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Taiwan Academic Institutional Repository >
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"tseng tseung yuen"
Showing items 26-50 of 359 (15 Page(s) Totally)
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| 國立交通大學 |
2019-08-02T02:18:37Z |
ZnO2/ZnO bilayer switching film for making fully transparent analog memristor devices
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Simanjuntak, Firman Mangasa; Chandrasekaran, Sridhar; Lin, Chun-Chieh; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-08-02T02:18:35Z |
A new redox phloroglucinol additive incorporated gel polymer electrolyte for flexible symmetrical solid-state supercapacitors
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Phuoc-Anh Le; Van-Truong Nguyen; Yen, Po-Jen; Tseng, Tseung-Yuen; Wei, Kung-Hwa |
| 國立交通大學 |
2019-08-02T02:18:32Z |
Interface Engineering via MoS2 Insertion Layer for Improving Resistive Switching of Conductive-Bridging Random Access Memory
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Wu, Facai; Si, Shuyao; Cao, Peng; Wei, Wei; Zhao, Xiaolong; Shi, Tuo; Zhang, Xumeng; Ma, Jianwei; Cao, Rongrong; Liao, Lei; Tseng, Tseung-Yuen; Liu, Qi |
| 國立交通大學 |
2019-08-02T02:14:48Z |
Preparation of NiCo2S4-based Electrodes for Supercapacitor Application
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Yang, Chih-chieh; Tsai, Hung-yi; Tseng, Tseung-yuen |
| 國立交通大學 |
2019-05-02T00:25:50Z |
Grain Boundary Trap-Induced Current Transient in a 3-D NAND Flash Cell String
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Lin, Wei-Liang; Tsai, Wen-Jer; Cheng, C. C.; Ku, S. H.; Liu, Lenvis; Hwang, S. W.; Lu, Tao-Cheng; Chen, Kuang-Chao; Tseng, Tseung-Yuen; Lu, Chih-Yuan |
| 國立交通大學 |
2019-04-03T06:44:10Z |
A numerical study of multi filament formation in metal-ion based CBRAM
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Berco, Dan; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-03T06:41:59Z |
Lithography-free thin-titanium-nanocone metamaterial perfect absorbers using ZnO nanostructures
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Lin, Albert; Parashar, Parag; Yang, Chih-Chieh; Jian, Ding Rung; Huang, Wei-Ming; Huang, Yi-Wen; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-03T06:41:04Z |
Probing the electrochemical properties of an electrophoretically deposited Co3O4/rGO/CNTs nanocomposite for supercapacitor applications
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Kumar, Nagesh; Huang, Chun-Wei; Yen, Po-Jen; Wu, Wen-Wei; Wei, Kung-Hwa; Tseng, Tseung Yuen |
| 國立交通大學 |
2019-04-03T06:40:47Z |
Overview of emerging nonvolatile memory technologies
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Meena, Jagan Singh; Sze, Simon Min; Chand, Umesh; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-03T06:40:07Z |
Status and Prospects of ZnO-Based Resistive Switching Memory Devices
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Simanjuntak, Firman Mangasa; Panda, Debashis; Wei, Kung-Hwa; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-03T06:39:55Z |
Overview of Selector Devices for 3-D Stackable Cross Point RRAM Arrays
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Aluguri, Rakesh; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T06:04:21Z |
Excellent High Temperature Retention of TiOXNV ReRAM by Interfacial Layer Engineering
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Lin, Yu-Hsuan; Lee, Dai-Ying; Wang, Chao-Hung; Lee, Ming-Hsiu; Ho, Yung-Han; Lai, Erh-Kun; Chiang, Kuang-Hao; Lung, Hsiang-Lan; Wang, Keh-Chung; Tseng, Tseung-Yuen; Lu, Chih-Yuan |
| 國立交通大學 |
2019-04-02T06:01:05Z |
Electrical properties and fatigue behaviors of ZrO2 resistive switching thin films
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Lin, Chih-Yang; Wang, Sheng-Yi; Lee, Dai-Ying; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T06:01:04Z |
Highly sensitive nitric oxide gas sensor based on ZnO-nanorods vertical resistor operated at room temperature
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Singh, Pragya; Hu, Li-Lun; Zan, Hsiao-Wen; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T06:00:56Z |
Effect of thermal treatment on resistive switching characteristics in Pt/Ti/Al2O3/Pt devices
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Lin, Chih-Yang; Lee, Dai-Ying; Wang, Sheng-Yi; Lin, Chun-Chieh; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T06:00:56Z |
Reproducible resistive switching behavior in sputtered CeO2 polycrystalline films
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Lin, Chih-Yang; Lee, Dai-Ying; Wang, Sheng-Yi; Lin, Chun-Chieh; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T06:00:28Z |
Effects of Vanadium Doping on Resistive Switching Characteristics and Mechanisms of SrZrO3-Based Memory Films
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Lin, Meng-Han; Wu, Ming-Chi; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T06:00:27Z |
Hexanoyl chitosan/ENR25 blend polymer electrolyte system for electrical double layer capacitor
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Winie, Tan; Jamal, Asheila; Saaid, Farish Irfal; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T06:00:26Z |
Controllable oxygen vacancies to enhance resistive switching performance in a ZrO2-based RRAM with embedded Mo layer
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Wang, Sheng-Yu; Lee, Dai-Ying; Huang, Tai-Yuen; Wu, Jia-Woei; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T06:00:19Z |
Formation of the distributed NiSiGe nanocrystals nonvolatile memory formed by rapidly annealing in N-2 and O-2 ambient
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Hu, Chih-Wei; Chang, Ting-Chang; Tu, Chun-Hao; Chiang, Cheng-Neng; Lin, Chao-Cheng; Chen, Min-Chen; Chang, Chun-Yen; Sze, Simon M.; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T06:00:07Z |
Effects of Ti top electrode thickness on the resistive switching behaviors of rf-sputtered ZrO2 memory films
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Wang, Sheng-Yu; Lee, Dai-Ying; Tseng, Tseung-Yuen; Lin, Chih-Yang |
| 國立交通大學 |
2019-04-02T06:00:07Z |
Characteristics of SrTiO3 Insulated Layer in SBT Ferroelectric Thin Films
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Chou, Hsiu-Yu; Lee, En-Ko; Lin, Meng-Han; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T05:59:51Z |
High Device Yield of Resistive Switching Characteristics in Oxygen-Annealed SrZrO3 Memory Devices
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Lin, Meng-Han; Wu, Ming-Chi; Huang, Yi-Han; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T05:59:49Z |
H2O-Assisted O-2 Adsorption in Sol-Gel Derived Amorphous Indium Gallium Zinc Oxide Thin Film Transistors
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Chung, Wan-Fang; Chang, Ting-Chang; Li, Hung-Wei; Chen, Shih-Ching; Chen, Yu-Chun; Tseng, Tseung-Yuen; Tai, Ya-Hsiang |
| 國立交通大學 |
2019-04-02T05:59:47Z |
Switching Failure Mechanism in Zinc Peroxide-Based Programmable Metallization Cell
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Simanjuntak, Firman Mangasa; Chandrasekaran, Sridhar; Lin, Chun-Chieh; Tseng, Tseung-Yuen |
Showing items 26-50 of 359 (15 Page(s) Totally)
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