|
|
Taiwan Academic Institutional Repository >
Browse by Author
|
"tseng tseung yuen"
Showing items 211-260 of 359 (8 Page(s) Totally)
<< < 1 2 3 4 5 6 7 8 > >>
View [10|25|50] records per page
| 國立交通大學 |
2014-12-12T02:20:39Z |
鈦酸鍶鋇薄膜之特性與可靠度研究
|
黃國治; Hunag Kuo-Chih; 曾俊元; Tseng Tseung-Yuen |
| 國立交通大學 |
2014-12-12T02:17:36Z |
低溫燒結BME-Z5U鈦酸鋇陶瓷電容器之研究
|
林煜文; Lin, E-Won; 曾俊元; Tseng Tseung-Yuen |
| 國立交通大學 |
2014-12-12T02:08:46Z |
添加物對於PMN陶瓷介電材料特性影響之研究
|
藍和谷; Lan, Ho-Ku; 曾俊元; 莊振益; Tseng, Tseung-Yuen; Juang, Jeng-Yih |
| 國立交通大學 |
2014-12-12T02:06:14Z |
降溫速率對鑭加成鈦酸鋇基正溫度電阻係數的影響效應
|
陳莘白; Chen, Hsin-Pai; 曾俊元; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-12T01:55:12Z |
以水熱法製備氧化鎢奈米線網狀結構之電致變色元件研究
|
黃乙軒; Huang, Yi-Hsuan; 曾俊元; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-12T01:46:24Z |
鎵摻雜尖狀氧化鋅奈米柱陣列的場發射與光學特性之研究
|
黃聖和; Huang, Sheng-He; 曾俊元; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-12T01:46:21Z |
以氧化鋯製備雙層結構電阻式記憶體於單極性電阻轉態特性之研究
|
吳家瑋; Wu, Jia-Woei; 曾俊元; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-12T01:37:17Z |
以氧化鈣摻雜氧化鋯層於單極性電阻轉態效應之研究
|
黃泰源; Huang, Tai-Yuan; 曾俊元; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-12T01:37:08Z |
奈米碳管與錳氧化物奈米複合物超高電容器的製作與其特性之研究
|
洪政漢; Hung, Jeng-Han; 曾俊元; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-12T01:37:08Z |
High k / Metal Gate 金氧半場效電晶體
|
何思翰; Ho, Szu-Han; 曾俊元; 張鼎張; Tseng, Tseung-Yuen; Chan, Ting-Chang |
| 國立交通大學 |
2014-12-12T01:37:08Z |
氧化鋯電阻式記憶體搭配電晶體之電阻轉換特性研究
|
藺以煒; Lin, Yi-Wei; 曾俊元; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-12T01:36:57Z |
不同電極對濺鍍法製備之氧化鋁薄膜於電阻式轉換記憶體之研究
|
孫淑炫; Sun, Shu-Shiuan; 曾俊元; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-12T01:36:56Z |
利用氮化鈦底電極改善溶膠凝膠法製備之鈦酸鉍薄膜電阻轉態特性之研究
|
李盈賢; Li, Ying-Xin; 曾俊元; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-12T01:27:28Z |
二元金屬氧化物電阻式記憶元件之界面效應研究
|
李岱螢; Lee, Dai-Ying; 曾俊元; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-12T01:27:27Z |
氧化鋯電阻式記憶元件搭配場效電晶體之特性研究
|
吳明錡; Wu, Ming Chi; 曾俊元; Tseng, Tseung Yuen |
| 國立交通大學 |
2014-12-12T01:27:27Z |
非晶態金屬氧化物薄膜電晶體之環境敏感性與可靠度
|
鍾宛芳; Chung, Wan-Fang; 曾俊元; 張鼎張; Tseng, Tseung-Yuen; Chang, Ting-Chang |
| 國立交通大學 |
2014-12-12T01:27:10Z |
前瞻電阻式轉態記憶體元件之製作與特性研究
|
蔡侑廷; Tsai, Yu-Ting; 曾俊元; 張鼎張; Tseng, Tseung-Yuen; Chang, Ting-Chang |
| 國立交通大學 |
2014-12-12T01:27:02Z |
鈦上電極對濺鍍法製備之鋯酸鍶薄膜其雙極性電阻轉換特性之研究
|
葉昱廷; Yeh, Yu-Ting; 曾俊元; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-12T01:27:02Z |
利用熱氧化法製備氧化銅薄膜於電阻式轉態記憶體之研究
|
黃志文; Huang, Chih-Wen; 曾俊元; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-12T01:24:37Z |
二元金屬氧化物應用於電阻式記憶體之界面特性研究
|
王聖裕; Wang, Sheng-Yu; 曾俊元; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-12T01:24:37Z |
鋯酸鍶基電阻式記憶元件特性與機制之研究
|
林孟漢; Lin, Meng-Han; 曾俊元; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-12T01:23:18Z |
奈米點記憶體元件之製作及其電性特性研究
|
胡志瑋; Hu, Chih-Wei; 曾俊元; 張鼎張; Tseng, Tseung-Yuen; Chang, Ting-Chang |
| 國立交通大學 |
2014-12-08T15:48:37Z |
Effects of Vanadium Doping on Resistive Switching Characteristics and Mechanisms of SrZrO(3)-Based Memory Films
|
Lin, Meng-Han; Wu, Ming-Chi; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:48:10Z |
Size-dependent field-emission characteristics of ZnO nanowires grown by porous anodic aluminum oxide templates assistance
|
Lai, Chun-Hung; Chang, Chia-Wei; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:48:10Z |
Formation of the distributed NiSiGe nanocrystals nonvolatile memory formed by rapidly annealing in N(2) and O(2) ambient
|
Hu, Chih-Wei; Chang, Ting-Chang; Tu, Chun-Hao; Chiang, Cheng-Neng; Lin, Chao-Cheng; Chen, Min-Chen; Chang, Chun-Yen; Sze, Simon M.; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:47:38Z |
Hydrogen Gas Sensors Using ZnO-SnO(2) Core-Shell Nanostructure
|
Yao, I-Chuan; Lin, Pang; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:44:21Z |
Improved resistive switching properties of Ti/ZrO(2)/Pt memory devices for RRAM application
|
Wang, Sheng-Yu; Tsai, Chen-Han; Lee, Dai-Ying; Lin, Chih-Yang; Lin, Chun-Chieh; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:42:04Z |
Effect of thermal treatment on resistive switching characteristics in Pt/Ti/Al(2)O(3)/Pt devices
|
Lin, Chih-Yang; Lee, Dai-Ying; Wang, Sheng-Yi; Lin, Chun-Chieh; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:42:03Z |
Reproducible resistive switching behavior in sputtered CeO(2) polycrystalline films
|
Lin, Chih-Yang; Lee, Dai-Ying; Wang, Sheng-Yi; Lin, Chun-Chieh; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:38:22Z |
Multilevel resistive switching in Ti/Cu(x)O/Pt memory devices
|
Wang, Sheng-Yu; Huang, Chin-Wen; Lee, Dai-Ying; Tseng, Tseung-Yuen; Chang, Ting-Chang |
| 國立交通大學 |
2014-12-08T15:38:18Z |
Controllable oxygen vacancies to enhance resistive switching performance in a ZrO(2)-based RRAM with embedded Mo layer
|
Wang, Sheng-Yu; Lee, Dai-Ying; Huang, Tai-Yuen; Wu, Jia-Woei; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:38:10Z |
Electrophoretic Fabrication and Characterizations of Manganese Oxide/Carbon Nanotube Nanocomposite Pseudocapacitors
|
Hung, Chung Jung; Hung, Jeng Han; Lin, Pang; Tseng, Tseung Yuen |
| 國立交通大學 |
2014-12-08T15:38:00Z |
Influence of H(2)O Dipole on Subthreshold Swing of Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors
|
Chung, Wan-Fang; Chang, Ting-Chang; Li, Hung-Wei; Chen, Chi-Wen; Chen, Yu-Chun; Chen, Shih-Ching; Tseng, Tseung-Yuen; Tai, Ya-Hsiang |
| 國立交通大學 |
2014-12-08T15:38:00Z |
Influence of Nanocrystals on Resistive Switching Characteristic in Binary Metal Oxides Memory Devices
|
Tsai, Yu-Ting; Chang, Ting-Chang; Lin, Chao-Cheng; Chen, Shih-Cheng; Chen, Chi-Wen; Sze, Simon M.; Yeh (Hung), Fon-Shan; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:37:50Z |
H(2)O-Assisted O(2) Adsorption in Sol-Gel Derived Amorphous Indium Gallium Zinc Oxide Thin Film Transistors
|
Chung, Wan-Fang; Chang, Ting-Chang; Li, Hung-Wei; Chen, Shih-Ching; Chen, Yu-Chun; Tseng, Tseung-Yuen; Tai, Ya-Hsiang |
| 國立交通大學 |
2014-12-08T15:37:33Z |
Dopant Activation in Single-Crystalline Germanium by Low-Temperature Microwave Annealing
|
Lee, Yao-Jen; Chuang, Shang-Shiun; Hsueh, Fu-Kuo; Lin, Ho-Ming; Wu, Shich-Chuang; Wu, Ching-Yi; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:36:57Z |
Mechanism of High Temperature Retention Property (up to 200 degrees C) in ZrO2-Based Memory Device With Inserting a ZnO Thin Layer
|
Chand, Umesh; Huang, Chun-Yang; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:36:57Z |
Compact Ga-Doped ZnO Nanorod Thin Film for Making High-Performance Transparent Resistive Switching Memory
|
Huang, Chun-Yang; Ho, Yen-Ting; Hung, Chung-Jung; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:36:22Z |
On the Origin of Anomalous OffCurrent Under Hot Carrier Stress in p-Channel DDDMOS Transistors With STI Structure
|
Chen, Ching-En; Chang, Ting-Chang; Chen, Hua-Mao; You, Bo; Yang, Kai-Hsiang; Ho, Szu-Han; Tsai, Jyun-Yu; Liu, Kuan-Ju; Lu, Ying-Hsin; Hung, Yu-Ju; Tai, Ya-Hsiang; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:36:20Z |
Resistive switching characteristics of Pt/CeOx/TiN memory device
|
Ismail, Muhammad; Talib, Ijaz; Huang, Chun-Yang; Hung, Chung-Jung; Tsai, Tsung-Ling; Jieng, Jheng-Hong; Chand, Umesh; Lin, Chun-An; Ahmed, Ejaz; Rana, Anwar Manzoor; Nadeem, Muhammad Younus; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:36:06Z |
Hydrothermal Formation of Tungsten Trioxide Nanowire Networks on Seed-Free Substrates and Their Properties in Electrochromic Device
|
Hung, Chung Jung; Huang, Yi Hsuan; Chen, Chih Hao; Lin, Pang; Tseng, Tseung Yuen |
| 國立交通大學 |
2014-12-08T15:35:55Z |
Investigation of abnormal negative threshold voltage shift under positive bias stress in input/output n-channel metal-oxide-semiconductor field-effect transistors with TiN/HfO2 structure using fast I-V measurement
|
Ho, Szu-Han; Chang, Ting-Chang; Lu, Ying-Hsin; Chen, Ching-En; Tsai, Jyun-Yu; Liu, Kuan-Ju; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Lu, Ching-Sen |
| 國立交通大學 |
2014-12-08T15:35:47Z |
Electrochromic Properties of Tunsgten Trioxide Nanostructures
|
Huang, Yi-Hsuan; Hung, Chung-Jung; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:35:47Z |
High energy density asymmetric pseudocapacitors fabricated by graphene/carbon nanotube/MnO2 plus carbon nanotubes nanocomposites electrode
|
Hung, Chung Jung; Lin, Pang; Tseng, Tseung Yuen |
| 國立交通大學 |
2014-12-08T15:35:29Z |
Low-Temperature Microwave Annealing Processes for Future IC Fabrication-A Review
|
Lee, Yao-Jen; Cho, Ta-Chun; Chuang, Shang-Shiun; Hsueh, Fu-Kuo; Lu, Yu-Lun; Sung, Po-Jung; Chen, Hsiu-Chih; Current, Michael I.; Tseng, Tseung-Yuen; Chao, Tien-Sheng; Hu, Chenming; Yang, Fu-Liang |
| 國立交通大學 |
2014-12-08T15:35:07Z |
Forming-free bipolar resistive switching in nonstoichiometric ceria films
|
Ismail, Muhammad; Huang, Chun-Yang; Panda, Debashis; Hung, Chung-Jung; Tsai, Tsung-Ling; Jieng, Jheng-Hong; Lin, Chun-An; Chand, Umesh; Rana, Anwar Manzoor; Ahmed, Ejaz; Talib, Ijaz; Nadeem, Muhammad Younus; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:34:59Z |
Switching mechanism of double forming process phenomenon in ZrOx/HfOy bilayer resistive switching memory structure with large endurance
|
Huang, Chun-Yang; Huang, Chung-Yu; Tsai, Tsung-Ling; Lin, Chun-An; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:33:46Z |
Characterization of environment-dependent hysteresis in indium gallium zinc oxide thin film transistors
|
Chen, Yu-Chun; Chang, Ting-Chang; Li, Hung-Wei; Chung, Wan-Fang; Chen, Shih-Cheng; Wu, Chang-Pei; Chen, Yi-Hsien; Tai, Ya-Hsiang; Tseng, Tseung-Yuen; Yeh(Huang), Fon-Shan |
| 國立交通大學 |
2014-12-08T15:33:45Z |
Resistive switching behavior of sol-gel deposited TiO2 thin films under different heating ambience
|
Lai, Chun-Hung; Chen, Chia-Hung; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:33:35Z |
High-k shallow traps observed by charge pumping with varying discharging times
|
Ho, Szu-Han; Chang, Ting-Chang; Lu, Ying-Hsin; Wang, Bin-Wei; Lo, Wen-Hung; Chen, Ching-En; Tsai, Jyun-Yu; Chen, Hua-Mao; Liu, Kuan-Ju; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Chen, Tsai-Fu; Cao, Xi-Xin |
Showing items 211-260 of 359 (8 Page(s) Totally)
<< < 1 2 3 4 5 6 7 8 > >>
View [10|25|50] records per page
|
