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Showing items 1-17 of 17 (1 Page(s) Totally)
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| 國立交通大學 |
2017-04-21T06:49:55Z |
The influence of background As on GaSb/GaAs quantum dots and its application in infrared photodetectors
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Lin, Wei-Hsun; Tseng, Chi-Che; Wu, Shung-Yi; Wu, Meng-Hsun; Lin, Shih-Yen; Wu, Meng-Chyi |
| 國立交通大學 |
2014-12-08T15:46:53Z |
Wavelength-tunable InGaAs-capped quantum-dot infrared photodetectors for multi-color detection
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Lin, Wei-Hsun; Lin, Shih-Yen; Tseng, Chi-Che; Kung, Shu-Yen; Chao, Kuang-Ping; Mai, Shu-Cheng; Wu, Meng-Chyi |
| 國立交通大學 |
2014-12-08T15:46:29Z |
The transition mechanisms of type-II GaSb/GaAs quantum-dot infrared light-emitting diodes
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Tseng, Chi-Che; Lin, Wei-Hsun; Wu, Shung-Yi; Chen, Shu-Han; Lin, Shih-Yen |
| 國立交通大學 |
2014-12-08T15:14:41Z |
Transition mechanism of InAs/GaAs quantum-dot infrared photodetectors with different InAs coverages
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Tseng, Chi-Che; Chung, Tung-Hsun; Mai, Shu-Cheng; Chao, Kuang-Ping; Lin, Wei-Hsun; Lin, Shih-Yen; Wu, Meng-Chyi |
| 國立交通大學 |
2014-12-08T15:12:14Z |
Influence of As-stabilized surface on the formation of InAs/GaAs quantum dots
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Tseng, Chi-Che; Chou, Shu-Ting; Chen, Yi-Hao; Chung, Tung-Hsun; Lin, Shih-Yen; Wu, Meng-Chyi |
| 國立交通大學 |
2014-12-08T15:12:04Z |
Influence of As on the Morphologies and Optical Characteristics of GaSb/GaAs Quantum Dots
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Tseng, Chi-Che; Mai, Shu-Cheng; Lin, Wei-Hsun; Wu, Shung-Yi; Yu, Bang-Ying; Chen, Shu-Han; Lin, Shih-Yen; Shyue, Jing-Jong; Wu, Meng-Chyi |
| 國立交通大學 |
2014-12-08T15:11:17Z |
Enhanced normal-incident absorption of quantum-dot infrared photodetectors with smaller quantum dots
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Tseng, Chi-Che; Chou, Shu-Ting; Chen, Yi-Hao; Chen, Cheng-Nan; Lin, Wei-Hsun; Chung, Tung-Hsun; Lin, Shih-Yen; Chiu, Pei-Chin; Chyi, Jen-Inn; Wu, Meng-Chyi |
| 國立交通大學 |
2014-12-08T15:10:59Z |
Single-Period InAs-GaAs Quantum-Dot Infrared Photodetectors
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Chou, Shu-Ting; Lin, Shih-Yen; Tseng, Chi-Che; Chen, Yi-Hao; Chen, Cheng-Nan; Wu, Meng-Chyi |
| 國立交通大學 |
2014-12-08T15:10:43Z |
The transition mechanisms of a ten-period InAs/GaAs quantum-dot infrared photodetector
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Tseng, Chi-Che; Chou, Shu-Ting; Lin, Shin-Yen; Chen, Cheng-Nan; Lin, Wei-Hsun; Chen, Yi-Hao; Chung, Tung-Hsun; Wu, Meng-Chyi |
| 國立交通大學 |
2014-12-08T15:08:51Z |
The influence of In composition on InGaAs-capped InAs/GaAs quantum-dot infrared photodetectors
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Lin, Wei-Hsun; Chao, Kuang-Ping; Tseng, Chi-Che; Mai, Shu-Cheng; Lin, Shih-Yen; Wu, Meng-Chyi |
| 國立交通大學 |
2014-12-08T15:08:49Z |
Enhancement of operation temperature of InAs/GaAs quantum-dot infrared photodetectors with hydrogen-plasma treatment
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Lin, Wei-Hsun; Tseng, Chi-Che; Chao, Kuang-Ping; Lin, Shih-Yen; Wu, Meng-Chyi |
| 國立交通大學 |
2014-12-08T15:08:44Z |
InGaAs-Capped InAs-GaAs Quantum-Dot Infrared Photodetectors Operating in the Long-Wavelength Infrared Range
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Lin, Wei-Hsun; Tseng, Chi-Che; Chao, Kuang-Ping; Mai, Shu-Cheng; Lin, Shih-Yen; Wu, Meng-Chyi |
| 國立交通大學 |
2014-12-08T15:08:42Z |
Voltage-tunable two-color quantum-dot infrared photodetectors
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Lin, Shih-Yen; Lin, Wei-Hsun; Tseng, Chi-Che; Chao, Kuang-Ping; Mai, Shu-Cheng |
| 國立交通大學 |
2014-12-08T15:07:24Z |
Wavelength-Tunable InGaAs-Capped Quantum-Dot Infrared Photodetectors
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Lin, Wei-Hsun; Tseng, Chi-Che; Chao, Kuang-Ping; Mai, Shu-Cheng; Lin, Shih-Yen; Wu, Meng-Chyi |
| 國立交通大學 |
2014-12-08T15:07:10Z |
Room-temperature operation type-II GaSb/GaAs quantum-dot infrared light-emitting diode
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Lin, Shih-Yen; Tseng, Chi-Che; Lin, Wei-Hsun; Mai, Shu-Cheng; Wu, Shung-Yi; Chen, Shu-Han; Chyi, Jen-Inn |
| 國立交通大學 |
2014-12-08T15:06:40Z |
Broadband Quantum-Dot Infrared Photodetector
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Lin, Wei-Hsun; Tseng, Chi-Che; Chao, Kuang-Ping; Kung, Shu-Yen; Lin, Shih-Yen; Wu, Meng-Chyi |
| 國立交通大學 |
2014-12-08T15:06:33Z |
Site-controlled self-assembled InAs quantum dots grown on GaAs substrates
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Lin, Shih-Yen; Tseng, Chi-Che; Chung, Tung-Hsun; Liao, Wen-Hsuan; Chen, Shu-Han; Chyi, Jen-Inn |
Showing items 1-17 of 17 (1 Page(s) Totally)
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