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Showing items 226-275 of 359 (8 Page(s) Totally)
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| 國立交通大學 |
2014-12-12T01:27:27Z |
非晶態金屬氧化物薄膜電晶體之環境敏感性與可靠度
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鍾宛芳; Chung, Wan-Fang; 曾俊元; 張鼎張; Tseng, Tseung-Yuen; Chang, Ting-Chang |
| 國立交通大學 |
2014-12-12T01:27:10Z |
前瞻電阻式轉態記憶體元件之製作與特性研究
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蔡侑廷; Tsai, Yu-Ting; 曾俊元; 張鼎張; Tseng, Tseung-Yuen; Chang, Ting-Chang |
| 國立交通大學 |
2014-12-12T01:27:02Z |
鈦上電極對濺鍍法製備之鋯酸鍶薄膜其雙極性電阻轉換特性之研究
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葉昱廷; Yeh, Yu-Ting; 曾俊元; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-12T01:27:02Z |
利用熱氧化法製備氧化銅薄膜於電阻式轉態記憶體之研究
|
黃志文; Huang, Chih-Wen; 曾俊元; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-12T01:24:37Z |
二元金屬氧化物應用於電阻式記憶體之界面特性研究
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王聖裕; Wang, Sheng-Yu; 曾俊元; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-12T01:24:37Z |
鋯酸鍶基電阻式記憶元件特性與機制之研究
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林孟漢; Lin, Meng-Han; 曾俊元; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-12T01:23:18Z |
奈米點記憶體元件之製作及其電性特性研究
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胡志瑋; Hu, Chih-Wei; 曾俊元; 張鼎張; Tseng, Tseung-Yuen; Chang, Ting-Chang |
| 國立交通大學 |
2014-12-08T15:48:37Z |
Effects of Vanadium Doping on Resistive Switching Characteristics and Mechanisms of SrZrO(3)-Based Memory Films
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Lin, Meng-Han; Wu, Ming-Chi; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:48:10Z |
Size-dependent field-emission characteristics of ZnO nanowires grown by porous anodic aluminum oxide templates assistance
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Lai, Chun-Hung; Chang, Chia-Wei; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:48:10Z |
Formation of the distributed NiSiGe nanocrystals nonvolatile memory formed by rapidly annealing in N(2) and O(2) ambient
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Hu, Chih-Wei; Chang, Ting-Chang; Tu, Chun-Hao; Chiang, Cheng-Neng; Lin, Chao-Cheng; Chen, Min-Chen; Chang, Chun-Yen; Sze, Simon M.; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:47:38Z |
Hydrogen Gas Sensors Using ZnO-SnO(2) Core-Shell Nanostructure
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Yao, I-Chuan; Lin, Pang; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:44:21Z |
Improved resistive switching properties of Ti/ZrO(2)/Pt memory devices for RRAM application
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Wang, Sheng-Yu; Tsai, Chen-Han; Lee, Dai-Ying; Lin, Chih-Yang; Lin, Chun-Chieh; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:42:04Z |
Effect of thermal treatment on resistive switching characteristics in Pt/Ti/Al(2)O(3)/Pt devices
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Lin, Chih-Yang; Lee, Dai-Ying; Wang, Sheng-Yi; Lin, Chun-Chieh; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:42:03Z |
Reproducible resistive switching behavior in sputtered CeO(2) polycrystalline films
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Lin, Chih-Yang; Lee, Dai-Ying; Wang, Sheng-Yi; Lin, Chun-Chieh; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:38:22Z |
Multilevel resistive switching in Ti/Cu(x)O/Pt memory devices
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Wang, Sheng-Yu; Huang, Chin-Wen; Lee, Dai-Ying; Tseng, Tseung-Yuen; Chang, Ting-Chang |
| 國立交通大學 |
2014-12-08T15:38:18Z |
Controllable oxygen vacancies to enhance resistive switching performance in a ZrO(2)-based RRAM with embedded Mo layer
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Wang, Sheng-Yu; Lee, Dai-Ying; Huang, Tai-Yuen; Wu, Jia-Woei; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:38:10Z |
Electrophoretic Fabrication and Characterizations of Manganese Oxide/Carbon Nanotube Nanocomposite Pseudocapacitors
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Hung, Chung Jung; Hung, Jeng Han; Lin, Pang; Tseng, Tseung Yuen |
| 國立交通大學 |
2014-12-08T15:38:00Z |
Influence of H(2)O Dipole on Subthreshold Swing of Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors
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Chung, Wan-Fang; Chang, Ting-Chang; Li, Hung-Wei; Chen, Chi-Wen; Chen, Yu-Chun; Chen, Shih-Ching; Tseng, Tseung-Yuen; Tai, Ya-Hsiang |
| 國立交通大學 |
2014-12-08T15:38:00Z |
Influence of Nanocrystals on Resistive Switching Characteristic in Binary Metal Oxides Memory Devices
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Tsai, Yu-Ting; Chang, Ting-Chang; Lin, Chao-Cheng; Chen, Shih-Cheng; Chen, Chi-Wen; Sze, Simon M.; Yeh (Hung), Fon-Shan; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:37:50Z |
H(2)O-Assisted O(2) Adsorption in Sol-Gel Derived Amorphous Indium Gallium Zinc Oxide Thin Film Transistors
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Chung, Wan-Fang; Chang, Ting-Chang; Li, Hung-Wei; Chen, Shih-Ching; Chen, Yu-Chun; Tseng, Tseung-Yuen; Tai, Ya-Hsiang |
| 國立交通大學 |
2014-12-08T15:37:33Z |
Dopant Activation in Single-Crystalline Germanium by Low-Temperature Microwave Annealing
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Lee, Yao-Jen; Chuang, Shang-Shiun; Hsueh, Fu-Kuo; Lin, Ho-Ming; Wu, Shich-Chuang; Wu, Ching-Yi; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:36:57Z |
Mechanism of High Temperature Retention Property (up to 200 degrees C) in ZrO2-Based Memory Device With Inserting a ZnO Thin Layer
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Chand, Umesh; Huang, Chun-Yang; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:36:57Z |
Compact Ga-Doped ZnO Nanorod Thin Film for Making High-Performance Transparent Resistive Switching Memory
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Huang, Chun-Yang; Ho, Yen-Ting; Hung, Chung-Jung; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:36:22Z |
On the Origin of Anomalous OffCurrent Under Hot Carrier Stress in p-Channel DDDMOS Transistors With STI Structure
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Chen, Ching-En; Chang, Ting-Chang; Chen, Hua-Mao; You, Bo; Yang, Kai-Hsiang; Ho, Szu-Han; Tsai, Jyun-Yu; Liu, Kuan-Ju; Lu, Ying-Hsin; Hung, Yu-Ju; Tai, Ya-Hsiang; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:36:20Z |
Resistive switching characteristics of Pt/CeOx/TiN memory device
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Ismail, Muhammad; Talib, Ijaz; Huang, Chun-Yang; Hung, Chung-Jung; Tsai, Tsung-Ling; Jieng, Jheng-Hong; Chand, Umesh; Lin, Chun-An; Ahmed, Ejaz; Rana, Anwar Manzoor; Nadeem, Muhammad Younus; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:36:06Z |
Hydrothermal Formation of Tungsten Trioxide Nanowire Networks on Seed-Free Substrates and Their Properties in Electrochromic Device
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Hung, Chung Jung; Huang, Yi Hsuan; Chen, Chih Hao; Lin, Pang; Tseng, Tseung Yuen |
| 國立交通大學 |
2014-12-08T15:35:55Z |
Investigation of abnormal negative threshold voltage shift under positive bias stress in input/output n-channel metal-oxide-semiconductor field-effect transistors with TiN/HfO2 structure using fast I-V measurement
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Ho, Szu-Han; Chang, Ting-Chang; Lu, Ying-Hsin; Chen, Ching-En; Tsai, Jyun-Yu; Liu, Kuan-Ju; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Lu, Ching-Sen |
| 國立交通大學 |
2014-12-08T15:35:47Z |
Electrochromic Properties of Tunsgten Trioxide Nanostructures
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Huang, Yi-Hsuan; Hung, Chung-Jung; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:35:47Z |
High energy density asymmetric pseudocapacitors fabricated by graphene/carbon nanotube/MnO2 plus carbon nanotubes nanocomposites electrode
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Hung, Chung Jung; Lin, Pang; Tseng, Tseung Yuen |
| 國立交通大學 |
2014-12-08T15:35:29Z |
Low-Temperature Microwave Annealing Processes for Future IC Fabrication-A Review
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Lee, Yao-Jen; Cho, Ta-Chun; Chuang, Shang-Shiun; Hsueh, Fu-Kuo; Lu, Yu-Lun; Sung, Po-Jung; Chen, Hsiu-Chih; Current, Michael I.; Tseng, Tseung-Yuen; Chao, Tien-Sheng; Hu, Chenming; Yang, Fu-Liang |
| 國立交通大學 |
2014-12-08T15:35:07Z |
Forming-free bipolar resistive switching in nonstoichiometric ceria films
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Ismail, Muhammad; Huang, Chun-Yang; Panda, Debashis; Hung, Chung-Jung; Tsai, Tsung-Ling; Jieng, Jheng-Hong; Lin, Chun-An; Chand, Umesh; Rana, Anwar Manzoor; Ahmed, Ejaz; Talib, Ijaz; Nadeem, Muhammad Younus; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:34:59Z |
Switching mechanism of double forming process phenomenon in ZrOx/HfOy bilayer resistive switching memory structure with large endurance
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Huang, Chun-Yang; Huang, Chung-Yu; Tsai, Tsung-Ling; Lin, Chun-An; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:33:46Z |
Characterization of environment-dependent hysteresis in indium gallium zinc oxide thin film transistors
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Chen, Yu-Chun; Chang, Ting-Chang; Li, Hung-Wei; Chung, Wan-Fang; Chen, Shih-Cheng; Wu, Chang-Pei; Chen, Yi-Hsien; Tai, Ya-Hsiang; Tseng, Tseung-Yuen; Yeh(Huang), Fon-Shan |
| 國立交通大學 |
2014-12-08T15:33:45Z |
Resistive switching behavior of sol-gel deposited TiO2 thin films under different heating ambience
|
Lai, Chun-Hung; Chen, Chia-Hung; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:33:35Z |
High-k shallow traps observed by charge pumping with varying discharging times
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Ho, Szu-Han; Chang, Ting-Chang; Lu, Ying-Hsin; Wang, Bin-Wei; Lo, Wen-Hung; Chen, Ching-En; Tsai, Jyun-Yu; Chen, Hua-Mao; Liu, Kuan-Ju; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Chen, Tsai-Fu; Cao, Xi-Xin |
| 國立交通大學 |
2014-12-08T15:33:04Z |
Abnormal threshold voltage shift under hot carrier stress in Ti1-xNx/HfO2 p-channel metal-oxide-semiconductor field-effect transistors
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Tsai, Jyun-Yu; Chang, Ting-Chang; Lo, Wen-Hung; Ho, Szu-Han; Chen, Ching-En; Chen, Hua-Mao; Tseng, Tseung-Yuen; Tai, Ya-Hsiang; Cheng, Osbert; Huang, Cheng-Tung |
| 國立交通大學 |
2014-12-08T15:32:51Z |
Electrophoretic fabrication and pseudocapacitive properties of graphene/manganese oxide/carbon nanotube nanocomposites
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Hung, Chung Jung; Lin, Pang; Tseng, Tseung Yuen |
| 國立交通大學 |
2014-12-08T15:32:49Z |
Anomalous Gate Current Hump after Dynamic Negative Bias Stress and Negative-Bias Temperature-Instability in p-MOSFETs with HfxZr1-xO2 and HfO2/Metal Gate Stacks
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Ho, Szu-Han; Chang, Ting-Chang; Wu, Chi-Wei; Lo, Wen-Hung; Chen, Ching-En; Tsai, Jyun-Yu; Chen, Hua-Mao; Liu, Guan-Ru; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Chen, Daniel; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:32:45Z |
Investigation of Random Telegraph Signal with PD SOI MOSFETs
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Chen, Ching-En; Chang, Ting-Chang; Lo, Hung-Ping; Ho, Szu-Han; Lo, Wen-Hung; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng Tung |
| 國立交通大學 |
2014-12-08T15:32:38Z |
Investigation of Lateral Trap Position by Random Telegraph Signal Analysis in Moderate Inversion in n-Channel MOSFETs
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Chen, Ching-En; Chang, Ting-Chang; You, Bo; Lo, Wen-Hung; Ho, Szu-Han; Dai, Chih-Hao; Tsai, Jyun-Yu; Chen, Hua-Mao; Liu, Guan-Ru; Tai, Ya-Hsiang; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:31:42Z |
Improved Resistive Switching Characteristics by Al2O3 Layers Inclusion in HfO2-Based RRAM Devices
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Huang, Chun-Yang; Jieng, Jheng-Hong; Jang, Wen-Yueh; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:31:10Z |
Unipolar resistive switching behavior in Pt/HfO2/TiN device with inserting ZrO2 layer and its 1 diode-1 resistor characteristics
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Lee, Dai-Ying; Tsai, Tsung-Ling; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:30:56Z |
One-dimensional ZnO nanostructures: fabrication, optoelectronic properties, and device applications
|
Panda, Debashis; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:30:43Z |
Unipolar Resistive Switching in ZrO2 Thin Films
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Zhang, Guo-Yong; Lee, Dai-Ying; Yao, I-Chuan; Hung, Chung-Jung; Wang, Sheng-Yu; Huang, Tai-Yuen; Wu, Jia-Woei; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:29:46Z |
Growth, dielectric properties, and memory device applications of ZrO2 thin films
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Panda, Debashis; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:29:13Z |
Investigation of an anomalous hump in gate current after negative-bias temperature-instability in HfO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors
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Ho, Szu-Han; Chang, Ting-Chang; Wu, Chi-Wei; Lo, Wen-Hung; Chen, Ching-En; Tsai, Jyun-Yu; Liu, Guan-Ru; Chen, Hua-Mao; Lu, Ying-Shin; Wang, Bin-Wei; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:29:12Z |
Investigation of extra traps measured by charge pumping technique in high voltage zone in p-channel metal-oxide-semiconductor field-effect transistors with HfO2/metal gate stacks
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Ho, Szu-Han; Chang, Ting-Chang; Wang, Bin-Wei; Lu, Ying-Shin; Lo, Wen-Hung; Chen, Ching-En; Tsai, Jyun-Yu; Chen, Hua-Mao; Liu, Guan-Ru; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Cao, Xi-Xin |
| 國立交通大學 |
2014-12-08T15:29:05Z |
Highly Stable SrZrO3 Bipolar Resistive Switching Memory by Ti Modulation Layer
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Wu, Ming-Chi; Lin, Meng-Han; Yeh, Yu-Ting; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:28:51Z |
Low-Power and Highly Reliable Multilevel Operation in ZrO(2) 1T1R RRAM
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Wu, Ming-Chi; Lin, Yi-Wei; Jang, Wen-Yueh; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:28:51Z |
Analysis of anomalous traps measured by charge pumping technique in HfO2/metal gate n-channel metal-oxide-semiconductor field-effect transistors
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Ho, Szu-Han; Chang, Ting-Chang; Lu, Ying-shin; Lo, Wen-Hung; Chen, Ching-En; Tsai, Jyun-Yu; Chen, Hua-Mao; Wu, Chi-Wei; Luo, Hung-Ping; Liu, Guan-Ru; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Sze, Simon M. |
Showing items 226-275 of 359 (8 Page(s) Totally)
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