|
|
Taiwan Academic Institutional Repository >
Browse by Author
|
"tseng tseung yuen"
Showing items 36-60 of 359 (15 Page(s) Totally)
<< < 1 2 3 4 5 6 7 8 9 10 > >>
View [10|25|50] records per page
| 國立交通大學 |
2019-04-03T06:39:55Z |
Overview of Selector Devices for 3-D Stackable Cross Point RRAM Arrays
|
Aluguri, Rakesh; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T06:04:21Z |
Excellent High Temperature Retention of TiOXNV ReRAM by Interfacial Layer Engineering
|
Lin, Yu-Hsuan; Lee, Dai-Ying; Wang, Chao-Hung; Lee, Ming-Hsiu; Ho, Yung-Han; Lai, Erh-Kun; Chiang, Kuang-Hao; Lung, Hsiang-Lan; Wang, Keh-Chung; Tseng, Tseung-Yuen; Lu, Chih-Yuan |
| 國立交通大學 |
2019-04-02T06:01:05Z |
Electrical properties and fatigue behaviors of ZrO2 resistive switching thin films
|
Lin, Chih-Yang; Wang, Sheng-Yi; Lee, Dai-Ying; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T06:01:04Z |
Highly sensitive nitric oxide gas sensor based on ZnO-nanorods vertical resistor operated at room temperature
|
Singh, Pragya; Hu, Li-Lun; Zan, Hsiao-Wen; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T06:00:56Z |
Effect of thermal treatment on resistive switching characteristics in Pt/Ti/Al2O3/Pt devices
|
Lin, Chih-Yang; Lee, Dai-Ying; Wang, Sheng-Yi; Lin, Chun-Chieh; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T06:00:56Z |
Reproducible resistive switching behavior in sputtered CeO2 polycrystalline films
|
Lin, Chih-Yang; Lee, Dai-Ying; Wang, Sheng-Yi; Lin, Chun-Chieh; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T06:00:28Z |
Effects of Vanadium Doping on Resistive Switching Characteristics and Mechanisms of SrZrO3-Based Memory Films
|
Lin, Meng-Han; Wu, Ming-Chi; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T06:00:27Z |
Hexanoyl chitosan/ENR25 blend polymer electrolyte system for electrical double layer capacitor
|
Winie, Tan; Jamal, Asheila; Saaid, Farish Irfal; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T06:00:26Z |
Controllable oxygen vacancies to enhance resistive switching performance in a ZrO2-based RRAM with embedded Mo layer
|
Wang, Sheng-Yu; Lee, Dai-Ying; Huang, Tai-Yuen; Wu, Jia-Woei; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T06:00:19Z |
Formation of the distributed NiSiGe nanocrystals nonvolatile memory formed by rapidly annealing in N-2 and O-2 ambient
|
Hu, Chih-Wei; Chang, Ting-Chang; Tu, Chun-Hao; Chiang, Cheng-Neng; Lin, Chao-Cheng; Chen, Min-Chen; Chang, Chun-Yen; Sze, Simon M.; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T06:00:07Z |
Effects of Ti top electrode thickness on the resistive switching behaviors of rf-sputtered ZrO2 memory films
|
Wang, Sheng-Yu; Lee, Dai-Ying; Tseng, Tseung-Yuen; Lin, Chih-Yang |
| 國立交通大學 |
2019-04-02T06:00:07Z |
Characteristics of SrTiO3 Insulated Layer in SBT Ferroelectric Thin Films
|
Chou, Hsiu-Yu; Lee, En-Ko; Lin, Meng-Han; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T05:59:51Z |
High Device Yield of Resistive Switching Characteristics in Oxygen-Annealed SrZrO3 Memory Devices
|
Lin, Meng-Han; Wu, Ming-Chi; Huang, Yi-Han; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T05:59:49Z |
H2O-Assisted O-2 Adsorption in Sol-Gel Derived Amorphous Indium Gallium Zinc Oxide Thin Film Transistors
|
Chung, Wan-Fang; Chang, Ting-Chang; Li, Hung-Wei; Chen, Shih-Ching; Chen, Yu-Chun; Tseng, Tseung-Yuen; Tai, Ya-Hsiang |
| 國立交通大學 |
2019-04-02T05:59:47Z |
Switching Failure Mechanism in Zinc Peroxide-Based Programmable Metallization Cell
|
Simanjuntak, Firman Mangasa; Chandrasekaran, Sridhar; Lin, Chun-Chieh; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T05:59:41Z |
Multilevel resistive switching in Ti/CuxO/Pt memory devices
|
Wang, Sheng-Yu; Huang, Chin-Wen; Lee, Dai-Ying; Tseng, Tseung-Yuen; Chang, Ting-Chang |
| 國立交通大學 |
2019-04-02T05:59:39Z |
Influence of H2O Dipole on Subthreshold Swing of Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors
|
Chung, Wan-Fang; Chang, Ting-Chang; Li, Hung-Wei; Chen, Chi-Wen; Chen, Yu-Chun; Chen, Shih-Ching; Tseng, Tseung-Yuen; Tai, Ya-Hsiang |
| 國立交通大學 |
2019-04-02T05:59:09Z |
Formation of Core/Shell-Type ZnO/CeO2 Nanorods and CeO2 Nanotube Arrays by Aqueous Synthesis and Wet-Etching
|
Chen, Yung Sheng; Tseng, Tseung Yuen |
| 國立交通大學 |
2019-04-02T05:59:08Z |
Characteristics of flexible and transparent Eu2O3 resistive switching memory at high bending condition
|
Aluguri, R.; Sailesh, R.; Kumar, D.; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T05:59:04Z |
Nitric Acid Oxidized ZrO2 as the Tunneling Oxide of Cobalt Silicide Nanocrystal Memory Devices
|
Hu, Chih-Wei; Chang, Ting-Chang; Tu, Chun-Hao; Chen, Yang-Dong; Lin, Chao-Cheng; Chen, Min-Chen; Lin, Jian-Yang; Sze, Simon M.; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T05:59:04Z |
Investigation for coexistence of dual resistive switching characteristics in DyMn2O5 memory devices
|
Tsai, Yu-Ting; Chang, Ting-Chang; Huang, Wei-Li; Huang, Chih-Wen; Syu, Yong-En; Chen, Shih-Cheng; Sze, Simon M.; Tsai, Ming-Jinn; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T05:58:59Z |
Performance Impacts of Analog ReRAM Non-ideality on Neuromorphic Computing
|
Lin, Yu-Hsuan; Wang, Chao-Hung; Lee, Ming-Hsiu; Lee, Dai-Ying; Lin, Yu-Yu; Lee, Feng-Min; Lung, Hsiang-Lan; Wang, Keh-Chung; Tseng, Tseung-Yuen; Lu, Chih-Yuan |
| 國立交通大學 |
2019-04-02T05:58:59Z |
Improved resistive switching properties of Ti/ZrO2/Pt memory devices for RRAM application
|
Wang, Sheng-Yu; Tsai, Chen-Han; Lee, Dai-Ying; Lin, Chih-Yang; Lin, Chun-Chieh; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T05:58:58Z |
One Bipolar Selector-One Resistor for Flexible Crossbar Memory Applications
|
Kumar, Dayanand; Aluguri, Rakesh; Chand, Umesh; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T05:58:57Z |
Low-Power and Highly Reliable Multilevel Operation in ZrO2 1T1R RRAM
|
Wu, Ming-Chi; Lin, Yi-Wei; Jang, Wen-Yueh; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
Showing items 36-60 of 359 (15 Page(s) Totally)
<< < 1 2 3 4 5 6 7 8 9 10 > >>
View [10|25|50] records per page
|
