| 國立交通大學 |
2016-03-28T08:17:17Z |
Li2MnSiO4與奈米碳管及石墨烯複合材料於非對稱性超級電容之研究
|
曾俊元; TSENG TSEUNG-YUEN |
| 國立交通大學 |
2016-03-28T00:04:27Z |
A stochastic simulation method for the assessment of resistive random access memory retention reliability
|
Berco, Dan; Tseng, Tseung-Yuen |
| 國立交通大學 |
2016-03-28T00:04:16Z |
Fabrication of carbon nanotube/cobalt oxide nanocomposites via electrophoretic deposition for supercapacitor electrodes
|
Kumar, Nagesh; Yu, Yun-Cheng; Lu, Yi Hsuan; Tseng, Tseung Yuen |
| 國立交通大學 |
2016-03-28T00:04:10Z |
Metal induced crystallized poly-Si-based conductive bridge resistive switching memory device with one transistor and one resistor architecture
|
Chand, Umesh; Huang, Chun-Yang; Kumar, Dayanand; Tseng, Tseung-Yuen |
| 國立交通大學 |
2015-12-04T07:03:16Z |
HIGH ENERGY DENSITY ASYMMETRIC PSEUDOCAPACITOR AND METHOD OF MAKING THE SAME
|
Tseng Tseung-Yuen; Hung Chung-Jung; Lin Pang |
| 國立交通大學 |
2015-12-02T02:59:37Z |
Mechanism of Nonlinear Switching in HfO2-Based Crossbar RRAM With Inserting Large Bandgap Tunneling Barrier Layer
|
Chand, Umesh; Huang, Kuan-Chang; Huang, Chun-Yang; Tseng, Tseung-Yuen |
| 國立交通大學 |
2015-12-02T02:59:35Z |
Impact of Post-Oxide Deposition Annealing on Resistive Switching in HfO2-Based Oxide RRAM and Conductive-Bridge RAM Devices
|
Tsai, Tsung-Ling; Chang, Hsiang-Yu; Jiang, Fa-Shen; Tseng, Tseung-Yuen |
| 國立交通大學 |
2015-12-02T02:59:33Z |
A Method to Determine the Located Region of Lateral Trap Position by Analysis of Three-Level Random Telegraph Signals in n-MOSFETs
|
Chen, Ching-En; Chang, Ting-Chang; You, Bo; Tsai, Jyun-Yu; Lo, Wen-Hung; Ho, Szu-Han; Liu, Kuan-Ju; Lu, Ying-Hsin; Hung, Yu-Ju; Tseng, Tseung-Yuen; Wu, James; Tsai, Wei-Kung; Chenge, Kuo-Yu; Syu, Yong-En |
| 國立交通大學 |
2015-12-02T02:59:22Z |
Enhancing the memory window of AZO/ZnO/ITO transparent resistive switching devices by modulating the oxygen vacancy concentration of the top electrode
|
Simanjuntak, Firman Mangasa; Panda, Debashis; Tsai, Tsung-Ling; Lin, Chun-An; Wei, Kung-Hwa; Tseng, Tseung-Yuen |
| 國立交通大學 |
2015-12-02T02:59:18Z |
Enhanced switching uniformity in AZO/ZnO1-x/ITO transparent resistive memory devices by bipolar double forming
|
Simanjuntak, Firman Mangasa; Panda, Debashis; Tsai, Tsung-Ling; Lin, Chun-An; Wei, Kung-Hwa; Tseng, Tseung-Yuen |
| 國立交通大學 |
2015-12-02T02:59:14Z |
The Impact of Pre/Post-metal Deposition Annealing on Negative-Bias-Temperature Instability in HfO2 Stack p-Channel Metal-Oxide-Semiconductor Field Effect Transistors
|
Lu, Ying-Hsin; Chang, Ting-Chang; Ho, Szu-Han; Chen, Ching-En; Tsai, Jyun-Yu; Liu, Kuan-Ju; Liu, Xi-Wen; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Lu, Ching-Sen |
| 國立交通大學 |
2015-12-02T02:59:09Z |
Resistive Switching Characteristics of WO3/ZrO2 Structure With Forming-Free, Self-Compliance, and Submicroampere Current Operation
|
Tsai, Tsung-Ling; Lin, Yu-Hsuan; Tseng, Tseung-Yuen |
| 國立交通大學 |
2015-11-26T01:05:50Z |
一維氧化鋅奈米結構之製備及其應用
|
姚奕全; Yao, I-Chuan; 曾俊元; 林鵬; Tseng, Tseung-Yuen; Lin, Pang |
| 國立交通大學 |
2015-11-26T00:57:07Z |
氧化鋅摻雜鈷應用於透明電阻式記憶體之電阻開關特性研究
|
Om Kumar Prasad; Om Prasad; 曾俊元; Tseng , Tseung-Yuen |
| 國立交通大學 |
2015-11-26T00:56:41Z |
奈米碳管/氮摻雜石墨烯複合電極材料於超級電容器之應用
|
蔡孟翰; Tsai, Meng-Han; 曾俊元; Tseng, Tseung-Yuen |
| 國立交通大學 |
2015-11-26T00:56:41Z |
氧化鋯金屬橋接電阻式記憶體轉態特性優化之研究
|
江法伸; Jiang, Fa-Shen; 曾俊元; Tseng, Tseung-Yuen |
| 國立交通大學 |
2015-11-26T00:56:41Z |
高介電材料於導電橋式及透明電阻記憶體之轉態特性研究
|
張翔喻; Chang, Hsiang-Yu; 曾俊元; Tseng, Tseung-Yuen |
| 國立交通大學 |
2015-11-26T00:56:41Z |
氮化矽薄膜應用於銅導電橋隨機存取記憶體之特性研究
|
藍順醴; Lan, Shun-Li; 曾俊元; Tseng, Tseung-Yuen |
| 國立交通大學 |
2015-07-21T11:20:52Z |
Electron-electron scattering-induced channel hot electron injection in nanoscale n-channel metal-oxide-semiconductor field-effect-transistors with high-k/metal gate stacks
|
Tsai, Jyun-Yu; Chang, Ting-Chang; Chen, Ching-En; Ho, Szu-Han; Liu, Kuan-Ju; Lu, Ying-Hsin; Liu, Xi-Wen; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Lu, Ching-Sen |
| 國立交通大學 |
2015-07-21T11:20:50Z |
Perovskite Oxides as Resistive Switching Memories: A Review
|
Panda, Debashis; Tseng, Tseung-Yuen |
| 國立交通大學 |
2015-07-21T08:31:27Z |
STABLE RESISTIVE SWITCHING CHARACTERISTICS OF Al2O3 LAYERS INSERTED IN HfPO2 BASED RRAM DEVICES
|
Huang, Chun-Yang; Jieng, Jheng-Hong; Tseng, Tseung-Yuen |
| 國立交通大學 |
2015-07-21T08:31:27Z |
IMPROVEMENT OF RESISTIVE SWITCHING PROPERTIES OF Ti/ZrO2/Pt WITH EMBEDDED GERMANIUM
|
Lin, Chun-An; Panda, Debashis; Tseng, Tseung-Yuen |
| 國立交通大學 |
2015-07-21T08:30:55Z |
Graphene/Carbon Nanotube/MnO2 Nanocomposite Based Asymmetric Pseudocapacitors
|
Hung, Chung Jung; Tseng, Tseung-Yuen |
| 國立交通大學 |
2015-07-21T08:29:39Z |
Suppression of endurance degradation by utilizing oxygen plasma treatment in HfO2 resistive switching memory
|
Chand, Umesh; Huang, Chun-Yang; Jieng, Jheng-Hong; Jang, Wen-Yueh; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立交通大學 |
2015-07-21T08:29:32Z |
Investigation of thermal stability and reliability of HfO2 based resistive random access memory devices with cross-bar structure
|
Chand, Umesh; Huang, Kuan-Chang; Huang, Chun-Yang; Ho, Chia-Hua; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
