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Showing items 121-145 of 359 (15 Page(s) Totally)
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| 國立交通大學 |
2017-04-21T06:55:16Z |
A comprehensive study of bipolar operation in resistive switching memory devices
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Berco, Dan; Tseng, Tseung-Yuen |
| 國立交通大學 |
2017-04-21T06:55:13Z |
Impacts of Co doping on ZnO transparent switching memory device characteristics
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Simanjuntak, Firman Mangasa; Prasad, Om Kumar; Panda, Debashis; Lin, Chun-An; Tsai, Tsung-Ling; Wei, Kung-Hwa; Tseng, Tseung-Yuen |
| 國立交通大學 |
2017-04-21T06:49:25Z |
Excellent Resistance Variability Control of WOx ReRAM by a Smart Writing Algorithm
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Lin, Yu-Hsuan; Wu, Jau-Yi; Lee, Ming-Hsiu; Wang, Tien-Yen; Lin, Yu-Yu; Lee, Feng-Ming; Lee, Dai-Ying; Lai, Erh-Kun; Chiang, Kuang-Hao; Lung, Hsiang-Lan; Hsieh, Kuang-Yeu; Tseng, Tseung-Yuen; Lu, Chih-Yuan |
| 國立交通大學 |
2017-04-21T06:49:01Z |
Fabrication of Flexible Electrochromic Devices Based on Tungsten Trioxide Nanobundles
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Chen, Chih Hao; Tseng, Tseung-Yuen; Hung, Chung Jung |
| 國立交通大學 |
2017-04-21T06:48:32Z |
Effects of Second Phase and Defect on Electrical Properties in Bi0.5Na0.5-xKxTiO3 Lead-Free Piezoelectric Ceramics
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Chen, Pin Yi; Chen, Cheng Sao; Chou, Chen-Chia; Tseng, Tseung-Yuen; Chen, Haydn |
| 國立交通大學 |
2017-04-21T06:48:19Z |
Diamond-shaped Ge and Ge0.9Si0.1 Gate-All-Around Nanowire FETs with Four {111} Facets by Dry Etch Technology
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Lee, Yao-Jen; Hou, Fu-Ju; Chuang, Shang-Shiun; Hsueh, Fu-Kuo; Kao, Kuo-Hsing; Sung, Po-Jung; Yuan, Wei-You; Yao, Jay-Yi; Lu, Yu-Chi; Lin, Kun-Lin; Wu, Chien-Ting; Chen, Hisu-Chih; Chen, Bo-Yuan; Huang, Guo-Wei; Chen, Henry J. H.; Li, Jiun-Yun; Li, Yiming; Samukawa, Seiji; Chao, Tien-Sheng; Tseng, Tseung-Yuen; Wu, Wen-Fa; Hou, Tuo-Hung; Yeh, Wen-Kuan |
| 臺大學術典藏 |
2017 |
Preface
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Tuan, Wei-Hsing; Chou, Chen-Chia; Tseng, Tseung-Yuen; Wang, Sea-Fue; Tseng, Wen-Jea; Shieh, Jay; Huang, Chi-Yuen; Chen, Jhewn-Kuang; TZONG-LIN JAY SHIEH |
| 國立成功大學 |
2016-12 |
Effects of fabrication method on defects induced by nitrogen diffusion to the hafnium oxide layer in metal-oxide-semiconductor field effect transistors
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Lu, Ying-Hsin; Chang, Ting-Chang; Ho, Szu-Han; Chen, Ching-En; Tsai, Jyun-Yu; Liu, Kuan-Ju; Liu, Xi-Wen; Lin, Chien-yu; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Yen, Wei-Ting |
| 國立成功大學 |
2016-04-25 |
Trap state passivation improved hot-carrier instability by zirconium-doping in hafnium oxide in a nanoscale n-metal-oxide semiconductor-field effect transistors with high-k/metal gate
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Liu, Hsi-Wen; Chang, Ting-Chang; Tsai, Jyun-Yu; Chen, Ching-En; Liu, Kuan-Ju; Lu, Ying-Hsin; Lin, Chien-Yu; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Ye, Yi-Han |
| 國立成功大學 |
2016-04 |
Analysis of Oxide Trap Characteristics by Random Telegraph Signals in nMOSFETs With HfO2-Based Gate Dielectrics
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Chen, Ching-En; Chang, Ting-Chang; You, Bo; Tsai, Jyun-Yu; Lo, Wen-Hung; Ho, Szu-Han; Liu, Kuan-Ju; Lu, Ying-Hsin; Liu, Xi-Wen; Hung, Yu-Ju; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Lu, Ching-Sen |
| 國立交通大學 |
2016-03-29T00:01:12Z |
Li2MnSiO4與奈米碳管及石墨烯複合材料於非對稱性超級電容之研究
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曾俊元; TSENG TSEUNG-YUEN |
| 國立交通大學 |
2016-03-29T00:01:09Z |
前瞻高能量超高電容器整合製程及其應用平台開發(III)
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曾俊元; TSENG TSEUNG-YUEN |
| 國立交通大學 |
2016-03-28T08:17:41Z |
前瞻高能量超高電容器整合製程及其應用平台開發( II )
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曾俊元; TSENG TSEUNG-YUEN |
| 國立交通大學 |
2016-03-28T08:17:36Z |
錳氧化物奈米複合材料與新穎三維碳奈米結構修飾電極製備及其應用於可撓式非對稱型超高電容器系統之研究
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曾俊元; TSENG TSEUNG-YUEN |
| 國立交通大學 |
2016-03-28T08:17:36Z |
新穎透明電阻式記憶體元件於高密度與低功率消耗的非揮發性記憶體應用
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曾俊元; TSENG TSEUNG-YUEN |
| 國立交通大學 |
2016-03-28T08:17:17Z |
Li2MnSiO4與奈米碳管及石墨烯複合材料於非對稱性超級電容之研究
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曾俊元; TSENG TSEUNG-YUEN |
| 國立交通大學 |
2016-03-28T00:04:27Z |
A stochastic simulation method for the assessment of resistive random access memory retention reliability
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Berco, Dan; Tseng, Tseung-Yuen |
| 國立交通大學 |
2016-03-28T00:04:16Z |
Fabrication of carbon nanotube/cobalt oxide nanocomposites via electrophoretic deposition for supercapacitor electrodes
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Kumar, Nagesh; Yu, Yun-Cheng; Lu, Yi Hsuan; Tseng, Tseung Yuen |
| 國立交通大學 |
2016-03-28T00:04:10Z |
Metal induced crystallized poly-Si-based conductive bridge resistive switching memory device with one transistor and one resistor architecture
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Chand, Umesh; Huang, Chun-Yang; Kumar, Dayanand; Tseng, Tseung-Yuen |
| 國立交通大學 |
2015-12-04T07:03:16Z |
HIGH ENERGY DENSITY ASYMMETRIC PSEUDOCAPACITOR AND METHOD OF MAKING THE SAME
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Tseng Tseung-Yuen; Hung Chung-Jung; Lin Pang |
| 國立交通大學 |
2015-12-02T02:59:37Z |
Mechanism of Nonlinear Switching in HfO2-Based Crossbar RRAM With Inserting Large Bandgap Tunneling Barrier Layer
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Chand, Umesh; Huang, Kuan-Chang; Huang, Chun-Yang; Tseng, Tseung-Yuen |
| 國立交通大學 |
2015-12-02T02:59:35Z |
Impact of Post-Oxide Deposition Annealing on Resistive Switching in HfO2-Based Oxide RRAM and Conductive-Bridge RAM Devices
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Tsai, Tsung-Ling; Chang, Hsiang-Yu; Jiang, Fa-Shen; Tseng, Tseung-Yuen |
| 國立交通大學 |
2015-12-02T02:59:33Z |
A Method to Determine the Located Region of Lateral Trap Position by Analysis of Three-Level Random Telegraph Signals in n-MOSFETs
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Chen, Ching-En; Chang, Ting-Chang; You, Bo; Tsai, Jyun-Yu; Lo, Wen-Hung; Ho, Szu-Han; Liu, Kuan-Ju; Lu, Ying-Hsin; Hung, Yu-Ju; Tseng, Tseung-Yuen; Wu, James; Tsai, Wei-Kung; Chenge, Kuo-Yu; Syu, Yong-En |
| 國立交通大學 |
2015-12-02T02:59:22Z |
Enhancing the memory window of AZO/ZnO/ITO transparent resistive switching devices by modulating the oxygen vacancy concentration of the top electrode
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Simanjuntak, Firman Mangasa; Panda, Debashis; Tsai, Tsung-Ling; Lin, Chun-An; Wei, Kung-Hwa; Tseng, Tseung-Yuen |
| 國立交通大學 |
2015-12-02T02:59:18Z |
Enhanced switching uniformity in AZO/ZnO1-x/ITO transparent resistive memory devices by bipolar double forming
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Simanjuntak, Firman Mangasa; Panda, Debashis; Tsai, Tsung-Ling; Lin, Chun-An; Wei, Kung-Hwa; Tseng, Tseung-Yuen |
Showing items 121-145 of 359 (15 Page(s) Totally)
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