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"tseng tseung yuen"的相关文件
显示项目 46-70 / 359 (共15页)
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| 國立交通大學 |
2019-04-02T06:00:07Z |
Effects of Ti top electrode thickness on the resistive switching behaviors of rf-sputtered ZrO2 memory films
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Wang, Sheng-Yu; Lee, Dai-Ying; Tseng, Tseung-Yuen; Lin, Chih-Yang |
| 國立交通大學 |
2019-04-02T06:00:07Z |
Characteristics of SrTiO3 Insulated Layer in SBT Ferroelectric Thin Films
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Chou, Hsiu-Yu; Lee, En-Ko; Lin, Meng-Han; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T05:59:51Z |
High Device Yield of Resistive Switching Characteristics in Oxygen-Annealed SrZrO3 Memory Devices
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Lin, Meng-Han; Wu, Ming-Chi; Huang, Yi-Han; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T05:59:49Z |
H2O-Assisted O-2 Adsorption in Sol-Gel Derived Amorphous Indium Gallium Zinc Oxide Thin Film Transistors
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Chung, Wan-Fang; Chang, Ting-Chang; Li, Hung-Wei; Chen, Shih-Ching; Chen, Yu-Chun; Tseng, Tseung-Yuen; Tai, Ya-Hsiang |
| 國立交通大學 |
2019-04-02T05:59:47Z |
Switching Failure Mechanism in Zinc Peroxide-Based Programmable Metallization Cell
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Simanjuntak, Firman Mangasa; Chandrasekaran, Sridhar; Lin, Chun-Chieh; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T05:59:41Z |
Multilevel resistive switching in Ti/CuxO/Pt memory devices
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Wang, Sheng-Yu; Huang, Chin-Wen; Lee, Dai-Ying; Tseng, Tseung-Yuen; Chang, Ting-Chang |
| 國立交通大學 |
2019-04-02T05:59:39Z |
Influence of H2O Dipole on Subthreshold Swing of Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors
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Chung, Wan-Fang; Chang, Ting-Chang; Li, Hung-Wei; Chen, Chi-Wen; Chen, Yu-Chun; Chen, Shih-Ching; Tseng, Tseung-Yuen; Tai, Ya-Hsiang |
| 國立交通大學 |
2019-04-02T05:59:09Z |
Formation of Core/Shell-Type ZnO/CeO2 Nanorods and CeO2 Nanotube Arrays by Aqueous Synthesis and Wet-Etching
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Chen, Yung Sheng; Tseng, Tseung Yuen |
| 國立交通大學 |
2019-04-02T05:59:08Z |
Characteristics of flexible and transparent Eu2O3 resistive switching memory at high bending condition
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Aluguri, R.; Sailesh, R.; Kumar, D.; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T05:59:04Z |
Nitric Acid Oxidized ZrO2 as the Tunneling Oxide of Cobalt Silicide Nanocrystal Memory Devices
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Hu, Chih-Wei; Chang, Ting-Chang; Tu, Chun-Hao; Chen, Yang-Dong; Lin, Chao-Cheng; Chen, Min-Chen; Lin, Jian-Yang; Sze, Simon M.; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T05:59:04Z |
Investigation for coexistence of dual resistive switching characteristics in DyMn2O5 memory devices
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Tsai, Yu-Ting; Chang, Ting-Chang; Huang, Wei-Li; Huang, Chih-Wen; Syu, Yong-En; Chen, Shih-Cheng; Sze, Simon M.; Tsai, Ming-Jinn; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T05:58:59Z |
Performance Impacts of Analog ReRAM Non-ideality on Neuromorphic Computing
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Lin, Yu-Hsuan; Wang, Chao-Hung; Lee, Ming-Hsiu; Lee, Dai-Ying; Lin, Yu-Yu; Lee, Feng-Min; Lung, Hsiang-Lan; Wang, Keh-Chung; Tseng, Tseung-Yuen; Lu, Chih-Yuan |
| 國立交通大學 |
2019-04-02T05:58:59Z |
Improved resistive switching properties of Ti/ZrO2/Pt memory devices for RRAM application
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Wang, Sheng-Yu; Tsai, Chen-Han; Lee, Dai-Ying; Lin, Chih-Yang; Lin, Chun-Chieh; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T05:58:58Z |
One Bipolar Selector-One Resistor for Flexible Crossbar Memory Applications
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Kumar, Dayanand; Aluguri, Rakesh; Chand, Umesh; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T05:58:57Z |
Low-Power and Highly Reliable Multilevel Operation in ZrO2 1T1R RRAM
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Wu, Ming-Chi; Lin, Yi-Wei; Jang, Wen-Yueh; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T05:58:56Z |
Nitric Acid Oxidation of Si for the Tunneling Oxide Application on CoSi2 Nanocrystals Nonvolatile Memory
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Hu, Chih-Wei; Chang, Ting-Chang; Tu, Chun-Hao; Chen, Yang-Dong; Lin, Chao-Cheng; Chen, Min-Chen; Lin, Jian-Yang; Sze, Simon M.; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T05:58:54Z |
High Density Ni Nanocrystals Formed by Coevaporating Ni and SiO2 Pellets for the Nonvolatile Memory Device Application
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Hu, Chih-Wei; Chang, Ting-Chang; Tu, Chun-Hao; Huang, Yu-Hao; Lin, Chao-Cheng; Chen, Min-Chen; Huang, Fon-Shan; Sze, Simon M.; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T05:58:50Z |
The impact of TiW barrier layer thickness dependent transition from electro-chemical metallization memory to valence change memory in ZrO2-based resistive switching random access memory devices
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Chandrasekaran, Sridhar; Simanjuntak, Firman Mangasa; Aluguri, Rakesh; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T05:58:50Z |
Resistive switching behavior of Ga doped ZnO-nanorods film conductive bridge random access memory
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Singh, Pragya; Simanjuntak, Firman Mangasa; Kumar, Amit; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T05:58:42Z |
Impact of barrier layer on HfO2-based conductive bridge random access memory
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Lin, Chun-An; Huang, Chu-Jie; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T05:58:38Z |
Resistive Switching Characteristics and Reliability of SiNx-Based Conductive Bridge Random Access Memory
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Lin, Chun-An; Dai, Guang-Jyun; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T05:58:26Z |
Ti-Induced Recovery Phenomenon of Resistive Switching in ZrO2 Thin Films
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Lee, Dai-Ying; Wang, Sheng-Yu; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T05:58:14Z |
Field Emission Properties and Reliability of ZnO Nanorod, Nanopagoda, and Nanotip Current Emitters
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Yao, I. -Chuan; Lin, Pang; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T05:58:11Z |
Hydrogen Gas Sensors Using ZnO-SnO2 Core-Shell Nanostructure
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Yao, I-Chuan; Lin, Pang; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T05:58:00Z |
Second Phase and Defect Formation in Bi0.5Na0.5-xKxTiO3 Ceramics
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Chen, Pin-Yi; Chou, Chen-Chia; Tseng, Tseung-Yuen; Chen, Haydn |
显示项目 46-70 / 359 (共15页)
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