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Showing items 81-105 of 359  (15 Page(s) Totally)
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Institution Date Title Author
國立交通大學 2018-08-21T05:54:29Z Ultra-Shallow Junction Formation by Monolayer Doping Process in Single Crystalline Si and Ge for Future CMOS Devices Chuang, Shang-Shiun; Cho, Ta-Chun; Sung, Po-Jung; Kao, Kuo-Hsing; Chen, Henry J. H.; Lee, Yao-Jen; Current, Michael I.; Tseng, Tseung-Yuen
國立交通大學 2018-08-21T05:54:29Z Preface Tuan, Wei-Hsing; Chou, Chen-Chia; Tseng, Tseung-Yuen; Wang, Sea-Fue; Tseng, Wen-Jea; Shieh, Jay; Huang, Chi-Yuen; Chen, Jhewn-Kuang
國立交通大學 2018-08-21T05:54:28Z Peroxide induced volatile and non-volatile switching behavior in ZnO-based electrochemical metallization memory cell Simanjuntak, Firman Mangasa; Chandrasekaran, Sridhar; Pattanayak, Bhaskar; Lin, Chun-Chieh; Tseng, Tseung-Yuen
國立交通大學 2018-08-21T05:54:23Z Ternary Au/ZnO/rGO nanocomposites electrodes for high performance electrochemical storage devices Chaudhary, Manchal; Doong, Ruey-an; Kumar, Nagesh; Tseng, Tseung Yuen
國立交通大學 2018-08-21T05:54:17Z Carbon Nanotube/Nitrogen-Doped Reduced Graphene Oxide Nanocomposites and Their Application in Supercapacitors Yang, Chih-Chieh; Tsai, Meng-Han; Huang, Chun-Wei; Yen, Po-Jen; Pan, Chien-Chung; Wu, Wen-Wei; Wei, Kung-Hwa; Dung, Lan-Rong; Tseng, Tseung-Yuen
國立交通大學 2018-08-21T05:54:10Z Fast-IV Measurement Investigation of the Role of TiN Gate Nitrogen Concentration on Bulk Traps in HfO2 Layer in p-MOSFETs Lu, Ying-Hsin; Chang, Ting-Chang; Liao, Jih-Chien; Chen, Li-Hui; Lin, Yu-Shan; Chen, Ching-En; Liu, Kuan-Ju; Liu, Xi-Wen; Lin, Chien-Yu; Lien, Chen-Hsin; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Yen, Wei-Ting
國立交通大學 2018-08-21T05:54:05Z Enhancement of resistive switching properties in nitride based CBRAM device by inserting an Al2O3 thin layer Kumar, Dayanand; Aluguri, Rakesh; Chand, Umesh; Tseng, Tseung-Yuen
國立交通大學 2018-08-21T05:53:36Z Controlled resistive switching characteristics of ZrO2-based electrochemical metallization memory devices by modifying the thickness of the metal barrier layer Chandrasekaran, Sridhar; Simanjuntak, Firman Mangasa; Tseng, Tseung-Yuen
國立交通大學 2018-08-21T05:53:36Z Role of Al2O3 thin layer on improving the resistive switching properties of Ta5Si3-based conductive bridge random accesses memory device Kumar, Dayanand; Aluguri, Rakesh; Chand, Umesh; Tseng, Tseung-Yuen
國立交通大學 2018-08-21T05:53:18Z Conductive bridge random access memory characteristics of SiCN based transparent device due to indium diffusion Kumar, Dayanand; Aluguri, Rakesh; Chand, Umesh; Tseng, Tseung-Yuen
國立交通大學 2018-08-21T05:53:14Z An ultra-compact blackbody using electrophoretic deposited carbon nanotube films Lin, Albert; Yang, Chien-Chih; Parashar, Parag; Lin, Chien-Yung; Jian, Ding Rung; Huang, Wei-Ming; Huang, Yi-Wen; Fu, Sze Ming; Zhong, Yan Kai; Tseng, Tseung Yuen
國立交通大學 2018-08-21T05:53:11Z A Collective Study on Modeling and Simulation of Resistive Random Access Memory Panda, Debashis; Sahu, Paritosh Piyush; Tseng, Tseung Yuen
國立交通大學 2018-08-21T05:53:08Z Facile synthesis of mesoporous NiFe2O4/CNTs nanocomposite cathode material for high performance asymmetric pseudocapacitors Kumar, Nagesh; Kumar, Amit; Huang, Guan-Min; Wu, Wen-Wei; Tseng, Tseung Yuen
國立交通大學 2018-08-21T05:52:56Z Endurance improvement and resistance stabilization of transparent multilayer resistance switching devices with oxygen deficient WOx layer and heat dissipating AlN buffer layer Lin, Yu-Hsuan; Huang, Ding-Chiuan; Lou, Jen-Chung; Tseng, Tseung-Yuen
國立交通大學 2018-08-21T05:52:55Z Dynamic observation of reversible lithium storage phenomena in hybrid supercapacitor devices Huang, Guan-Min; Tsai, Tsung-Chun; Huang, Chun-Wei; Kumar, Nagesh; Tseng, Tseung-Yuen; Wu, Wen-Wei
國立交通大學 2018-08-21T05:52:54Z Role of nanorods insertion layer in ZnO-based electrochemical metallization memory cell Simanjuntak, Firman Mangasa; Singh, Pragya; Chandrasekaran, Sridhar; Lumbantoruan, Franky Juanda; Yang, Chih-Chieh; Huang, Chu-Jie; Lin, Chun-Chieh; Tseng, Tseung-Yuen
國立交通大學 2018-08-21T05:52:48Z Effect of barrier layer on switching polarity of ZrO2-based conducting-bridge random access memory Chandrasekaran, Sridhar; Simanjuntak, Firman Mangasa; Tsai, Tsung-Ling; Lin, Chun-An; Tseng, Tseung-Yuen
國立交通大學 2018-01-24T07:40:31Z 高導電度膠態電解液於固態超級電容之應用 林皓陽; 曾俊元; Lin, Hao-Yang; Tseng, Tseung-Yuen
國立交通大學 2018-01-24T07:40:30Z 金屬氧化物選擇器搭配氧化鋯電阻式記憶體之特性研究 李承鴻; 曾俊元; Lee, Cheng-Hung; Tseng,Tseung-Yuen
國立交通大學 2018-01-24T07:40:30Z 氧化層雙向選擇器於電阻式記憶體之應用 楊敦智; 曾俊元; Yang, Tun-Chih; Tseng, Tseung-Yuen
國立交通大學 2018-01-24T07:40:30Z 單層氧化鎂選擇器應用於電阻式記憶體之研究 鄔晏澤; 曾俊元; Wu, Yan-ze; Tseng, Tseung-Yuen
國立交通大學 2018-01-24T07:38:30Z 納米電阻式記憶體導體特點的分析方法 白達磊; 曾俊元; berco, dan; Tseng,Tseung-Yuen
國立交通大學 2018-01-24T07:38:03Z 藉由電極調整及摻雜提升氧化鋅透明性電阻式記憶體電阻轉態特性 費玉滿; 曾俊元; 韋光華; FIRMAN, MANGASA SIMANJUNTAK; Tseng, Tseung-Yuen; Wei, Kung-Hwa
國立交通大學 2018-01-24T07:37:07Z 前瞻式金氧半場效電晶體之隨機電報訊號分析與熱載子劣化研究 陳慶恩; 曾俊元; 張鼎張; Chen, Ching-En; Tseng, Tseung-Yuen; Chang, Ting-Chang
國立交通大學 2018-01-24T07:37:01Z 利用碲為源層及增強阻障特性於氮化矽金屬導電橋接電阻式記憶體之可靠度優化研究 戴光駿; 曾俊元; Dai, Guang-Jyun; Tseng, Tseung-Yuen

Showing items 81-105 of 359  (15 Page(s) Totally)
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