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Institution	Date	Title	Author
國立成功大學	2023	A 1.0�fJ energy/bit single-ended 1 kb 6T SRAM implemented using 40 nm CMOS process	Wang, C.-C.;Sangalang, R.G.B.;Tseng, I.-T.;Chiu, Y.-J.;Lin, Y.-C.;Jose, O.L.J.A.

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