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"tseng tseung yuen"的相關文件
顯示項目 141-150 / 359 (共36頁)
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| 國立交通大學 |
2015-12-02T02:59:37Z |
Mechanism of Nonlinear Switching in HfO2-Based Crossbar RRAM With Inserting Large Bandgap Tunneling Barrier Layer
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Chand, Umesh; Huang, Kuan-Chang; Huang, Chun-Yang; Tseng, Tseung-Yuen |
| 國立交通大學 |
2015-12-02T02:59:35Z |
Impact of Post-Oxide Deposition Annealing on Resistive Switching in HfO2-Based Oxide RRAM and Conductive-Bridge RAM Devices
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Tsai, Tsung-Ling; Chang, Hsiang-Yu; Jiang, Fa-Shen; Tseng, Tseung-Yuen |
| 國立交通大學 |
2015-12-02T02:59:33Z |
A Method to Determine the Located Region of Lateral Trap Position by Analysis of Three-Level Random Telegraph Signals in n-MOSFETs
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Chen, Ching-En; Chang, Ting-Chang; You, Bo; Tsai, Jyun-Yu; Lo, Wen-Hung; Ho, Szu-Han; Liu, Kuan-Ju; Lu, Ying-Hsin; Hung, Yu-Ju; Tseng, Tseung-Yuen; Wu, James; Tsai, Wei-Kung; Chenge, Kuo-Yu; Syu, Yong-En |
| 國立交通大學 |
2015-12-02T02:59:22Z |
Enhancing the memory window of AZO/ZnO/ITO transparent resistive switching devices by modulating the oxygen vacancy concentration of the top electrode
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Simanjuntak, Firman Mangasa; Panda, Debashis; Tsai, Tsung-Ling; Lin, Chun-An; Wei, Kung-Hwa; Tseng, Tseung-Yuen |
| 國立交通大學 |
2015-12-02T02:59:18Z |
Enhanced switching uniformity in AZO/ZnO1-x/ITO transparent resistive memory devices by bipolar double forming
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Simanjuntak, Firman Mangasa; Panda, Debashis; Tsai, Tsung-Ling; Lin, Chun-An; Wei, Kung-Hwa; Tseng, Tseung-Yuen |
| 國立交通大學 |
2015-12-02T02:59:14Z |
The Impact of Pre/Post-metal Deposition Annealing on Negative-Bias-Temperature Instability in HfO2 Stack p-Channel Metal-Oxide-Semiconductor Field Effect Transistors
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Lu, Ying-Hsin; Chang, Ting-Chang; Ho, Szu-Han; Chen, Ching-En; Tsai, Jyun-Yu; Liu, Kuan-Ju; Liu, Xi-Wen; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Lu, Ching-Sen |
| 國立交通大學 |
2015-12-02T02:59:09Z |
Resistive Switching Characteristics of WO3/ZrO2 Structure With Forming-Free, Self-Compliance, and Submicroampere Current Operation
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Tsai, Tsung-Ling; Lin, Yu-Hsuan; Tseng, Tseung-Yuen |
| 國立交通大學 |
2015-11-26T01:05:50Z |
一維氧化鋅奈米結構之製備及其應用
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姚奕全; Yao, I-Chuan; 曾俊元; 林鵬; Tseng, Tseung-Yuen; Lin, Pang |
| 國立交通大學 |
2015-11-26T00:57:07Z |
氧化鋅摻雜鈷應用於透明電阻式記憶體之電阻開關特性研究
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Om Kumar Prasad; Om Prasad; 曾俊元; Tseng , Tseung-Yuen |
| 國立交通大學 |
2015-11-26T00:56:41Z |
奈米碳管/氮摻雜石墨烯複合電極材料於超級電容器之應用
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蔡孟翰; Tsai, Meng-Han; 曾俊元; Tseng, Tseung-Yuen |
顯示項目 141-150 / 359 (共36頁)
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