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Showing items 266-275 of 359 (36 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:31:42Z |
Improved Resistive Switching Characteristics by Al2O3 Layers Inclusion in HfO2-Based RRAM Devices
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Huang, Chun-Yang; Jieng, Jheng-Hong; Jang, Wen-Yueh; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:31:10Z |
Unipolar resistive switching behavior in Pt/HfO2/TiN device with inserting ZrO2 layer and its 1 diode-1 resistor characteristics
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Lee, Dai-Ying; Tsai, Tsung-Ling; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:30:56Z |
One-dimensional ZnO nanostructures: fabrication, optoelectronic properties, and device applications
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Panda, Debashis; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:30:43Z |
Unipolar Resistive Switching in ZrO2 Thin Films
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Zhang, Guo-Yong; Lee, Dai-Ying; Yao, I-Chuan; Hung, Chung-Jung; Wang, Sheng-Yu; Huang, Tai-Yuen; Wu, Jia-Woei; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:29:46Z |
Growth, dielectric properties, and memory device applications of ZrO2 thin films
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Panda, Debashis; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:29:13Z |
Investigation of an anomalous hump in gate current after negative-bias temperature-instability in HfO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors
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Ho, Szu-Han; Chang, Ting-Chang; Wu, Chi-Wei; Lo, Wen-Hung; Chen, Ching-En; Tsai, Jyun-Yu; Liu, Guan-Ru; Chen, Hua-Mao; Lu, Ying-Shin; Wang, Bin-Wei; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:29:12Z |
Investigation of extra traps measured by charge pumping technique in high voltage zone in p-channel metal-oxide-semiconductor field-effect transistors with HfO2/metal gate stacks
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Ho, Szu-Han; Chang, Ting-Chang; Wang, Bin-Wei; Lu, Ying-Shin; Lo, Wen-Hung; Chen, Ching-En; Tsai, Jyun-Yu; Chen, Hua-Mao; Liu, Guan-Ru; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Cao, Xi-Xin |
| 國立交通大學 |
2014-12-08T15:29:05Z |
Highly Stable SrZrO3 Bipolar Resistive Switching Memory by Ti Modulation Layer
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Wu, Ming-Chi; Lin, Meng-Han; Yeh, Yu-Ting; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:28:51Z |
Low-Power and Highly Reliable Multilevel Operation in ZrO(2) 1T1R RRAM
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Wu, Ming-Chi; Lin, Yi-Wei; Jang, Wen-Yueh; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:28:51Z |
Analysis of anomalous traps measured by charge pumping technique in HfO2/metal gate n-channel metal-oxide-semiconductor field-effect transistors
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Ho, Szu-Han; Chang, Ting-Chang; Lu, Ying-shin; Lo, Wen-Hung; Chen, Ching-En; Tsai, Jyun-Yu; Chen, Hua-Mao; Wu, Chi-Wei; Luo, Hung-Ping; Liu, Guan-Ru; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Sze, Simon M. |
Showing items 266-275 of 359 (36 Page(s) Totally)
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