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"tseng tseung yuen"的相关文件
显示项目 276-285 / 359 (共36页)
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| 國立交通大學 |
2014-12-08T15:28:09Z |
Effects of Post-Deposition Annealing Atmosphere and Duration on Sol-Gel Derived Amorphous Indium-Zinc-Oxide Thin Film Transistors
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Chung, Wan-Fang; Chang, Ting-Chang; Li, Hung-Wei; Tseng, Tseung-Yuen; Tai, Ya-Hsiang |
| 國立交通大學 |
2014-12-08T15:28:09Z |
The Impact of Active Layer Pre-Treatment on Bias Stress Stability of Sol-gel Derived Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistor
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Chung, Wan-Fang; Chang, Ting-Chang; Li, Hung-Wei; Chen, Yu-Chun; Li, Iue-Hen; Tseng, Tseung-Yuen; Tai, Ya-Hsiang |
| 國立交通大學 |
2014-12-08T15:27:50Z |
Investigation for coexistence of dual resistive switching characteristics in DyMn(2)O(5) memory devices
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Tsai, Yu-Ting; Chang, Ting-Chang; Huang, Wei-Li; Huang, Chih-Wen; Syu, Yong-En; Chen, Shih-Cheng; Sze, Simon M.; Tsai, Ming-Jinn; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:27:20Z |
Nitric Acid Oxidized ZrO(2) as the Tunneling Oxide of Cobalt Silicide Nanocrystal Memory Devices
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Hu, Chih-Wei; Chang, Ting-Chang; Tu, Chun-Hao; Chen, Yang-Dong; Lin, Chao-Cheng; Chen, Min-Chen; Lin, Jian-Yang; Sze, Simon M.; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:24:34Z |
ZnO Nanostructures for Sensor Applications
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Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:24:05Z |
Analysis of an anomalous hump in gate current after dynamic negative bias stress in HfxZr1-xO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors
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Ho, Szu-Han; Chang, Ting-Chang; Wu, Chi-Wei; Lo, Wen-Hung; Chen, Ching-En; Tsai, Jyun-Yu; Luo, Hung-Ping; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:23:56Z |
"Field Emission Properties and Reliability of ZnO Nanorod, Nanopagoda, and Nanotip Current Emitters"
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Yao, I. -Chuan; Lin, Pang; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:23:55Z |
Electrical Properties and Reliability of ZnO-Based Nanorod Current Emitters
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Yao, I-Chuan; Lin, Pang; Huang, Sheng-He; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:23:40Z |
A study on low-power, nanosecond operation and multilevel bipolar resistance switching in Ti/ZrO2/Pt nonvolatile memory with 1T1R architecture
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Wu, Ming-Chi; Jang, Wen-Yueh; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:23:36Z |
Unipolar Resistive Switching Characteristics of a ZrO2 Memory Device With Oxygen Ion Conductor Buffer Layer
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Lee, Dai-Ying; Tseng, Tseung-Yuen |
显示项目 276-285 / 359 (共36页)
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