|
|
Taiwan Academic Institutional Repository >
Browse by Author
|
"tseng tseung yuen"
Showing items 101-125 of 359 (15 Page(s) Totally)
<< < 1 2 3 4 5 6 7 8 9 10 > >>
View [10|25|50] records per page
| 國立交通大學 |
2018-01-24T07:40:30Z |
單層氧化鎂選擇器應用於電阻式記憶體之研究
|
鄔晏澤; 曾俊元; Wu, Yan-ze; Tseng, Tseung-Yuen |
| 國立交通大學 |
2018-01-24T07:38:30Z |
納米電阻式記憶體導體特點的分析方法
|
白達磊; 曾俊元; berco, dan; Tseng,Tseung-Yuen |
| 國立交通大學 |
2018-01-24T07:38:03Z |
藉由電極調整及摻雜提升氧化鋅透明性電阻式記憶體電阻轉態特性
|
費玉滿; 曾俊元; 韋光華; FIRMAN, MANGASA SIMANJUNTAK; Tseng, Tseung-Yuen; Wei, Kung-Hwa |
| 國立交通大學 |
2018-01-24T07:37:07Z |
前瞻式金氧半場效電晶體之隨機電報訊號分析與熱載子劣化研究
|
陳慶恩; 曾俊元; 張鼎張; Chen, Ching-En; Tseng, Tseung-Yuen; Chang, Ting-Chang |
| 國立交通大學 |
2018-01-24T07:37:01Z |
利用碲為源層及增強阻障特性於氮化矽金屬導電橋接電阻式記憶體之可靠度優化研究
|
戴光駿; 曾俊元; Dai, Guang-Jyun; Tseng, Tseung-Yuen |
| 國立交通大學 |
2018-01-24T07:37:01Z |
二氧化鉿金屬橋樑電阻式記憶體之可靠度研究
|
黃楚傑; 曾俊元; Huang, Chu-Jie; Tseng, Tseung-Yuen |
| 國立交通大學 |
2018-01-24T07:37:01Z |
以電泳法沉積奈米碳管的電阻式記憶體之轉態特性研究
|
林千詠; 曾俊元; Lin, Chien-Yung; Tseng, Tseung-Yuen |
| 國立交通大學 |
2018-01-24T07:37:01Z |
三維多孔石墨烯/鎳鈷氧化物複合電極材料於 超級電容器之應用
|
李佳鴻; 曾俊元; Lee, Chia-Hong; Tseng, Tseung-Yuen |
| 國立交通大學 |
2017-04-21T06:56:40Z |
Enhanced Properties in Conductive-Bridge Resistive Switching Memory With Oxide-Nitride Bilayer Structure
|
Tsai, Tsung-Ling; Jiang, Fa-Shen; Ho, Chia-Hua; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立交通大學 |
2017-04-21T06:56:33Z |
Facile production of graphene nanosheets comprising nitrogen-doping through in situ cathodic plasma formation during electrochemical exfoliation
|
Yen, Po-Jen; Ting, Chao-Chi; Chiu, Yung-Chi; Tseng, Tseung-Yuen; Hsu, Yao-Jane; Wu, Wen-Wei; Wei, Kung-Hwa |
| 國立交通大學 |
2017-04-21T06:56:31Z |
Analysis of Oxide Trap Characteristics by Random Telegraph Signals in nMOSFETs With HfO2-Based Gate Dielectrics
|
Chen, Ching-En; Chang, Ting-Chang; You, Bo; Tsai, Jyun-Yu; Lo, Wen-Hung; Ho, Szu-Han; Liu, Kuan-Ju; Lu, Ying-Hsin; Liu, Xi-Wen; Hung, Yu-Ju; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Lu, Ching-Sen |
| 國立交通大學 |
2017-04-21T06:56:20Z |
Effects of fabrication method on defects induced by nitrogen diffusion to the hafnium oxide layer in metal-oxide-semiconductor field effect transistors
|
Lu, Ying-Hsin; Chang, Ting-Chang; Ho, Szu-Han; Chen, Ching-En; Tsai, Jyun-Yu; Liu, Kuan-Ju; Liu, Xi-Wen; Lin, Chien-yu; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Yen, Wei-Ting |
| 國立交通大學 |
2017-04-21T06:56:20Z |
Impact of post-metal deposition annealing temperature on performance and reliability of high-K metal-gate n-FinFETs
|
Lin, Chien-Yu; Chang, Ting-Chang; Liu, Kuan-Ju; Tsai, Jyun-Yu; Chen, Ching-En; Liu, Hsi-Wen; Lu, Ying-Hsin; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung |
| 國立交通大學 |
2017-04-21T06:56:08Z |
Observing the evolution of graphene layers at high current density
|
Huang, Chun-Wei; Chen, Jui-Yuan; Chiu, Chung-Hua; Hsin, Cheng-Lun; Tseng, Tseung-Yuen; Wu, Wen-Wei |
| 國立交通大學 |
2017-04-21T06:55:58Z |
A Novel Varying-Bias Read Scheme for MLC and Wide Temperature Range TMO ReRAM
|
Lin, Yu-Hsuan; Lee, Ming-Hsiu; Wu, Jau-Yi; Lin, Yu-Yu; Lee, Feng-Ming; Lee, Dai-Ying; Chiang, Kuang-Hao; Lai, Erh-Kun; Tseng, Tseung-Yuen; Lu, Chih-Yuan |
| 國立交通大學 |
2017-04-21T06:55:48Z |
A stochastic simulation method for the assessment of resistive random access memory retention reliability
|
Berco, Dan; Tseng, Tseung-Yuen |
| 國立交通大學 |
2017-04-21T06:55:41Z |
A high performance transparent resistive switching memory made from ZrO2/AlON bilayer structure
|
Tsai, Tsung-Ling; Chang, Hsiang-Yu; Lou, Jesse Jen-Chung; Tseng, Tseung-Yuen |
| 國立交通大學 |
2017-04-21T06:55:22Z |
Trap state passivation improved hot-carrier instability by zirconium-doping in hafnium oxide in a nanoscale n-metal-oxide semiconductor-field effect transistors with high-k/metal gate
|
Liu, Hsi-Wen; Chang, Ting-Chang; Tsai, Jyun-Yu; Chen, Ching-En; Liu, Kuan-Ju; Lu, Ying-Hsin; Lin, Chien-Yu; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Ye, Yi-Han |
| 國立交通大學 |
2017-04-21T06:55:16Z |
A numerical analysis of progressive and abrupt reset in conductive bridging RRAM
|
Berco, Dan; Tseng, Tseung-Yuen |
| 國立交通大學 |
2017-04-21T06:55:16Z |
A numerical study of forming voltage and switching polarity dependence on Ti top electrode thickness in Zr RRAM
|
Berco, Dan; Tseng, Tseung-Yuen |
| 國立交通大學 |
2017-04-21T06:55:16Z |
A comprehensive study of bipolar operation in resistive switching memory devices
|
Berco, Dan; Tseng, Tseung-Yuen |
| 國立交通大學 |
2017-04-21T06:55:13Z |
Impacts of Co doping on ZnO transparent switching memory device characteristics
|
Simanjuntak, Firman Mangasa; Prasad, Om Kumar; Panda, Debashis; Lin, Chun-An; Tsai, Tsung-Ling; Wei, Kung-Hwa; Tseng, Tseung-Yuen |
| 國立交通大學 |
2017-04-21T06:49:25Z |
Excellent Resistance Variability Control of WOx ReRAM by a Smart Writing Algorithm
|
Lin, Yu-Hsuan; Wu, Jau-Yi; Lee, Ming-Hsiu; Wang, Tien-Yen; Lin, Yu-Yu; Lee, Feng-Ming; Lee, Dai-Ying; Lai, Erh-Kun; Chiang, Kuang-Hao; Lung, Hsiang-Lan; Hsieh, Kuang-Yeu; Tseng, Tseung-Yuen; Lu, Chih-Yuan |
| 國立交通大學 |
2017-04-21T06:49:01Z |
Fabrication of Flexible Electrochromic Devices Based on Tungsten Trioxide Nanobundles
|
Chen, Chih Hao; Tseng, Tseung-Yuen; Hung, Chung Jung |
| 國立交通大學 |
2017-04-21T06:48:32Z |
Effects of Second Phase and Defect on Electrical Properties in Bi0.5Na0.5-xKxTiO3 Lead-Free Piezoelectric Ceramics
|
Chen, Pin Yi; Chen, Cheng Sao; Chou, Chen-Chia; Tseng, Tseung-Yuen; Chen, Haydn |
Showing items 101-125 of 359 (15 Page(s) Totally)
<< < 1 2 3 4 5 6 7 8 9 10 > >>
View [10|25|50] records per page
|
