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Taiwan Academic Institutional Repository >
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"tseng tseung yuen"
Showing items 296-320 of 359 (15 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:18:12Z |
Nonpolar Bistable Resistive Switching Behaviors of Bismuth Titanate Oxide Thin Film
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Lin, Meng-Han; Wu, Ming-Chi; Lin, Chun-Chieh; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:15:52Z |
Resistive switching mechanisms of V-doped SrZrO3 memory films
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Lin, Chun-Chieh; Tu, Bing-Chung; Lin, Chao-Cheng; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:14:18Z |
Resistance switching properties of sol-gel derived SrZrO3 based memory thin films
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Liu, Chih-Yi; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:14:10Z |
Effect of top electrode material on resistive switching properties of ZrO2 film memory devices
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Lin, Chih-Yang; Wu, Chen-Yu; Wu, Chung-Yi; Lee, Tzyh-Cheang; Yang, Fu-Liang; Hu, Chenming; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:13:38Z |
SrTiO3-SiO2 oxide films for possible high-k gate dielectric applications
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Lin, Chun-Chieh; Lai, Li-Wen; Lin, Chih-Yang; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:13:21Z |
Well-aligned ternary Cd1-xZnxS nanowire Arrays and their composition-dependent field emission properties
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Lin, Yi-Feng; Hsu, Yung-Jung; Lu, Shih-Yuan; Chen, Kuan-Tsung; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:13:12Z |
Modified resistive switching behavior of ZrO2 memory films based on the interface layer formed by using Ti top electrode
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Lin, Chih-Yang; Wu, Chung-Yi; Wu, Chen-Yu; Tseng, Tseung-Yuen; Hu, Chenming |
| 國立交通大學 |
2014-12-08T15:13:00Z |
Voltage-polarity-independent and high-speed resistive switching properties of v-doped SrZrO3 thin films
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Lin, Chun-Chieh; Lin, Chih-Yang; Lin, Meng-Han; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:12:52Z |
Formation of Mo silicide nanodot memory by rapid thermal annealing dual electron-gun evaporated Mo-Si layer
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Lin, Chao-Cheng; Chang, Ting-Chang; Tu, Chun-Hao; Chen, Wei-Ren; Hu, Chih-Wei; Sze, Simon M.; Chang, Chun-Yen; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:12:50Z |
Electrical properties and fatigue behaviors of ZrO(2) resistive switching thin films
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Lin, Chih-Yang; Wang, Sheng-Yi; Lee, Dai-Ying; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:12:09Z |
Formation of Core/Shell-Type ZnO/CeO(2) Nanorods and CeO(2) Nanotube Arrays by Aqueous Synthesis and Wet-Etching
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Chen, Yung Sheng; Tseng, Tseung Yuen |
| 國立交通大學 |
2014-12-08T15:11:49Z |
High Device Yield of Resistive Switching Characteristics in Oxygen-Annealed SrZrO(3) Memory Devices
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Lin, Meng-Han; Wu, Ming-Chi; Huang, Yi-Han; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:11:44Z |
Environment-dependent thermal instability of sol-gel derived amorphous indium-gallium-zinc-oxide thin film transistors
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Chung, Wan-Fang; Chang, Ting-Chang; Li, Hung-Wei; Chen, Shih-Ching; Chen, Yu-Chun; Tseng, Tseung-Yuen; Tai, Ya-Hsiang |
| 國立交通大學 |
2014-12-08T15:11:07Z |
Preparation and properties of perovskite thin films for resistive nonvolatile memory applications
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Lai, Chun-Hung; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:10:51Z |
Improvement of resistive switching characteristics in SrZrO3 thin films with embedded Cr layer
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Lin, Chih-Yang; Lin, Meng-Han; Wu, Ming-Chi; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:10:32Z |
Charge storage characteristics of Mo nanocrystal dependence on Mo oxide reduction
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Lin, Chao-Cheng; Chang, Ting-; Tu, Chun-Hao; Chen, Wei-Ren; Hu, Chih-Wei; Sze, Simon M.; Tseng, Tseung-Yuen; Chen, Sheng-Chi; Lin, Jian-Yang |
| 國立交通大學 |
2014-12-08T15:10:28Z |
Improvement of Charge-Storage Characteristics of Mo Nanocrystal Memory by Double-Layer Structure
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Lin, Chao-Cheng; Chang, Ting-Chang; Tu, Chun-Hao; Chen, Wei-Ren; Feng, Li-Wen; Sze, Simon M.; Tseng, Tseung-Yuen; Chen, Sheng-Chi; Lin, Jian-Yang |
| 國立交通大學 |
2014-12-08T15:10:28Z |
Enhancement of NiSi-Based Nanocrystal Formation by Incorporating Ge Elements for Nonvolatile Memory Devices
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Hu, Chih-Wei; Chang, Ting-Chang; Tu, Chun-Hao; Chiang, Cheng-Neng; Lin, Chao-Cheng; Lee, Sheng-Wei; Chang, Chun-Yen; Sze, Simon M.; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:10:19Z |
Charge Storage Characteristics of Mo Nanocrystal Memory Influenced by Ammonia Plasma Treatment
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Lin, Chao-Cheng; Chang, Ting-Chang; Tu, Chun-Hao; Chen, Wei-Ren; Hu, Chih-Wei; Sze, Simon M.; Tseng, Tseung-Yuen; Chen, Sheng-Chi; Lin, Jian-Yang |
| 國立交通大學 |
2014-12-08T15:10:01Z |
NiSiGe nanocrystals for nonvolatile memory devices
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Hu, Chih-Wei; Chang, Ting-; Tu, Chun-Hao; Chiang, Cheng-Neng; Lin, Chao-Cheng; Sze, Simon M.; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:10:01Z |
Improved reliability of Mo nanocrystal memory with ammonia plasma treatment
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Lin, Chao-Cheng; Chang, Ting-Chang; Tu, Chun-Hao; Chen, Wei-Ren; Hu, Chih-Wei; Sze, Simon M.; Tseng, Tseung-Yuen; Chen, Sheng-Chi; Lin, Jian-Yang |
| 國立交通大學 |
2014-12-08T15:09:54Z |
Electrical and optical properties of ZnO:Al thin films grown by magnetron sputtering
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Bai, Shr-Nan; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:09:47Z |
Cobalt nanodots formed by annealing the CoSiO layer for the application of the nonvolatile memory
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Hu, Chih-Wei; Chang, Ting-Chang; Tu, Chun-Hao; Shueh, Pei-Kun; Lin, Chao-Cheng; Sze, Simon M.; Tseng, Tseung-Yuen; Chen, Min-Chen |
| 國立交通大學 |
2014-12-08T15:09:45Z |
Nanotip fabrication of zinc oxide nanorods and their enhanced field emission properties
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Yao, I-Chuan; Lin, Pang; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:09:14Z |
The structural and optical properties of ZnO nanowire arrays prepared by hydrothermal synthesis method
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Bai, Shr-Nan; Tseng, Tseung-Yuen |
Showing items 296-320 of 359 (15 Page(s) Totally)
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