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机构 日期 题名 作者
國立交通大學 2015-12-02T02:59:37Z Mechanism of Nonlinear Switching in HfO2-Based Crossbar RRAM With Inserting Large Bandgap Tunneling Barrier Layer Chand, Umesh; Huang, Kuan-Chang; Huang, Chun-Yang; Tseng, Tseung-Yuen
國立交通大學 2015-12-02T02:59:35Z Impact of Post-Oxide Deposition Annealing on Resistive Switching in HfO2-Based Oxide RRAM and Conductive-Bridge RAM Devices Tsai, Tsung-Ling; Chang, Hsiang-Yu; Jiang, Fa-Shen; Tseng, Tseung-Yuen
國立交通大學 2015-12-02T02:59:33Z A Method to Determine the Located Region of Lateral Trap Position by Analysis of Three-Level Random Telegraph Signals in n-MOSFETs Chen, Ching-En; Chang, Ting-Chang; You, Bo; Tsai, Jyun-Yu; Lo, Wen-Hung; Ho, Szu-Han; Liu, Kuan-Ju; Lu, Ying-Hsin; Hung, Yu-Ju; Tseng, Tseung-Yuen; Wu, James; Tsai, Wei-Kung; Chenge, Kuo-Yu; Syu, Yong-En
國立交通大學 2015-12-02T02:59:22Z Enhancing the memory window of AZO/ZnO/ITO transparent resistive switching devices by modulating the oxygen vacancy concentration of the top electrode Simanjuntak, Firman Mangasa; Panda, Debashis; Tsai, Tsung-Ling; Lin, Chun-An; Wei, Kung-Hwa; Tseng, Tseung-Yuen
國立交通大學 2015-12-02T02:59:18Z Enhanced switching uniformity in AZO/ZnO1-x/ITO transparent resistive memory devices by bipolar double forming Simanjuntak, Firman Mangasa; Panda, Debashis; Tsai, Tsung-Ling; Lin, Chun-An; Wei, Kung-Hwa; Tseng, Tseung-Yuen
國立交通大學 2015-12-02T02:59:14Z The Impact of Pre/Post-metal Deposition Annealing on Negative-Bias-Temperature Instability in HfO2 Stack p-Channel Metal-Oxide-Semiconductor Field Effect Transistors Lu, Ying-Hsin; Chang, Ting-Chang; Ho, Szu-Han; Chen, Ching-En; Tsai, Jyun-Yu; Liu, Kuan-Ju; Liu, Xi-Wen; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Lu, Ching-Sen
國立交通大學 2015-12-02T02:59:09Z Resistive Switching Characteristics of WO3/ZrO2 Structure With Forming-Free, Self-Compliance, and Submicroampere Current Operation Tsai, Tsung-Ling; Lin, Yu-Hsuan; Tseng, Tseung-Yuen
國立交通大學 2015-11-26T01:05:50Z 一維氧化鋅奈米結構之製備及其應用 姚奕全; Yao, I-Chuan; 曾俊元; 林鵬; Tseng, Tseung-Yuen; Lin, Pang
國立交通大學 2015-11-26T00:57:07Z 氧化鋅摻雜鈷應用於透明電阻式記憶體之電阻開關特性研究 Om Kumar Prasad; Om Prasad; 曾俊元; Tseng , Tseung-Yuen
國立交通大學 2015-11-26T00:56:41Z 奈米碳管/氮摻雜石墨烯複合電極材料於超級電容器之應用 蔡孟翰; Tsai, Meng-Han; 曾俊元; Tseng, Tseung-Yuen

显示项目 141-150 / 359 (共36页)
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