| 國立交通大學 |
2014-12-08T15:24:05Z |
Analysis of an anomalous hump in gate current after dynamic negative bias stress in HfxZr1-xO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors
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Ho, Szu-Han; Chang, Ting-Chang; Wu, Chi-Wei; Lo, Wen-Hung; Chen, Ching-En; Tsai, Jyun-Yu; Luo, Hung-Ping; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:23:56Z |
"Field Emission Properties and Reliability of ZnO Nanorod, Nanopagoda, and Nanotip Current Emitters"
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Yao, I. -Chuan; Lin, Pang; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:23:55Z |
Electrical Properties and Reliability of ZnO-Based Nanorod Current Emitters
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Yao, I-Chuan; Lin, Pang; Huang, Sheng-He; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:23:40Z |
A study on low-power, nanosecond operation and multilevel bipolar resistance switching in Ti/ZrO2/Pt nonvolatile memory with 1T1R architecture
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Wu, Ming-Chi; Jang, Wen-Yueh; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:23:36Z |
Unipolar Resistive Switching Characteristics of a ZrO2 Memory Device With Oxygen Ion Conductor Buffer Layer
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Lee, Dai-Ying; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:23:05Z |
Effect of Top Electrode Material on Resistive Switching Characteristics in MnO2 Nonvolatile Memory Devices
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Tsai, Yu-Ting; Chang, Ting-Chang; Lin, Chao-Cheng; Chiang, Lan-Shin; Chen, Shih-Cheng; Sze, Simon M.; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:22:53Z |
Bottom Electrode Modification of ZrO2 Resistive Switching Memory Device with Au Nanodots
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Lee, Dai-Ying; Yao, I-Chuan; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:22:51Z |
Resistive switching characteristics of nickel silicide layer embedded HfO2 film
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Panda, Debashis; Huang, Chun-Yang; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:22:41Z |
ZnO nanorods grown on polymer substrates as UV photodetectors
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Yao, I-Chuan; Tseng, Tseung-Yuen; Lin, Pang |
| 國立交通大學 |
2014-12-08T15:22:32Z |
Characteristics of SrTiO(3) Insulated Layer in SBT Ferroelectric Thin Films
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Chou, Hsiu-Yu; Lee, En-Ko; Lin, Meng-Han; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:22:15Z |
Fabrication and resistive switching characteristics of high compact Ga-doped ZnO nanorod thin film devices
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Yao, I-Chuan; Lee, Dai-Ying; Tseng, Tseung-Yuen; Lin, Pang |
| 國立交通大學 |
2014-12-08T15:21:35Z |
Surface states related the bias stability of amorphous In-Ga-Zn-O thin film transistors under different ambient gasses
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Chen, Yu-Chun; Chang, Ting-Chang; Li, Hung-Wei; Chen, Shih-Cheng; Chung, Wan-Fang; Chen, Yi-Hsien; Tai, Ya-Hsiang; Tseng, Tseung-Yuen; Yeh (Huang), Fon-Shan |
| 國立交通大學 |
2014-12-08T15:21:34Z |
Robust unipolar resistive switching of Co nano-dots embedded ZrO(2) thin film memories and their switching mechanism
|
Wu, Ming-Chi; Wu, Tsung-Han; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:21:32Z |
Oxygen-Adsorption-Induced Anomalous Capacitance Degradation in Amorphous Indium-Gallium-Zinc-Oxide Thin-Film-Transistors under Hot-Carrier Stress
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Chung, Wan-Fang; Chang, Ting-Chang; Lin, Chia-Sheng; Tu, Kuan-Jen; Li, Hung-Wei; Tseng, Tseung-Yuen; Chen, Ying-Chung; Tai, Ya-Hsiang |
| 國立交通大學 |
2014-12-08T15:21:12Z |
Forming-free resistive switching behaviors in Cr-embedded Ga(2)O(3) thin film memories
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Lee, Dai-Ying; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:18:12Z |
Nonpolar Bistable Resistive Switching Behaviors of Bismuth Titanate Oxide Thin Film
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Lin, Meng-Han; Wu, Ming-Chi; Lin, Chun-Chieh; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:15:52Z |
Resistive switching mechanisms of V-doped SrZrO3 memory films
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Lin, Chun-Chieh; Tu, Bing-Chung; Lin, Chao-Cheng; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:14:18Z |
Resistance switching properties of sol-gel derived SrZrO3 based memory thin films
|
Liu, Chih-Yi; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:14:10Z |
Effect of top electrode material on resistive switching properties of ZrO2 film memory devices
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Lin, Chih-Yang; Wu, Chen-Yu; Wu, Chung-Yi; Lee, Tzyh-Cheang; Yang, Fu-Liang; Hu, Chenming; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:13:38Z |
SrTiO3-SiO2 oxide films for possible high-k gate dielectric applications
|
Lin, Chun-Chieh; Lai, Li-Wen; Lin, Chih-Yang; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:13:21Z |
Well-aligned ternary Cd1-xZnxS nanowire Arrays and their composition-dependent field emission properties
|
Lin, Yi-Feng; Hsu, Yung-Jung; Lu, Shih-Yuan; Chen, Kuan-Tsung; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:13:12Z |
Modified resistive switching behavior of ZrO2 memory films based on the interface layer formed by using Ti top electrode
|
Lin, Chih-Yang; Wu, Chung-Yi; Wu, Chen-Yu; Tseng, Tseung-Yuen; Hu, Chenming |
| 國立交通大學 |
2014-12-08T15:13:00Z |
Voltage-polarity-independent and high-speed resistive switching properties of v-doped SrZrO3 thin films
|
Lin, Chun-Chieh; Lin, Chih-Yang; Lin, Meng-Han; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:12:52Z |
Formation of Mo silicide nanodot memory by rapid thermal annealing dual electron-gun evaporated Mo-Si layer
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Lin, Chao-Cheng; Chang, Ting-Chang; Tu, Chun-Hao; Chen, Wei-Ren; Hu, Chih-Wei; Sze, Simon M.; Chang, Chun-Yen; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:12:50Z |
Electrical properties and fatigue behaviors of ZrO(2) resistive switching thin films
|
Lin, Chih-Yang; Wang, Sheng-Yi; Lee, Dai-Ying; Tseng, Tseung-Yuen |
