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机构 日期 题名 作者
國立交通大學 2014-12-08T15:24:05Z Analysis of an anomalous hump in gate current after dynamic negative bias stress in HfxZr1-xO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors Ho, Szu-Han; Chang, Ting-Chang; Wu, Chi-Wei; Lo, Wen-Hung; Chen, Ching-En; Tsai, Jyun-Yu; Luo, Hung-Ping; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Sze, Simon M.
國立交通大學 2014-12-08T15:23:56Z "Field Emission Properties and Reliability of ZnO Nanorod, Nanopagoda, and Nanotip Current Emitters" Yao, I. -Chuan; Lin, Pang; Tseng, Tseung-Yuen
國立交通大學 2014-12-08T15:23:55Z Electrical Properties and Reliability of ZnO-Based Nanorod Current Emitters Yao, I-Chuan; Lin, Pang; Huang, Sheng-He; Tseng, Tseung-Yuen
國立交通大學 2014-12-08T15:23:40Z A study on low-power, nanosecond operation and multilevel bipolar resistance switching in Ti/ZrO2/Pt nonvolatile memory with 1T1R architecture Wu, Ming-Chi; Jang, Wen-Yueh; Lin, Chen-Hsi; Tseng, Tseung-Yuen
國立交通大學 2014-12-08T15:23:36Z Unipolar Resistive Switching Characteristics of a ZrO2 Memory Device With Oxygen Ion Conductor Buffer Layer Lee, Dai-Ying; Tseng, Tseung-Yuen
國立交通大學 2014-12-08T15:23:05Z Effect of Top Electrode Material on Resistive Switching Characteristics in MnO2 Nonvolatile Memory Devices Tsai, Yu-Ting; Chang, Ting-Chang; Lin, Chao-Cheng; Chiang, Lan-Shin; Chen, Shih-Cheng; Sze, Simon M.; Tseng, Tseung-Yuen
國立交通大學 2014-12-08T15:22:53Z Bottom Electrode Modification of ZrO2 Resistive Switching Memory Device with Au Nanodots Lee, Dai-Ying; Yao, I-Chuan; Tseng, Tseung-Yuen
國立交通大學 2014-12-08T15:22:51Z Resistive switching characteristics of nickel silicide layer embedded HfO2 film Panda, Debashis; Huang, Chun-Yang; Tseng, Tseung-Yuen
國立交通大學 2014-12-08T15:22:41Z ZnO nanorods grown on polymer substrates as UV photodetectors Yao, I-Chuan; Tseng, Tseung-Yuen; Lin, Pang
國立交通大學 2014-12-08T15:22:32Z Characteristics of SrTiO(3) Insulated Layer in SBT Ferroelectric Thin Films Chou, Hsiu-Yu; Lee, En-Ko; Lin, Meng-Han; Tseng, Tseung-Yuen

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