|
"tseng tseung yuen"的相关文件
显示项目 126-150 / 359 (共15页)
<< < 1 2 3 4 5 6 7 8 9 10 > >>
每页显示[10|25|50]项目
| 國立交通大學 |
2017-04-21T06:48:19Z |
Diamond-shaped Ge and Ge0.9Si0.1 Gate-All-Around Nanowire FETs with Four {111} Facets by Dry Etch Technology
|
Lee, Yao-Jen; Hou, Fu-Ju; Chuang, Shang-Shiun; Hsueh, Fu-Kuo; Kao, Kuo-Hsing; Sung, Po-Jung; Yuan, Wei-You; Yao, Jay-Yi; Lu, Yu-Chi; Lin, Kun-Lin; Wu, Chien-Ting; Chen, Hisu-Chih; Chen, Bo-Yuan; Huang, Guo-Wei; Chen, Henry J. H.; Li, Jiun-Yun; Li, Yiming; Samukawa, Seiji; Chao, Tien-Sheng; Tseng, Tseung-Yuen; Wu, Wen-Fa; Hou, Tuo-Hung; Yeh, Wen-Kuan |
| 臺大學術典藏 |
2017 |
Preface
|
Tuan, Wei-Hsing; Chou, Chen-Chia; Tseng, Tseung-Yuen; Wang, Sea-Fue; Tseng, Wen-Jea; Shieh, Jay; Huang, Chi-Yuen; Chen, Jhewn-Kuang; TZONG-LIN JAY SHIEH |
| 國立成功大學 |
2016-12 |
Effects of fabrication method on defects induced by nitrogen diffusion to the hafnium oxide layer in metal-oxide-semiconductor field effect transistors
|
Lu, Ying-Hsin; Chang, Ting-Chang; Ho, Szu-Han; Chen, Ching-En; Tsai, Jyun-Yu; Liu, Kuan-Ju; Liu, Xi-Wen; Lin, Chien-yu; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Yen, Wei-Ting |
| 國立成功大學 |
2016-04-25 |
Trap state passivation improved hot-carrier instability by zirconium-doping in hafnium oxide in a nanoscale n-metal-oxide semiconductor-field effect transistors with high-k/metal gate
|
Liu, Hsi-Wen; Chang, Ting-Chang; Tsai, Jyun-Yu; Chen, Ching-En; Liu, Kuan-Ju; Lu, Ying-Hsin; Lin, Chien-Yu; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Ye, Yi-Han |
| 國立成功大學 |
2016-04 |
Analysis of Oxide Trap Characteristics by Random Telegraph Signals in nMOSFETs With HfO2-Based Gate Dielectrics
|
Chen, Ching-En; Chang, Ting-Chang; You, Bo; Tsai, Jyun-Yu; Lo, Wen-Hung; Ho, Szu-Han; Liu, Kuan-Ju; Lu, Ying-Hsin; Liu, Xi-Wen; Hung, Yu-Ju; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Lu, Ching-Sen |
| 國立交通大學 |
2016-03-29T00:01:12Z |
Li2MnSiO4與奈米碳管及石墨烯複合材料於非對稱性超級電容之研究
|
曾俊元; TSENG TSEUNG-YUEN |
| 國立交通大學 |
2016-03-29T00:01:09Z |
前瞻高能量超高電容器整合製程及其應用平台開發(III)
|
曾俊元; TSENG TSEUNG-YUEN |
| 國立交通大學 |
2016-03-28T08:17:41Z |
前瞻高能量超高電容器整合製程及其應用平台開發( II )
|
曾俊元; TSENG TSEUNG-YUEN |
| 國立交通大學 |
2016-03-28T08:17:36Z |
錳氧化物奈米複合材料與新穎三維碳奈米結構修飾電極製備及其應用於可撓式非對稱型超高電容器系統之研究
|
曾俊元; TSENG TSEUNG-YUEN |
| 國立交通大學 |
2016-03-28T08:17:36Z |
新穎透明電阻式記憶體元件於高密度與低功率消耗的非揮發性記憶體應用
|
曾俊元; TSENG TSEUNG-YUEN |
| 國立交通大學 |
2016-03-28T08:17:17Z |
Li2MnSiO4與奈米碳管及石墨烯複合材料於非對稱性超級電容之研究
|
曾俊元; TSENG TSEUNG-YUEN |
| 國立交通大學 |
2016-03-28T00:04:27Z |
A stochastic simulation method for the assessment of resistive random access memory retention reliability
|
Berco, Dan; Tseng, Tseung-Yuen |
| 國立交通大學 |
2016-03-28T00:04:16Z |
Fabrication of carbon nanotube/cobalt oxide nanocomposites via electrophoretic deposition for supercapacitor electrodes
|
Kumar, Nagesh; Yu, Yun-Cheng; Lu, Yi Hsuan; Tseng, Tseung Yuen |
| 國立交通大學 |
2016-03-28T00:04:10Z |
Metal induced crystallized poly-Si-based conductive bridge resistive switching memory device with one transistor and one resistor architecture
|
Chand, Umesh; Huang, Chun-Yang; Kumar, Dayanand; Tseng, Tseung-Yuen |
| 國立交通大學 |
2015-12-04T07:03:16Z |
HIGH ENERGY DENSITY ASYMMETRIC PSEUDOCAPACITOR AND METHOD OF MAKING THE SAME
|
Tseng Tseung-Yuen; Hung Chung-Jung; Lin Pang |
| 國立交通大學 |
2015-12-02T02:59:37Z |
Mechanism of Nonlinear Switching in HfO2-Based Crossbar RRAM With Inserting Large Bandgap Tunneling Barrier Layer
|
Chand, Umesh; Huang, Kuan-Chang; Huang, Chun-Yang; Tseng, Tseung-Yuen |
| 國立交通大學 |
2015-12-02T02:59:35Z |
Impact of Post-Oxide Deposition Annealing on Resistive Switching in HfO2-Based Oxide RRAM and Conductive-Bridge RAM Devices
|
Tsai, Tsung-Ling; Chang, Hsiang-Yu; Jiang, Fa-Shen; Tseng, Tseung-Yuen |
| 國立交通大學 |
2015-12-02T02:59:33Z |
A Method to Determine the Located Region of Lateral Trap Position by Analysis of Three-Level Random Telegraph Signals in n-MOSFETs
|
Chen, Ching-En; Chang, Ting-Chang; You, Bo; Tsai, Jyun-Yu; Lo, Wen-Hung; Ho, Szu-Han; Liu, Kuan-Ju; Lu, Ying-Hsin; Hung, Yu-Ju; Tseng, Tseung-Yuen; Wu, James; Tsai, Wei-Kung; Chenge, Kuo-Yu; Syu, Yong-En |
| 國立交通大學 |
2015-12-02T02:59:22Z |
Enhancing the memory window of AZO/ZnO/ITO transparent resistive switching devices by modulating the oxygen vacancy concentration of the top electrode
|
Simanjuntak, Firman Mangasa; Panda, Debashis; Tsai, Tsung-Ling; Lin, Chun-An; Wei, Kung-Hwa; Tseng, Tseung-Yuen |
| 國立交通大學 |
2015-12-02T02:59:18Z |
Enhanced switching uniformity in AZO/ZnO1-x/ITO transparent resistive memory devices by bipolar double forming
|
Simanjuntak, Firman Mangasa; Panda, Debashis; Tsai, Tsung-Ling; Lin, Chun-An; Wei, Kung-Hwa; Tseng, Tseung-Yuen |
| 國立交通大學 |
2015-12-02T02:59:14Z |
The Impact of Pre/Post-metal Deposition Annealing on Negative-Bias-Temperature Instability in HfO2 Stack p-Channel Metal-Oxide-Semiconductor Field Effect Transistors
|
Lu, Ying-Hsin; Chang, Ting-Chang; Ho, Szu-Han; Chen, Ching-En; Tsai, Jyun-Yu; Liu, Kuan-Ju; Liu, Xi-Wen; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Lu, Ching-Sen |
| 國立交通大學 |
2015-12-02T02:59:09Z |
Resistive Switching Characteristics of WO3/ZrO2 Structure With Forming-Free, Self-Compliance, and Submicroampere Current Operation
|
Tsai, Tsung-Ling; Lin, Yu-Hsuan; Tseng, Tseung-Yuen |
| 國立交通大學 |
2015-11-26T01:05:50Z |
一維氧化鋅奈米結構之製備及其應用
|
姚奕全; Yao, I-Chuan; 曾俊元; 林鵬; Tseng, Tseung-Yuen; Lin, Pang |
| 國立交通大學 |
2015-11-26T00:57:07Z |
氧化鋅摻雜鈷應用於透明電阻式記憶體之電阻開關特性研究
|
Om Kumar Prasad; Om Prasad; 曾俊元; Tseng , Tseung-Yuen |
| 國立交通大學 |
2015-11-26T00:56:41Z |
奈米碳管/氮摻雜石墨烯複合電極材料於超級電容器之應用
|
蔡孟翰; Tsai, Meng-Han; 曾俊元; Tseng, Tseung-Yuen |
显示项目 126-150 / 359 (共15页)
<< < 1 2 3 4 5 6 7 8 9 10 > >>
每页显示[10|25|50]项目
|
