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Taiwan Academic Institutional Repository >
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"tseng tseung yuen"
Showing items 301-350 of 359 (8 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:13:21Z |
Well-aligned ternary Cd1-xZnxS nanowire Arrays and their composition-dependent field emission properties
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Lin, Yi-Feng; Hsu, Yung-Jung; Lu, Shih-Yuan; Chen, Kuan-Tsung; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:13:12Z |
Modified resistive switching behavior of ZrO2 memory films based on the interface layer formed by using Ti top electrode
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Lin, Chih-Yang; Wu, Chung-Yi; Wu, Chen-Yu; Tseng, Tseung-Yuen; Hu, Chenming |
| 國立交通大學 |
2014-12-08T15:13:00Z |
Voltage-polarity-independent and high-speed resistive switching properties of v-doped SrZrO3 thin films
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Lin, Chun-Chieh; Lin, Chih-Yang; Lin, Meng-Han; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:12:52Z |
Formation of Mo silicide nanodot memory by rapid thermal annealing dual electron-gun evaporated Mo-Si layer
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Lin, Chao-Cheng; Chang, Ting-Chang; Tu, Chun-Hao; Chen, Wei-Ren; Hu, Chih-Wei; Sze, Simon M.; Chang, Chun-Yen; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:12:50Z |
Electrical properties and fatigue behaviors of ZrO(2) resistive switching thin films
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Lin, Chih-Yang; Wang, Sheng-Yi; Lee, Dai-Ying; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:12:09Z |
Formation of Core/Shell-Type ZnO/CeO(2) Nanorods and CeO(2) Nanotube Arrays by Aqueous Synthesis and Wet-Etching
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Chen, Yung Sheng; Tseng, Tseung Yuen |
| 國立交通大學 |
2014-12-08T15:11:49Z |
High Device Yield of Resistive Switching Characteristics in Oxygen-Annealed SrZrO(3) Memory Devices
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Lin, Meng-Han; Wu, Ming-Chi; Huang, Yi-Han; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:11:44Z |
Environment-dependent thermal instability of sol-gel derived amorphous indium-gallium-zinc-oxide thin film transistors
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Chung, Wan-Fang; Chang, Ting-Chang; Li, Hung-Wei; Chen, Shih-Ching; Chen, Yu-Chun; Tseng, Tseung-Yuen; Tai, Ya-Hsiang |
| 國立交通大學 |
2014-12-08T15:11:07Z |
Preparation and properties of perovskite thin films for resistive nonvolatile memory applications
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Lai, Chun-Hung; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:10:51Z |
Improvement of resistive switching characteristics in SrZrO3 thin films with embedded Cr layer
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Lin, Chih-Yang; Lin, Meng-Han; Wu, Ming-Chi; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:10:32Z |
Charge storage characteristics of Mo nanocrystal dependence on Mo oxide reduction
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Lin, Chao-Cheng; Chang, Ting-; Tu, Chun-Hao; Chen, Wei-Ren; Hu, Chih-Wei; Sze, Simon M.; Tseng, Tseung-Yuen; Chen, Sheng-Chi; Lin, Jian-Yang |
| 國立交通大學 |
2014-12-08T15:10:28Z |
Improvement of Charge-Storage Characteristics of Mo Nanocrystal Memory by Double-Layer Structure
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Lin, Chao-Cheng; Chang, Ting-Chang; Tu, Chun-Hao; Chen, Wei-Ren; Feng, Li-Wen; Sze, Simon M.; Tseng, Tseung-Yuen; Chen, Sheng-Chi; Lin, Jian-Yang |
| 國立交通大學 |
2014-12-08T15:10:28Z |
Enhancement of NiSi-Based Nanocrystal Formation by Incorporating Ge Elements for Nonvolatile Memory Devices
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Hu, Chih-Wei; Chang, Ting-Chang; Tu, Chun-Hao; Chiang, Cheng-Neng; Lin, Chao-Cheng; Lee, Sheng-Wei; Chang, Chun-Yen; Sze, Simon M.; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:10:19Z |
Charge Storage Characteristics of Mo Nanocrystal Memory Influenced by Ammonia Plasma Treatment
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Lin, Chao-Cheng; Chang, Ting-Chang; Tu, Chun-Hao; Chen, Wei-Ren; Hu, Chih-Wei; Sze, Simon M.; Tseng, Tseung-Yuen; Chen, Sheng-Chi; Lin, Jian-Yang |
| 國立交通大學 |
2014-12-08T15:10:01Z |
NiSiGe nanocrystals for nonvolatile memory devices
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Hu, Chih-Wei; Chang, Ting-; Tu, Chun-Hao; Chiang, Cheng-Neng; Lin, Chao-Cheng; Sze, Simon M.; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:10:01Z |
Improved reliability of Mo nanocrystal memory with ammonia plasma treatment
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Lin, Chao-Cheng; Chang, Ting-Chang; Tu, Chun-Hao; Chen, Wei-Ren; Hu, Chih-Wei; Sze, Simon M.; Tseng, Tseung-Yuen; Chen, Sheng-Chi; Lin, Jian-Yang |
| 國立交通大學 |
2014-12-08T15:09:54Z |
Electrical and optical properties of ZnO:Al thin films grown by magnetron sputtering
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Bai, Shr-Nan; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:09:47Z |
Cobalt nanodots formed by annealing the CoSiO layer for the application of the nonvolatile memory
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Hu, Chih-Wei; Chang, Ting-Chang; Tu, Chun-Hao; Shueh, Pei-Kun; Lin, Chao-Cheng; Sze, Simon M.; Tseng, Tseung-Yuen; Chen, Min-Chen |
| 國立交通大學 |
2014-12-08T15:09:45Z |
Nanotip fabrication of zinc oxide nanorods and their enhanced field emission properties
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Yao, I-Chuan; Lin, Pang; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:09:14Z |
The structural and optical properties of ZnO nanowire arrays prepared by hydrothermal synthesis method
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Bai, Shr-Nan; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:08:44Z |
Effects of Ti top electrode thickness on the resistive switching behaviors of rf-sputtered ZrO(2) memory films
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Wang, Sheng-Yu; Lee, Dai-Ying; Tseng, Tseung-Yuen; Lin, Chih-Yang |
| 國立交通大學 |
2014-12-08T15:08:02Z |
Nitric Acid Oxidation of Si for the Tunneling Oxide Application on CoSi(2) Nanocrystals Nonvolatile Memory
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Hu, Chih-Wei; Chang, Ting-Chang; Tu, Chun-Hao; Chen, Yang-Dong; Lin, Chao-Cheng; Chen, Min-Chen; Lin, Jian-Yang; Sze, Simon M.; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:07:53Z |
High Density Ni Nanocrystals Formed by Coevaporating Ni and SiO(2) Pellets for the Nonvolatile Memory Device Application
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Hu, Chih-Wei; Chang, Ting-Chang; Tu, Chun-Hao; Huang, Yu-Hao; Lin, Chao-Cheng; Chen, Min-Chen; Huang, Fon-Shan; Sze, Simon M.; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:07:50Z |
Ti-Induced Recovery Phenomenon of Resistive Switching in ZrO(2) Thin Films
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Lee, Dai-Ying; Wang, Sheng-Yu; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:07:23Z |
Charge storage characteristics of high density Mo nanocrystal embedded in silicon oxide and silicon nitride
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Lin, Chao-Cheng; Chang, Ting-Chang; Tu, Chun-Hao; Chen, Shih-Ching; Hu, Chih-Wei; Sze, Simon M.; Tseng, Tseung-Yuen; Chen, Sheng-Chi; Lin, Jian-Yang |
| 國立交通大學 |
2014-12-08T15:06:46Z |
Second Phase and Defect Formation in Bi(0.5)Na(0.5-x)K(x)TiO(3) Ceramics
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Chen, Pin-Yi; Chou, Chen-Chia; Tseng, Tseung-Yuen; Chen, Haydn |
| 國立交通大學 |
2014-12-08T15:06:46Z |
Correlation of Microstructures and Conductivities of Ferroelectric Ceramics Using Complex Impedance Spectroscopy
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Chen, Pin-Yi; Chou, Chen-Chia; Tseng, Tseung-Yuen; Chen, Haydn |
| 國立交通大學 |
2014-12-08T15:06:41Z |
Bias-induced oxygen adsorption in zinc tin oxide thin film transistors under dynamic stress
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Chen, Yu-Chun; Chang, Ting-Chang; Li, Hung-Wei; Chen, Shih-Ching; Lu, Jin; Chung, Wan-Fang; Tai, Ya-Hsiang; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:06:33Z |
High-speed and localized resistive switching characteristics of double-layer SrZrO(3) memory devices
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Lin, Meng-Han; Wu, Ming-Chi; Huang, Chun-Yang; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:06:16Z |
Resistive switching properties of SrZrO(3)-based memory films
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Lin, Chun-Chieh; Lin, Chao-Cheng; Tu, Bing-Chung; Yu, Jung-Sheng; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:05:14Z |
Memory effect of RF sputtered ZrO2 thin films
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Lin, Chih-Yang; Wu, Chung-Yi; Wu, Chen-Yu; Lin, Chun-Chieh; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:05:13Z |
Stable resistive switching behaviors of sputter deposited V-doped SrZrO3 thin films
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Lin, Chun-Chieh; Yu, Jung-Sheng; Lin, Chih-Yang; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:05:08Z |
Resistive switching properties of sol-gel derived Mo-doped SrZrO3 thin films
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Lin, Chih-Yang; Lin, Chun-Chieh; Huang, Chun-Hsing; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立成功大學 |
2014-10-06 |
Electron-electron scattering-induced channel hot electron injection in nanoscale n-channel metal-oxide-semiconductor field-effect-transistors with high-k/metal gate stacks
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Tsai, Jyun-Yu; Chang, Ting-Chang; Chen, Ching-En; Ho, Szu-Han; Liu, Kuan-Ju; Lu, Ying-Hsin; Liu, Xi-Wen; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Lu, Ching-Sen |
| 國立成功大學 |
2014-06 |
On the Origin of Anomalous OffCurrent Under Hot Carrier Stress in p-Channel DDDMOS Transistors With STI Structure
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Chen, Ching-En; Chang, Ting-Chang; Chen, Hua-Mao; You, Bo; Yang, Kai-Hsiang; Ho, Szu-Han; Tsai, Jyun-Yu; Liu, Kuan-Ju; Lu, Ying-Hsin; Hung, Yu-Ju; Tai, Ya-Hsiang; Tseng, Tseung-Yuen |
| 國立成功大學 |
2013-11-07 |
High-k shallow traps observed by charge pumping with varying discharging times
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Ho, Szu-Han;Chang, Ting-Chang;Lu, Ying-Hsin;Wang, Bin-Wei;Lo, Wen-Hung;Chen, Ching-En;Tsai, Jyun-Yu;Chen, Hua-Mao;Liu, Kuan-Ju;Tseng, Tseung-Yuen;Cheng, Osbert;Huang, Cheng-Tung;Chen, Tsai-Fu;Cao, Xi-Xin |
| 國立成功大學 |
2013-09-28 |
Abnormal threshold voltage shift under hot carrier stress in Ti1-xNx/HfO2 p-channel metal-oxide-semiconductor field-effect transistors
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Tsai, Jyun-Yu;Chang, Ting-Chang;Lo, Wen-Hung;Ho, Szu-Han;Chen, Ching-En;Chen, Hua-Mao;Tseng, Tseung-Yuen;Tai, Ya-Hsiang;Cheng, Osbert;Huang, Cheng-Tung |
| 國立成功大學 |
2013 |
Anomalous Gate Current Hump after Dynamic Negative Bias Stress and Negative-Bias Temperature-Instability in p-MOSFETs with HfxZr1-xO2 and HfO2/Metal Gate Stacks
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Ho, Szu-Han; Chang, Ting-Chang; Wu, Chi-Wei; Lo, Wen-Hung; Chen, Ching-En; Tsai, Jyun-Yu; Chen, Hua-Mao; Liu, Guan-Ru; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Chen, Daniel; Sze, Simon M. |
| 國立成功大學 |
2013 |
Investigation of Lateral Trap Position by Random Telegraph Signal Analysis in Moderate Inversion in n-Channel MOSFETs
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Chen, Ching-En; Chang, Ting-Chang; You, Bo; Lo, Wen-Hung; Ho, Szu-Han; Dai, Chih-Hao; Tsai, Jyun-Yu; Chen, Hua-Mao; Liu, Guan-Ru; Tai, Ya-Hsiang; Tseng, Tseung-Yuen |
| 國立東華大學 |
2009-11 |
Resistive switching characteristics of Ti/CuO/Pt memory devices
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林群傑; Lin, Chun-Chieh; Wang, Sheng-Yu ; Huang, Chih-Wen ; Lee, Dai-Ying; Lin, Chih-Yang ;Tseng, Tseung-Yuen |
| 國立東華大學 |
2009 |
Nonpolar bistable resistive switchng behaviors of bismuth titanate oxide thin film
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林群傑; Lin, Chun-Chieh; Lin, Meng-Han ; Wu, Ming-Chi ;Tseng, Tseung-Yuen |
| 國立成功大學 |
2009 |
Conduction Behavior of V-SrZrO3 Thin Film Showing Resistive Switching
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Lai, Chun-Hung; Liu, Chih-Yi; Tseng, Tseung-Yuen |
| 國立東華大學 |
2008-12 |
Reproducible resistive switching behavior in sputtered CeO2 polycrystalline films
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林群傑; Lin, Chun-Chieh; Lin, Chih-Yang ; Lee, Dai-Ying; Wang, Sheng-Yi ; Tseng, Tseung-Yuen |
| 國立東華大學 |
2008-12 |
Effect of thermal treatment on resistive switching characteristics in Pt/Ti/Al2O3/Pt devices
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林群傑; Lin, Chun-Chieh; Lin, Chih-Yang ; Lee, Dai-Ying; Wang, Sheng-Yi ; Tseng, Tseung-Yuen |
| 國立東華大學 |
2008-12 |
Current status of resistive nonvolatile memories
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林群傑; Lin, Chun-Chieh; Lin, Chih-Yang ;Liu, Chih-Yi ; Tseng, Tseung-Yuen |
| 國立東華大學 |
2007-12 |
Resistive switching properties of sol-gel derived Mo-doped SrZrO3 thin films
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林群傑; Lin, Chun-Chieh; Lin, Chih-Yang ; Huang, Chun-Hsing; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立東華大學 |
2007-12 |
Stable resistive switching behaviors of sputter deposited V-doped SrZrO3 thin films
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林群傑; Lin, Chun-Chieh; Yu Jung-Sheng ;Lin Chih-Yang ; Lin Chen-Hsi ; Tseng, Tseung-Yuen |
| 國立東華大學 |
2007-12 |
Memory effect of RF sputtered ZrO2 thin films
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林群傑; Lin, Chun-Chieh; Lin, Chih-Yang ;Wu, Chung-Yi ;Wu, Chen-Yu ;Tseng, Tseung-Yuen |
| 國立東華大學 |
2007-12 |
Voltage-polarity-independent and high-speed resistive switching properties of V-doped SrZrO3 thin films
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林群傑; Lin, Chun-Chieh; Lin, Chih-Yang ; Lin, Meng-Han; Lin,Chen-Hsi ;Tseng, Tseung-Yuen |
| 國立東華大學 |
2007-11 |
Bipolar resistive switching characteristics in SrZrO3-based films for RRAM applications
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林群傑; Lin, Chun-Chieh; Lin, Chih-Yang ; Tseng, Tseung-Yuen |
Showing items 301-350 of 359 (8 Page(s) Totally)
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