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Showing items 1-5 of 5 (1 Page(s) Totally)
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| 國立交通大學 |
2019-04-02T05:58:16Z |
Mechanical bending effect on the photo leakage currents characteristic of amorphous silicon thin film transistors
|
Wang, M. C.; Tsao, S. W.; Chang, T. C.; Lin, Y. P.; Liu, Po-Tsun; Chen, J. R. |
| 國立交通大學 |
2014-12-08T15:47:56Z |
Mechanical bending effect on the photo leakage currents characteristic of amorphous silicon thin film transistors
|
Wang, M. C.; Tsao, S. W.; Chang, T. C.; Lin, Y. P.; Liu, Po-Tsun; Chen, J. R. |
| 國立交通大學 |
2014-12-08T15:15:07Z |
The instability of a-Si : H TFT under mechanical strain with high frequency ac bias stress
|
Wang, M. C.; Chang, T. C.; Liu, Po-Tsun; Tsao, S. W.; Lin, Y. P.; Chen, J. R. |
| 國立交通大學 |
2014-12-08T15:15:07Z |
Analysis of parasitic resistance and channel sheet conductance of a-Si : H TFT under mechanical bending
|
Wang, M. C.; Chang, T. C.; Liu, Po-Tsun; Tsao, S. W.; Chen, J. R. |
| 國立交通大學 |
2014-12-08T15:14:03Z |
Photo-leakage-current characteristic of F incorporated hydrogenated amorphous silicon thin film transistor
|
Wang, M. C.; Chang, T. C.; Liu, Po-Tsun; Tsao, S. W.; Chen, J. R. |
Showing items 1-5 of 5 (1 Page(s) Totally)
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