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Showing items 26-32 of 32 (2 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:02:54Z |
Compositional disordering of InGaAs/GaAs heterostructures by low-temperature-grown GaAs layers
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Tsang, JS; Lee, CP; Lee, SH; Tsai, KL; Tsai, CM; Fan, JC |
| 國立交通大學 |
2014-12-08T15:02:51Z |
The effect of barrier structure on the performance of double barrier quantum well infra-red photodetectors
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Tsai, KL; Lee, CP; Chen, PC; Tsang, JS; Tsai, CM; Fan, JC |
| 國立交通大學 |
2014-12-08T15:02:34Z |
The dependence of the electrical characteristics of the GaN epitaxial layer on the thermal treatment of the GaN buffer layer
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Lin, CF; Chi, GC; Feng, MS; Guo, JD; Tsang, JS; Hong, JMH |
| 國立交通大學 |
2014-12-08T15:02:22Z |
Thermal reactions of Pd/AlxGa1-xAs contacts
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Chuang, HF; Lee, CP; Tsang, JS; Fan, JC |
| 國立交通大學 |
2014-12-08T15:01:57Z |
Investigation of the indium atom interdiffusion on the growth of GaN/InGaN heterostructures
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Tsang, JS; Guo, JD; Chan, SH; Feng, MS; Chang, CY |
| 國立交通大學 |
2014-12-08T15:01:08Z |
Thermal annealing of Pd/InAlAs Schottky contacts for transistor buried-gate technologies
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Chuang, HF; Lee, CP; Tsai, CM; Liu, DC; Tsang, JS; Fan, JC |
| 國立交通大學 |
2014-12-08T15:01:08Z |
Optical and structural properties of epitaxially lifted-off GaAs films
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Fan, JC; Lee, CP; Tsai, CM; Wang, SY; Tsang, JS |
Showing items 26-32 of 32 (2 Page(s) Totally)
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