Chien, Chao-Hsin
國立交通大學 2017-04-21T06:56:35Z Experimental Realization of a Ternary-Phase Alloy Through Microwave-Activated Annealing for Ge Schottky pMOSFETs Hsu, Chung-Chun; Chi, Wei-Chun; Tsai, Yi-He; Chou, Chen-Han; Chen, Che-Wei; Chien, Hung-Pin; Chuang, Shang-Shiun; Luo, Guang-Li; Lee, Yao-Jen; Chien, Chao-Hsin
國立交通大學 2017-04-21T06:55:58Z Improving Thermal Stability and Interface State Density of High-kappa Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium Tsai, Yi-He; Chou, Chen-Han; Shih, An-Shih; Jau, Yu-Hau; Yeh, Wen-Kuan; Lin, Yu-Hsien; Ko, Fu-Hsiang; Chien, Chao-Hsin
國立交通大學 2017-04-21T06:48:50Z Integration of Hetero-Structure Body-Tied Ge FinFET Using Retrograde-Well Implantation Chou, Yu-Che; Hsu, Chung-Chun; Chun, Cheng-Ting; Chou, Chen-Han; Tsai, Ming-Li; Tsai, Yi-He; Lee, Wei-Li; Wang, Shin-Yuan; Luo, Guang-Li; Chien, Chao-Hsin
國立交通大學 2016-03-28T00:04:17Z High-Performance Schottky Contact Quantum-Well Germanium Channel pMOSFET With Low Thermal Budget Process Hsu, Chung-Chun; Tsai, Yi-He; Chen, Che-Wei; Li, Jyun-Han; Lin, Yu-Hsien; Lee, Yao-Jen; Luo, Guang-Li; Chien, Chao-Hsin

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