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Showing items 1-7 of 7 (1 Page(s) Totally)
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| 國立交通大學 |
2019-04-02T05:59:48Z |
Optoelectronic characteristics of alpha-SiC:H-based P-I-N thin-film light-emitting diodes with low-resistance and high-reflectance N+-alpha-SiCGe:H layer
|
Chen, YA; Chiou, CF; Tsay, WC; Laih, LH; Hong, JW; Chang, CY |
| 國立交通大學 |
2014-12-08T15:48:53Z |
Optoelectronic characteristics of a-SiC : H-based pin thin film LEDs having a thin Mo buffer layer in contact with p-type a-Si : H
|
Chen, YA; Wu, YH; Tsay, WC; Laih, LH; Hong, JW; Chang, CY |
| 國立交通大學 |
2014-12-08T15:04:13Z |
HYDROGENATED AMORPHOUS-SILICON CARBIDE P-I-N THIN-FILM LIGHT-EMITTING-DIODES WITH BARRIER LAYERS INSERTED AT P-I INTERFACE
|
JEN, TS; PAN, JW; SHIN, NF; TSAY, WC; HONG, JW; CHANG, CY |
| 國立交通大學 |
2014-12-08T15:03:47Z |
ELECTROLUMINESCENCE OF A-SIC-H P-I-N THIN-FILM LIGHT-EMITTING-DIODES WITH QUANTUM-WELL-INJECTION STRUCTURES
|
JEN, TS; SHIN, NF; TSAY, WC; CHEN, JY; NING, SL; HONG, JW; CHANG, CY |
| 國立交通大學 |
2014-12-08T15:02:53Z |
Double graded-gap hydrogenated amorphous silicon carbide thin-film light-emitting diode with composition-graded N layer and carbon-increasing P layer
|
Chen, YA; Chen, JK; Tsay, WC; Laih, LH; Hong, JW; Chang, CY |
| 國立交通大學 |
2014-12-08T15:01:47Z |
Porous silicon light-emitting diode with tunable color
|
Chen, YA; Chen, BF; Tsay, WC; Laih, LH; Chang, MN; Chyi, JI; Hong, JW; Chang, CY |
| 國立交通大學 |
2014-12-08T15:01:29Z |
Optoelectronic characteristics of alpha-SiC:H-based P-I-N thin-film light-emitting diodes with low-resistance and high-reflectance N+-alpha-SiCGe:H layer
|
Chen, YA; Chiou, CF; Tsay, WC; Laih, LH; Hong, JW; Chang, CY |
Showing items 1-7 of 7 (1 Page(s) Totally)
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